SOT43 Search Results

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor RX1214B300Y FEATURES PINNING - SOT439A

uhf transistor amplifier

Abstract: BGY172 SC09 uhf amplifier
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGY172 UHF amplifier module Objective specification File under Discrete Semiconductors, SC09 1996 May 22 Philips Semiconductors Objective specification UHF amplifier module BGY172 FEATURES PINNING - SOT434A • 7.2 V nominal supply voltage

C 245 B

Abstract: diode u2 40 sot437a philips 648
Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT437A D A F 3 D1 U1 B q C c 1 H U2 E E1 A w1 M A M B M p 2 w2 M C M b Q 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions

RX1214B300Y

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES RX1214B300Y PINNING - SOT439A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

gk06

Abstract: microwave transistor S- parameter GK066
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES MX0912B251Y PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

Contextual Info: Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT437A D A F 3 D1 U1 B q C c 1 H U2 E E1 A w1 M A M B M p 2 w2 M C M b Q 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b c D D1 E E1

Contextual Info: PDF: 2003 Mar 24 Philips Semiconductors Package outline HSQFP208: plastic thermal enhanced shrink quad flat package; 208 leads lead length 1.3 mm ; body 28 x 28 x 3.4 mm; high stand-off height; heatsink SOT431-1 c y X A Dh 156 157 105 104 ZE e E HE Eh A A2

BGY172

Contextual Info: Objective specification Philips Semiconductors UHF amplifier module BGY172 PINNING - SOT434A FEATURES • 7.2 V nominal supply voltage PIN • 5 W output power 1 • Easy output power control by DC voltage. 2 DESCRIPTION RF input + V c APPLICATIONS 4 Vsi Vs2

RF MOSFET MODULE

Abstract: BGY152A BGY152B
Contextual Info: Preliminary specification Philips Semiconductors UHF amplifier modules BGY152A; BGY152B FEATURES PINNING - SOT434A • 7.2 V nominal supply voltage DESCRIPTION PIN • 7 W output power 1 RF input + Vc • Easy output power control by DC voltage. 2 Vsi 3 Vs2

MGS956

Abstract: TRansistor CQ 648
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18040XL UHF power transistor Product specification 1999 Dec 06 Philips Semiconductors Product specification UHF power transistor LLE18040XL FEATURES PINNING - SOT437A • Emitter ballasting resistors for optimum temperature

sot433

Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline PLCC52: plastic leaded chip carrier; 52 leads; thin version SOT433-1 eD eE y X 46 A 34 33 47 ZE bp b1 w M 52 E 1 pin 1 index HE A A4 e A1 A 3 7 β 21 Lp detail X 8 k 20 e v M A ZD D B HD v M B 5 10 mm

LQFP160

Abstract: sot435
Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline LQFP160: plastic low profile quad flat package; 160 leads; body 24 x 24 x 1.4 mm SOT435-1 c y X A 120 81 121 ZE 80 e E HE A A2 A1 A 3 θ wM Lp bp L detail X pin 1 index 41 160 1 40 bp e ZD wM v M A

Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT439A D A F 3 D1 U1 B q C c 1 H p U2 A E1 E w1 M A M B M 2 w2 M C M b Q 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions

B0813

Abstract: PT9787 8C440 MJ3237 trw PT9787 MM4048 MJE42C MJ2841 MOTOROLA MM1758 mmt2857
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 NA31KY NA31MH NA31 MY SK3248 NA31KI NA31MI NA31KJ NA31MJ ~~~~g: 25 30 2NS204 S15-28 SMl5501 SMl550S SMl5511 SMl5901 SMl590S SMl5911 ~~~j~~ 35 40 80Y10 80Y10 PT9787 PT9787A 2N4431 2S022S 2S0226 SOT4301

MX0912B251Y

Abstract: capacitor 470 uF
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B251Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A

RX1214B300Y

Abstract: RX1214B300 L-Band
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor RX1214B300Y FEATURES PINNING - SOT439A

BUT11A1

Abstract: Power Bipolar Transistors bu2708dx BU2725DX BU1508AX BU4506AX BU2532 BU4506AF BU2720DX BU2527
Contextual Info: LEADED PACKAGES VcESM V 1500 tf lc lc (DC) sat. max. (A) 2.5 (A) 2 fas) 0.9 S0T82 S0T78 (T0220AB) S0T186A S0T186 (isolated S0T199 T0220AB) BU505 BU505D BU505F BU505DF BU506 BU506D BU506F BU506DF S0T399 (TOP3D) SOT429 (T0247) SOT430 (TOP3L) TYPICAL APPLICATIONS

Contextual Info: DISCRETE SEMICONDUCTORS DAT MX0912B251Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A • Interdigitated structure; high emitter efficiency

SMD Transistor G6

Abstract: BLV2044 SMD ic catalogue
Contextual Info: Philips Semiconductors Product specification UHF power transistor BLV2044 FEATURES PINNING - SOT437A • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output matching to achieve high

JH transistor

Abstract: MX0912B251Y SC15 Philips electrolytic screw
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

transistor 359 AJ

Contextual Info: DISCRETE SEMICONDUCTORS DAT MX0912B351Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y FEATURES PINNING - SOT439A • Interdigitated structure; high emitter efficiency

SOT430

Abstract: jumbo led datasheet TO-247
Contextual Info: PDF: 1999 Sep 14 Philips Semiconductors Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-247 Jumbo E SOT430 A P A1 q R S D Y R1 R2 R2 L1 1 Q b2 L 1 2 3 c w M b b1 e e 10 20 mm scale DIMENSIONS (mm are the original dimensions)

Power Bipolar Transistors

Contextual Info: PACKAGE OUTLINES Page SOT78 T0-220AB SOT82 SOT186(10-220) S O U 86A (Isolated TO-220AB) SOT199 SOT399 (TOP3D) 754 755 756 757 758 759 SOT429 (TO-247) SOT43Q (TOP3L) 760 761 Philips Semiconductors Power Bipolar Transistors Package outlines Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-22QAB

GL-056

Abstract: sot439
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES MX0912B351Y PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR