PF 0849 B Search Results

Contextual Info: fiäD D • ñ53SbQS ooi4ss2 5 « s i e g 88D 14552 BUZ 34 SIEMENS AKTIENGESELLSCHAF Main ratings N-Channel Drain-source voltage y03 = 200 V Contlnuous drain current ID a 14 A Draln-source on-reslstance f l 0s on s 0,2 H Description Case SIPMOS, N-channel, enhancement mode

PVA3352

Abstract: d 6283 ic m15 relay PF 0849 B pvd photovoltaic relay crydom reed relay
Contextual Info: CRYDOM CO 74C D 2542537 000051= 1 «¡CRY. BULLETIN PVA-2 INTERNA TIO NAL R EC TIFIER IS C C 1 ¥ [q ) 1 M 1 SERIES PVA BOSFET Photovoltaic Relay Single Pole, 130 mA 0-300V AC/DC GENERAL DESCRIPTION: BOSFET# Power IC 1010 Operations 250 i i Sec Operating Time

Contextual Info: 10 2.45 (0.5) (A) TYP.I2) ^ |-c=g 4.3 0.25 Cto o ?) (PITCH) CKT. NO. E F a 0.65 0.45* >+h5(N0TES) 1. ffiTSAffT (MATERIAL) X-5XJD(TERMINAL): UOraffi PHOSPHOR BRONZE 02 ilE T X X X X + A 1. O X T X D X -E U E T A B TIN-BISMUTH I.O MICROMETER MINIMUM — oAOETTft 1. O X T X n X - M E lX ±

Contextual Info: — 5 ? • 5 / — h - NEC C o m p o u n d T ran sistor m ^ T t v r x BA1 L3M i t <8 O / ^ T è l * J i i L t i - 'i t o R, =4.7 kQ, R2= 4.7 k iJ O BN 1L3M > 3 > -r Ij / > ? IJ f T" è i 1“ ( T a = 25 ° o fé # » * :* :* # n m «ft H't 7/ tì: XM W &

2SB624

Abstract: 2SD596 F50450
Contextual Info: NEC Aj Silico n T ra n s is to r m+Tixrx 2SD596 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier W-ÏÏÆ/ PACKAGE DIMENSIONS Unit:mm ««/FEA TU RES o m J 'B f t - B T t b ’I , ' ^ 7 " U -y K IC ffl t i r m & T t . 2 .8 ± 0 .2 Oh p £ [ wj ^ H p £ - 200 TYP. (V(;£ —1.0 V, Ic~100 rnA)

JE 800 transistor

Abstract: UPA76ha upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s
Contextual Info: NEC W T / \ M À f 7 'S ' h =7 Com pound Transistor ¿¿PA76HA t: ^ n p n x >; □ h^ * N PN Silicon Epitaxial Compound Transistor Differentia! Amplifier ^ f^ H l/PA C K A G E DIMENSIONS if t * / F E A T U R E S O l c h i p m iÊT ibètztb , -< 714 / V b e = 2 m V T Y P . )

2SK149

Contextual Info: SEC k m=*=f/\rx A b = 7 > v * x 9 J u n c tio n Field E ffe c t T ra n s is to r 2SK149 N lJ 3 + h =7 m f t i i f f l Silicon N-channel Ju nctio n FET High Frequency A m p lifie r and M ixer Industrial Use O | y fs|=30 mS T Y P . m m / PACKAGE DIM ENSIONS

uPA77HA

Abstract: upa77 Power amplifier transisitor ST460 Power Transisitor 100V 2A 251U EBMS FST460
Contextual Info: NEC A. l i T / \ m .'g - h Com pound Transisitor ' i 7 ¿¿PA77HA PNP h = 7 > i> 7 ,5 U f c Jl& jg S & Jif liffl PNP Silicon Epitaxial Compound Transistor Differential Amplifier ^ 0 / P A C K A G E D IM ENSIONS Unit: mm ^ / F E A T U R E S 01 chip nm.'chhtztb, ^ r i 4 ( j v b e = 2 mv t y p . ) ^ c ,

