honeywell memory sram
Abstract: 419B3E
Text: b3E D 4551072 DGQ1D3M 417 • H 0 N 3 Honeywell RICMOS SEA OF TRANSISTORS GATE ARRAY HR2210 FEATURES OTHER RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Si02 • Dose Rate Upset Hardness > 1x10° rad(Si)/sec • Dose Rate Survivability > 1x1012rad(Si)/sec
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HR2210
1x106
1x1012rad
1x101
honeywell memory sram
419B3E
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Untitled
Abstract: No abstract text available
Text: Honeyw ell HC6664 Military Products Preliminary 8K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 jim Process • Typical 30 ns Access Time • Total Dose Hardness through 1x10 rad Si02 • Low Operating Power
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1x10u
1x109
1x101
1x108
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Untitled
Abstract: No abstract text available
Text: b3E J> m 45S 1 Ö 7S GATE ARRAYS QDD1Q2G ^ 5 5 • H 0 N 3 Honeywell HONE YÜ1ELL/S S E C RICMOS SEA OF TRANSISTORS GATE ARRAY HR1060 FEATURES RADIATION HARDNESS OTHER • Total Dose Hardness of >1x106 rad Si02 • Wafers from DESC certified QML 1.2 ¡im process
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HR1060
1x106
1x109rad
1x1012rad
1x109upsets/bit-day
1x1014cnrr2
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HR2340
Abstract: sram pull down honeywell memory sram
Text: b3E D • MSS1Ö7E 0DD1D3L, EIT ■ H 0 N 3 H O ilG y W G lI HONEYÙJELL/S S E C Preliminary RICMOS SEA OF TRANSISTORS GATE ARRAY HR2340 FEATURES RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Sl02 • Dose Rate Upset Hardness > 1x103rad(Si)/sec
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1x106
1x103rad
1x1012rad
HR2340
HR2340
sram pull down
honeywell memory sram
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Untitled
Abstract: No abstract text available
Text: • ft fit * y w n Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC685 : FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 pm Process • Total Dose Hardness through 1x106 rad S i0 2 • Listed on SM D #5962-921 3 Available as
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1x106
1x1014cm
HC685
IL-l-38535
1x109
1x101
36-Lead
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Untitled
Abstract: No abstract text available
Text: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6228 FEATURES OTHER RADIATION • Fabricated with RICMOS IV-E Silicon on Insulator SOI 0.7 |xm Process • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)
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HX6228
1x106
1x1014cm
1x109rad
1x101
32-Lead
1x106rad
2x105
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pepi cr
Abstract: No abstract text available
Text: 55E D • MS51fl?2 OOGOflOa 277 ■ H0N3 Honeywell HONEYWELL/S S E C Military Products «"p q , -23 - o S 64K x 1 RADIATION-HARDENED STATIC RAM HC6464 FEATURES RADIATION OTHER • Fabricated using DESC approved QML 1.2|xm RICMOS process • Access Time of 25 ns (typical
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MS51fl
1x106
1x101
1x109
PIN23
pepi cr
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products Advance Information HX9100 64 X 64 CROSSBAR FEATURES • Fabricated with RICMOS IV Silicon on Insulator S 0l 0.8 nm Process (Le(f = 0.65 fim) • CMOS Compatible I/O • Single 5V ± 10% Power Supply • Full Complement of Screening Flows
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HX9100
21x10®
1x101
HX9100
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9F08
Abstract: ma31750
Text: f.p r P I F S S F Y w S E M PRELIMINARY INFORMATION IC O N D U C T O R S DS3826-3.6 MA31754 PERIPHERAL SUPPORT CHIP PSC The MA31754 is a Peripheral Support Chip (PSC) designed to provide those features which are commonly required in an MA31750 processor system. It can be used to
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DS3826-3
MA31754
MA31754
MA31750
Mil-Std-883
1x101
37b05ES
0023bb5
9F08
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HC6364
Abstract: No abstract text available
Text: Honeywell 8K X 8 RADIATION-HARDENED STATIC RAM HC6364 FEATURES RADIATION OTHER • Fabricated using DESC Approved QML 1.2 urn RICMOS Process • Listed on SMD #5962-38294. Available as M IL-l-38535 QML Class Q and Class V • Total Dose Hardness through
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1x10e
1x109
1x101
IL-l-38535
HC6364
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Untitled
Abstract: No abstract text available
Text: Honeywell 64K X 1 RADIATION-HARDENED STATIC RAM HC6464 FEATURES RADIATION • Fabricated using DESC approved QML 1,2nm RICMOS process • Total Dose Hardness through 1x106 rad SiOz • Neutron Hardness through 1x1 O'* cm 2 OTHER • Access Time of 25 ns (typical)
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1x106
1x109
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Untitled
Abstract: No abstract text available
Text: Honeywell HC6364 Military Products 8K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 urn Process • Total Dose Hardness through 1x106 rad S i02 • Neutron Hardness through 1x1014cm '2 • Access Time of 25 nsec (typical)
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HC6364
1x106
1x1014cm
