PG130G Search Results

Contextual Info: DATA SHEET NEC GaAs INTEGRATED CIRCUIT Aî PG130G L-BAND SPDT SWITCH DESCRIPTION /xP G 130G isan L-B andS P D T Single P oleD oubleT hrow G aA sF E T switch w hich w as developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss.

saa 1068

Abstract: T 927 SAA 1006 saa 1070
Contextual Info: L-BAND SPDT MMIC SWITCH ^ G130GR UPG131GR FEATURES_ • HIGH OUTPUT POWER: 2 Watt Minimum PG130GR • LOW INSERTION LOSS: 0.6 dB Typical at 2.0 GHz • LOW CONTROL CURRENT: 50 nA Maximum • SMALL 8 PIN SOP PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE

IS-54

Abstract: SPDT FETs uPG13xG
Contextual Info: µPG13xG SERIES L-BAND SPDT SWITCH GaAs MMIC 1. OVERVIEW OF SERIES The µPG13xG Series is a collection of GaAs MMICs developed as SPDT Single-Pole, Double-Throw switches for digital mobile communications terminals on the L to S bands. These ICs can operate from 100 MHz to 2.5 GHz

Contextual Info: DATA SHEET NEC GaAs INTEGRATED CIRCUIT /iPG133G L-BAND SPDT SWITCH DESCRIPTION UPG133G is an L-BandSPDT Single Pole DoubleThrow GaAs FET switch which was developed fordigital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss.

smd+2tx

Contextual Info: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT ¿ iP G 13 9 G V L-BAND DPDT MMIC SWITCH DESCRIPTION The ^¡PG139GV is L-Band Double Pole, Double Throw DPDT switch developed for digital cellular or cordless telephone and PCS applications.