TC-6252

Abstract: TC6252 WJ M64
Contextual Info: - r S • — h * SEC i ï r / V C om po un d Transistor Î 7 GN1F4Z ^ 4f J i ^ I U O y< yf 7 l*3 Ü X Î É tf l £ R i = 2 2 L X ^ Î 1 ( - P - Ì Ì ! m m k Q ) B O O o G A 1F 4 Z 3 t > - 7° U / 9 > 'J T l È f f l T ' ë ì e t ( T a — 25 °C) m

KJE 17 transistor

Abstract: transistor k 2628 kje t2 KJE u5 transistor et 454 sd774 l0534 pj 0286 n 332 ab KJE transistor
Contextual Info: SEC j h = 7 ? Silicon T ra n sisto r 2SB734 + U h =7 > i> 7 5 PN P Silicon Epitaxial Transistor Audio Frequency Power Amplifier o YA o T "Pj 7°^oo i 7 > Unit : mm c- \ , ft i t EE T"t~ o P T = 1 .0 W, V C E 0 = — 50 V b =i> 7°') 9 > 9 Q 2SD 774 P A C K A G E D IM EN SIO N S

2SD1518

Abstract: 5AE0 2SD1581 C3052
Contextual Info: NEC Aj i i T / v 2 S D 1581 S ilicon T ran sis to r f z N P N Silicon Epitaxial Transistor Audio Frequency P o w e r Am plifier 2SD1581 i, x > 9 "iv 9 J T V * — hFE h £1-7(50,/P A C K A G E D IM E N S IO N S (Unit : m m ) 1&=> u 7 7 & ftlW .)± X \ W J j v x f r 'P t f 'y 't z t b , \& W M W ± .X c n ^

2SA1462

Abstract: JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor
Contextual Info: NEC i m=ïTivfx A Silicon Transistor 2SA1462 P N P i b " ^ + '> 7 J U M '> ' n > b ^ > ' > * 9 PN P Silicon Epitaxial Transistor High Speed Switching ^ S / P A C K A G E D IM EN SIO N S #ë/FEA TU RES O X - í v f > / 'iÈ ÎÉ Â 'j iË ^ o Unit : mm) ton : 9.0 ns T Y P . , t stg : 16 ns T Y P . ,

2SC3616

Abstract: mar585m PA33
Contextual Info: NEC j '> IJ 3 > Silicon T ran sis to r 2SC3616 N P N l b ° ^ + '> 7 ;i/ i '> lJ b =7 > i> 7 . 9 N PN Silicon Epitaxial T ran sisto r High Gain A m plifier KW M W */ F E A T U R E S /P A C K A G E D IM E N S IO N S Unit : mm O i g j h p E ' C ’t ’ o

SD113

Abstract: SD116 d11510 50117 SD117 SD115 042646 SD111 1866 sd1173
Contextual Info: S 1 D 1 3 , S 1 D R 1 5 . S i S o f f ia SD 1 1 6 , 1 6 D 1 1 7 , S f it NEC Corporation 1988 : mm SD 1 1 7 vi^DHD (D o u b le H e a tsin k 7 ^ 'y — 1 K m SD 1 1 3 , SD 1 1 5 , D D io d e) ÿ 0.5 t f ¿ , -, sxnt £ & ^ è U "? T M & t ^ , f ^ i i i D H D f l l & i C j :

transistor et 454

Abstract: 2SC1842 JE 33 PA33 SC-43A JE 720 transistor transistor afr 46
Contextual Info: NEC j b ^ > '> 9 Silicon T ra n s is to r 2SC1842 NPN Silicon Epitaxial Transistor Audio Frequency Low Noise Amplifier $Së/FEATU RES ^ • ^ H / P A C K A G E D IM EN SIO N S 7'Jt, O fftf;X f Pt, ffl t r —7" u =J - Unit : mm ¿"COfiJg|?£Í9j4'fxít?lt>I

2SJ153

Contextual Info: M O S Field Effect Pow er Transistor 2SJ153 P f^ ;U / N ° 7 - M O S FET I i f f l 2SJ153 i, MOS FET T, 5 V H i * IC (c J; è Æ æ œ S O T t ë f r i S i i t X ' f * < , y w / 'i # K, y x ' f •/ f - > 7 f > X f t W B 0 ( T O : mm „ i , f f i - i x T ^ S fc * > ,

