PHEMT FET MARKING L Search Results

01248

Contextual Info: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and

sot43

Contextual Info: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and

ZO 607 MA

Abstract: 4948 ta 6203 CFH400 Q62702-G0116
Contextual Info: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and

P3F filtronic

Abstract: pHEMT FET marking A FPD10000AF MIL-HDBK-263 PHEMT marking code a PHEMT marking code B
Contextual Info: PRELIMINARY FPD10000AF 10W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 40 dBm Output Power (P1dB) ♦ 11 dB Power Gain (G1dB) ♦ -44 dBc WCDMA ACPR at 30 dBm output power ♦ 180 to 300 mA typical quiescent current (IDQ) ♦ 55% Power-Added Efficiency

PHEMT marking code a

Abstract: FET P2F pHEMT FET marking l transistor code p2f pHEMT FET marking A
Contextual Info: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website

transistor SMD P2F

Abstract: FPD4000AF PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE
Contextual Info: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website

AS211-334

Contextual Info: DATA SHEET AS211-334: PHEMT GaAs IC SPDT Switch LF–4 GHz Applications ● Pin Out Top View General-purpose switch for telecommunication applications J3 1 6 2 5 3 4 V2 CBL Features P1 dB 30 dBm typical @ 3 V IP3 43 dBm typical @ 3 V ● Low insertion loss (0.3 dB @ 0.9 GHz)

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

S277

Abstract: QFN-20 reflow QFN-20 skyworks QFN-20
Contextual Info: PRELIMINARY DATA SHEET SKY13277-355LF: GaAs SP3T Absorptive Switch 500 MHz–2.5 GHz Features Functional Diagram Positive voltage control 0/3 V typ. ● High isolation 62 dB at 1 GHz ● Integrated silicon CMOS driver ● Isolated ports are absorptive ● Available lead (Pb)-free and RoHS-compliant MSL-1 @ 260°C

S277

Abstract: QFN-20 SKY13277-355LF Marking s277 GND214
Contextual Info: DATA SHEET SKY13277-355LF: GaAs SP3T Absorptive Switch 500 MHz–2.5 GHz Features Functional Diagram Positive voltage control 0/3 V typ. ● High isolation 62 dB at 1 GHz ● Integrated silicon CMOS driver ● Isolated ports are absorptive ● Available lead (Pb)-free and RoHS-compliant MSL-1 @ 260°C

srf 3417

Abstract: transistor srf 3417 SKY77329 transistor tt 2170 em digrf SKY77519 MARKING CODE EA1 SKY77408 sky72302-21 sky77506
Contextual Info: Product Selection Guide Spring 2007 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high performance analog and mixed signal semiconductors enabling mobile connectivity. The company’s power amplifiers, front-end modules and direct conversion radios are at the heart of many of today’s leading-edge

47146

Abstract: 41146
Contextual Info: CFH800 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and

transmitter microwave

Abstract: marking 1GL marking code IAM transistor MARKING IAM A004R IAM-92516 IAM-92516-BLK IAM-92516-TR1 IAM-92516-TR2 MO229
Contextual Info: Agilent IAM-92516 High Linearity GaAs FET Mixer Data Sheet Features DC = 5V @ 26 mA Typ. RF = 1.91 GHz, PinRF = -10 dBm; LO = 1.7 GHz, PinLO = -3 dBm; IF = 210 MHz unlesss otherwise specified • Lead-free Option Available Description Agilent Technologies’s IAM-92516

MRF high power transistor

Abstract: transmitter microwave electronic transformer halogen mmds down converter "Up/Down Converter" amplifier marking code a FET GAAS marking a PHEMT marking code a gaas fet marking a gaas Low Noise Amplifier
Contextual Info: IAM-92516 High Linearity GaAs FET Mixer Data Sheet Description Avago Technologies’s IAM-92516 is a high linearity GaAs FET Mixer using 0.5 µm enhancement mode pHEMT technology. This device houses in Pb-free and Halogen free 16 pins LPCC 3x3[2] plastic package. The IAM-92516 has