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products Advance Information HX9100 64 X 64 CROSSBAR FEATURES • Fabricated with RICMOS“ IV Silicon on Insulator S0l 0.8 jxm Process (Letf = 0.65 nm) • CMOS Compatible I/O Total Dose Hardness of >1x10 rad(Si02) Dose Rate Upset Hardness >1x1011rad(Si)/sec (5V)
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HX9100
1x101
1x1012rad
1x101/cm2
HX9100
4SS1A72
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KD 2.d smd transistor
Abstract: No abstract text available
Text: Honeywell Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 |um Process • Total Dose Hardness through 1x106 rad S i02 • Listed on SMD #5962-92153. Available as MIL-l-38535 QML Class Q and Class V
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1x106
1x1014cm
1x109
1x101
HC6856
MIL-l-38535
36-Lead
KD 2.d smd transistor
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HC6364
Abstract: No abstract text available
Text: b3E D MSS1Ô7E ÜGQD^a T Mb Honeywell IH0N3 8K x 8 RADIATION-HARDENED STATIC RAM HC6364 FEATURES OTHER RADIATION Fabricated using DESC Approved QML 1.2 nm RICMOS1“ Process • Listed on SMD #5962-38294. Available as MIL-l-38535 QML Class Q and Class V Total Dose Hardness through
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HC6364
MIL-l-38535
1x10s
1x101
1x109
1x10eto
36-LEAD
28-LEAD
HC6364/1
HC6364
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honeywell mram
Abstract: No abstract text available
Text: 52E D • 4SSlfl?2 - 0D00fl4D DBO ■ H0 N3 HONEYI i l EL L/ S S E C _ Honeywell Preliminary Military Products 16K x 1 NON-VOLATILE RAM HC7167 'T - 4 k '2 £ '0 £ ' FEATURES • Non-volatile and NDRO Non-destructive read out
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0D00fl4D
1x106
1x1014N/cm2
1x101
1x106rad
honeywell mram
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Untitled
Abstract: No abstract text available
Text: bBE D • MSS1Ô7S O O O O ^ HONEYÜI ELL/ S 24T « S E C Honeywell honb - 64K x 1 RADIATION-HARDENED STATIC RAM HC6464 FEATURES RADIATION • Fabricated using DESC approved QML 1.2nm RICMOS process • Total Dose Hardness through 1x10s rad Si02
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HC6464
24-Pin
1x10s
1x101
PIN23
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Untitled
Abstract: No abstract text available
Text: Honeywell HC6856 Military Products Preliminary 256K-BIT RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Bulk 0.8 im Process • Total Dose Hardness through 1x106 rad(Si02 • Optional Architecture - 32K x 8 - 256Kx 1
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HC6856
256K-BIT
1x106
256Kx
1x1014cm
1x109
1x101
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Untitled
Abstract: No abstract text available
Text: Si GEC PLESSEY ADVANCE INFORMATION S E M I C O N D U C T O R S DS3593-2.3 15HSC Series RADIATION HARD HIGH SPEED CMOS/SOS LOGIC The 15HSC Series offer the conbined benefits of low power, high speed CMOS with the inherent latch up immunity, Single Event Upset SEU immunity and high level of radiation
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DS3593-2
15HSC
54HSC
15HSC138
15HSC163
Cobalt-60
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: Si GEC PLESSEY PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS3591-4.4 MA28138 OBDH REMOTE BUS INTERFACE The MA28138 is an OBDH Remote Bus interface RBI that provides the facilities required by a modern packet OBDH bus system but at the same time preserves compatibility with
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DS3591-4
MA28138
MA28138
MA28139
MA28139)
MA28138)
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Untitled
Abstract: No abstract text available
Text: HONE YWEL L / S S E C 3ÖE D 4ssia?a ooddsms a H0 N3 '•■V Military Products 32K X Preliminary 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS Bulk 0.8 nm Process • Total Dose Hardness through 1x106 rad Si02
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HC6856
1x106
1x101
1x109
256Kx
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AAF40
Abstract: atechnology
Text: HONE Y KE LL/ S H o n e y w 1SE 0 S E C I MSSlä?a 00QGM37 □ | HC6616 e l l Preliminary Military Products 2K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION Fabricated with RICMOS Epitaxial 1.2 pm Process Typical 45 ns Access Time Total Dose Hardness through
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00QGM37
HC6616
1x10i4cnr2
1x109
0x10-9
1x1012rad
AAF40
atechnology
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products HC6856 32K x 8 STATIC RAM FEATURES RADIATION OTHER • Fabricated with R IC M O S “ IV Bulk 0.8 urn Process Lelf = 0.65 urn • Listed on SMD #5962-92153. Available as MIL-PRF-38535 QML Class Q and Class V • Total Dose Hardness through 1x106 rad(S i02)
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1x106
1x101
1x109
HC6856
MIL-PRF-38535
36-Leximum
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HX6856
Abstract: x-ray cmos HX6856/2
Text: • I K U Military Products Preliminary 32K x 8 RADIATION-HARDENED STATIC RAM-SGI HX6856 FEATURES OTHER RADIATION Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 |nm Process • Read/Write Cycle Times < 2 5 ns (-55 to125°C ) Total Dose Hardness through 1x106 rad(S i02)
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1x106
1x101
to125
256Kx1
HX6856
36-Lead
28-Lead
HX6856
x-ray cmos
HX6856/2
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