8115, transistor

Abstract: TFK03 2SC3360 T108
Contextual Info: NEC j '> U =1 > h i> J* ^ T r a n s is t o r = 7 > S ilic o n 2SC3360 N P N x t °^ + '> 7 ; P i'> ¡ Ü I Î / ± ± i ifs «fc * U =3 > h ^ -r -y ^ V X ^ NPN Epitaxial Silicon Transistor High Voltage Amplifier and Switching ^ B U / P A C K A G E DIMENSIONS

2SA988

Abstract: 2sa988 transistor A0222-6 1T0266 2SA9881 NEC 41-A 002 PA33 T108 T210 T540
Contextual Info: i s I Silicon Transistor # W-MM # f i : mm) it ffijfftigils, Ì É ì S l t x 4 v & 'y 'T , 50 mA i x-60# K 7 ï r f f l O L x \tm x $ t t o s b îœ , to mmmmvtifê.x'to ss hFE *>-?, 120 v V,CEO : - hFE (Ic = - 1.0 mA) : 500 T Y P . (Ta = 25 °C )

2SA1626

Abstract: S0532 TRANSISTOR BO 346 X108 TIA03
Contextual Info: NEC À Silicon Transistor 2SA1626 PNP ¡S& ÉL Sil i E X -f "J *f-> *f PN P Silicon Triple Diffused Transistor High Speed High Voltage Switching ft ftw m m o PtjÉJ'E'C-to V Ceo = — 400 V o x ^ y f > ^ " X : mm 7.0 M A X . b°— tf<0.7 /US T a = 25 ° C )

2SC3734

Abstract: odv marking
Contextual Info: NEC Ì ^ Silicon Tran sistor f / \ f 7 2SC3734 n p n i e ¡ u n ì & 9 * ì/ ~ n v W m m & £ 9 iis i; zi v b v ' ^ m j g X ' i ' y * > 7 ' m NPN Silicon Epitaxial Transistor High Frequency Amplifier and Switching »«/FEA TU RES PACKAGE DIMENSIONS U nit : m m

Hf460

Abstract: 5T45 JE 33 2SK784 X108
Contextual Info: ~ T— S 7 • 5 / — h M O S Field Effect P ow er Transistor 2SK784 MOS F E T I 2 S K 784 ì , N f t ^ x y / N ffia>'ÎS< , > x / > -y ^ ü b M ''° V - M O S 9, ïS JS ï£ x ^ F E T T jr > ( m iÜ m m v*h>iT*M, 0 3 . 2 + 0. 2 D C -D C n > ' < - ? i z S i l T '- t o

2SK194

Abstract: JE 33 T108 T460 9 BJE 53 JE 720 transistor BJE 247
Contextual Info: NEC j m^TiYtx A J u n c t io n Field E ffe c t T r a n s is to r 2SK194 im -n W z Y =7 N-Channel Silicon Junction Field-Effect Transistor Audio Frequency Low Noise Differential Amplifier # ä / T E IT ä t r e P A CK A G E DIM ENSIONS § Unit : mm o s ìè js ìf f e t - c b » x t

tf 044

Abstract: 2SK490 JE 33 HT - 0886 b0236 HT 0886
Contextual Info: HEC j M O S Field Effect P ow er Transistor _ 2SK490 N - ^ * ; i ^ N 0r7 - M O S FET i i f f l N-Channel M OS Field Effect Power Transistor Switching Industrial Use 2SK490ii, N f - M O S FET W B 0 / P A C K A G E D IM EN SION S Unit: mm < , 4 X -y - f - >

L0836

Abstract: TRANSISTOR C 6090 l5 transistor PNP transistor PNP L5 2SB1217
Contextual Info: SEC Aj Silicon P o w e r Tran sistor n ^ /v rz _ 2 S B 1 2 1 7 PNPX " S ^ > ? PNP Silicon Epitaxial T ran sisto r Audio Frequency A m plifier, M edium Speed Switching U n it : mm ° < , I) f i V c E ( s a t ) T " t ' o L I c(do = —3.0 A, Ic (Puise)=~5.0 A