47146

Abstract: SOT43 402 5921
Contextual Info: CFH800 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and

transmitter microwave

Abstract: transistor MARKING IAM IAM-92516 IAM-92516-BLK IAM-92516-TR1 IAM-92516-TR2 MO229 Receiver Circuit Schematic
Contextual Info: Agilent IAM-92516 High Linearity GaAs FET Mixer Data Sheet Features DC = 5V @ 26 mA Typ. RF = 1.91 GHz, PinRF = -10 dBm; LO = 1.7 GHz, PinLO = -3 dBm; IF = 210 MHz unlesss otherwise specified • High Linearity: 27 dBm IIP3 Description Agilent Technologies’s IAM-92516

amplifier marking code D

Abstract: FET GAAS marking a gaas fet marking a gaas Low Noise Amplifier marking code IAM PHEMT marking code a am ssb receiver balun diode mixer marking 1GL SSB Receiver
Contextual Info: IAM - 93516 High Linearity Integrated GaAs Mixer Data Sheet Description Applications Avago Technologies’ IAM-93516 is a high linearity GaAs FET Mixer using 0.5um enhancement mode pHEMT technology. This device houses in a 3x3 LPCC package. The IAM-93516 has a built-in LO buffer amplifier and an IF amplification

IAM93516

Abstract: IAM-93516 IAM-93516-BLK IAM-93516-TR1 IAM-93516-TR2
Contextual Info: Agilent IAM-93516 High Linearity Integrated GaAs Mixer Data Sheet Description Agilent Technologies’s IAM93516 is a high linearity GaAs FET Mixer using 0.5um enhancement mode pHEMT technology. This device houses in a 3x3 LPCC package. The IAM-93516 has a built-in LO

CFH120-08

Contextual Info: CFH 120-08 Datasheet Low Noise pHEMT Packaged FET Description: The CFH 120-08 is a high linearity, very low noise pHEMT FET for general purpose, low noise front-end applications. Noise figures as low as 0.65 dB with associated gain of 12 dB are achievable at 12 GHz

Contextual Info: CFH 120-08 Datasheet Low Noise pHEMT Packaged FET Description: The CFH 120-08 is a high linearity, very low noise pHEMT FET for general purpose, low noise front-end applications. Noise figures as low as 0.65 dB with associated gain of 12 dB are achievable at 12 GHz

marking K gaas fet

Abstract: EHT09250 GVQ09253 Mixer Output IP3 41 dBm
Contextual Info: GaAs MMIC CMH 0819 Preliminary Data Sheet • High-Linearity, Dual-Band LNA/Mixer IC for use in CDMA Mobile Phones • Integrated bypass switch for LNAs • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package • LO - Input power down to: – 7.0 dBm

sot marking a1 353

Abstract: ATF-34143-BLKG ATF-34143 A004R ATF-33143 ATF-34143-BLK ATF-34143-TR1 ATF-34143-TR2 LA 7873
Contextual Info: ATF-34143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Based on its featured performance, ATF-34143 is ideal for the first stage of base station LNA due to the excellent combination of low noise figure and high linearity[1]. The device is also suitable for

atf34143

Abstract: ATF-33143 ATF-34143 ATF-34143-BLK ATF-34143-TR1 ATF-34143-TR2
Contextual Info: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-34143 Features • Low Noise Figure Surface Mount Package SOT-343 • Excellent Uniformity in Product Specifications • 800 micron Gate Width • Low Cost Surface Mount Small Plastic Package

SHF-0289Z

Abstract: SHF0289Z GaAS fet sot89 SHF0289ZSQ
Contextual Info: SHF0289Z SHF0289Z 0.05GHz to 6GHz, 1.0Watt GaAs HFET 0.05GHz to 6GHz, 1.0WATT GaAs HFET Package: SOT-89 Product Description Features RFMD’s SHF0289Z is a high performance AIGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET technology improves