PHDIP Search Results

Contextual Info: f Z J ^7# S C S -T H O M S O N M K 4 8 Z 0 8 ,1 8 M K 4 8 Z 0 9 ,1 9 CMOS 8K x 8 ZEROPOW ER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ PREDICTED WORST CASE BATTERY LIFE OF

MK48Z30

Contextual Info: S5E D • 7 ^ 2 3 7 003fl3flb T13 ■ SGS-THOMSON SGTH T - ^ - 2 L 3 “ / J MK48Z3Ö MK48Z30Y S G S- THOMSON CMOS 32K x 8 ZEROPOWER SRAM ■ INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE

Contextual Info: SCS-THOMSON MKI48Z18 CMOS 8K x 8 ZEROPOWER SRAM ADVANCE DATA • INDUSTRIAL TEMPERATURE RANGE -40‘C TO +85"C ■ INTEGRATED LOW POWER SRAM, POWERFAIL C O N TR O L C IR C U IT AND ENERGY SOURCE ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE

Contextual Info: 55E /T T *7 # . P • 7 ^ 5 3 7 0036365 S C S -1 H O M S O N * [l» [i g « M (g § 376 s 6 ■S6TH T -H é -¿ 3 - / s - thomson M K I4 8 Z 1 8 CMOS 8K x 8 ZEROPOWER SRAM ADVANCE DATA ■ INDUSTRIAL TEMPERATURE RANGE -40‘C TO +85"C ■ INTEGRATED LOW POWER SRAM, POWERFAIL CO NTRO L C IR C U IT AND ENERGY

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

LF347

Abstract: LF247 LF147 TT1510
Contextual Info: m M , S G S - T H O M S O N L F 1 4 7 - L F 2 4 7 M g fô ( M [L I( § r e [( l( g S L F 3 4 7 WIDE BANDWIDTH QUAD J-FET OPERATIONAL AMPLIFIERS _ • LOW POWER CONSUMPTION ■ WIDE COMMON-MODE (UP TO Vcc+ AND DIFFERENTIAL VOLTAGE RANGE ■ LOW INPUT BIAS AND OFFSET CURRENT

MK48Z08 equivalent

Abstract: MK48Z09 MK48Z08 MK48Z18 PHDIP thomson tv circuit diagram
Contextual Info: 52E S G » • □□3Ô37G S - T H O M S O « e r a bSb ■ S G T H T - V ^ - 2 3 - |2_ N M K 4 8 Z 0 8 .1 8 « M K 4 8 Z 0 9 ,1 9 S G S - TH OH SO N CMOS 8K x 8 ZEROPOWER SRAM ■ INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­

MK48T08

Abstract: MK48T18 tle 8760 mk48T08b10
Contextual Info: r z j S C S -T H O M S O N ^7# iSD ^@ILŒCTl@iD gi MK48T08 MK48T18 CMOS 8K x 8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, CRYSTAL, POWER-FAIL CONTROL CIRCUIT AND BATTERY. ■ BYTEWIDE RAM-LIKE CLOCK ACCESS. ■ BCD CODED YEAR, MONTH, DAY, DATE,

48T02

Contextual Info: r Z Z SGS-THOMSON MK48T02 MK48T12 MiOœtittJig «! CMOS 2K X 8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIM E CLOCK, CRYSTAL, POWER-FAIL CO NTRO L C IRCUIT AND BATTERY. ■ BYTEW IDE RAM-LIKE CLO CK ACCESS. ■ BCD C O D E D YEAR , M O NTH, DAY, DATE,

trw 1014

Contextual Info: SGS-THOMSON [UD gi IQJ(gra iQ©S CMOS 64 X MK48T87 8 ADDRESS/DATA MULTIPLEXED TIMEKEEPER SRAM • DROP-IN REPLACEM ENT FOR PC AT CO M ­ PUTER CLOCK/CALENDAR ■ TOTALLY NONVOLATILE W ITH 10 YEARS OF OPERATION IN THE ABSENCE OF POWER « SELF-CO NTAINED SUBSYSTEM INCLUDES

Contextual Info: r Z Z SGS-THOMSON M iE œ & ia m iie s MKI48Z02 MKI48Z12 CMOS 2K x 8 ZEROPOWER SRAM * INDUSTRIAL TEMPERATURE RANGE - 40°C to + 85°C. • PREDICTED WORST CASE BATTERY LIFE OF 6 YEARS @ 85°C. ■ DATA RETENTION IN THE ABSENCE OF POWER. ■ DATA SECURITY PROVIDED BY AUTOMATIC

MK48T02

Contextual Info: f Z 7 S C S -T H O M S O N Ä 7# M K 48T02 M K48T12 CMOS 2K X 8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, CRYSTAL, POWER-FAIL CONTROL CIRCUIT AND BATTERY. ■ BYTEWIDE RAM-LIKE CLOCK ACCESS. ■ BCD CODED YEAR, MONTH, DAY, DATE,

Contextual Info: r z 7 SCS-THOMSON ^ 7# MK48Z32 MK48Z32Y CMOS 32K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ MINIMUM BATTERY BACK-UP OF 10 YEARS

256x16 eprom

Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
Contextual Info: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1

8925m

Contextual Info: fZ T S G S -T H O M S O N “ 7# M K48Z32 M K48Z32Y CMOS 32K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ MINIMUM BATTERY BACK-UP OF 10 YEARS

Contextual Info: SEE D • 7 t12ci 2 3 7 G03Ô3SÛ OST ■ SGTH T - V é - Z J - / 2 - SGS-THOMSON *^ e [i[Li(gTm(Q*S MKI48Z02 MKI48Z12 S 6 S-THOMSON CMOS 2K x 8 ZEROPOWER SRAM ■ INDUSTRIAL TEMPERATURE RANGE - 40°C to + 85°C. ■ PREDICTED WORST CASE BATTERY LIFE OF 6 YEARS @ 85°C.

Contextual Info: rz rz SGS-THOMSON G«[f3 6 [ILiOT@«§ MK48Z02 MK48Z12 CMOS 2K x 8 ZEROPOWER SRAM • PREDICTED WORST CASE BATTERY LIFE OF 11 YEARS @ 70°C ■ DATA RETENTION IN THE ABSENCE OF POWER ■ DATA SECURITY PROVIDED BY AUTOMATIC WRITE PROTECTION DURING POWER FAILURE

Contextual Info: SEE T> m 7l12c1237 DD36MD0 113 «SGTH SGS-THOMSON ¡5 MK48Z32 MK48Z32Y 6 S-THOflSON CMOS 32K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE

hst 1025

Abstract: MK48T02 PHDIP24 6116 ram 2k 48t02 H99XXYYZZ 1032 TCEA MK48T12 "binary to bcd"
Contextual Info: 52E D • 7 ‘1ECJB37 DD3flS0M 74T ■ S 6 T H Z, MK48T02 MK48T12 SGS-THOMSON ilLHOT *! S G S-THOMSON CMOS 2K x 8 TIMEKEEPER SRAM ■ INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, CRYSTAL, POWER-FAIL CONTROL CIRCUIT AND BATTERY. ■ BYTEWIDE RAM-LIKE CLOCK ACCESS.

MK48T87B24

Abstract: MK48T87B-24 MK48T87B
Contextual Info: r z 7 S G S -T H O M S O N Ä 7#@ G « [ F i K m [ l O T * S M K48T87 CMOS 64 x 8 ADDRESS/DATA MULTIPLEXED TIMEKEEPER SRAM • DROP-IN REPLACEMENT FOR PC AT COM­ PUTER CLOCK/CALENDAR ■ TOTALLY NONVOLATILE WITH 10 YEARS OF OPERATION IN THE ABSENCE OF POWER

MKI48Z18

Abstract: PHDIP
Contextual Info: ¿Z J SGS-THOMSON MKI48Z18 CMOS 8K x 8 ZEROPOWER SRAM ADVANCE DATA • INDUSTRIAL TEM PERATURE RANGE -40°C TO +85‘ C ■ INTEGRATED LOW POWER SRAM, POWERF A IL C O N T R O L C IR C U IT A N D E N E R G Y SOURCE ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS W RITE-CYCLE

MKI48Z18

Contextual Info: Æ 7 SGS-THOMSON MKI48Z18 ^ 7# l* ® S iLi(M (ô)K i(g S CMOS 8K x 8 ZEROPOWER SRAM ADVANCE DATA • INDUSTRIAL TEMPERATURE RANGE -40’C TO +85"C ■ INTEGRATED LOW POWER SRAM, POWERFAIL C O N TR O L C IR C U IT AND ENERGY SOURCE ■ UNLIMITED WRITE-CYCLES.

stm 8322

Abstract: 48Z08 MK48Z09
Contextual Info: r z 7 S G S -T H O M S O N *> 7 M G W T O ilL I^ G M D ! M K 4 8 Z 0 8 ,1 8 M K 4 8 Z 0 9 ,1 9 CMOS 8K x 8 ZEROPOW ER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE

Contextual Info: S2E 1> £ Z 7 ^ 7 # • 7 S 2 CÌ2 3 7 OOBflSlfl 23M ■ S 6 T H T - V £ - Z 3 - / 2 _ S G S -T H O M S O N 5 M K 4 8 T 0 8 J L i T m ® « t _ M K 4 8 T 1 8 S G S-TH0I1S0N CMOS 8K x 8 TIMEKEEPER SRAM ■ INTEGRATED ULTRA LOW POWER SRAM,