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    PHEMT MARKING CODE A Search Results

    PHEMT MARKING CODE A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    PHEMT MARKING CODE A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor SMD P2F

    Abstract: FPD4000AF PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE
    Text: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website


    Original     		PDF FPD4000AF FPD4000AF ATC600S330JW250 T491B105M035AS7015 RCI-0603-10R1J PC-SP-000022-002 AMP-103185-2 transistor SMD P2F PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE

    PHEMT marking code a

    Abstract: FET P2F pHEMT FET marking l transistor code p2f pHEMT FET marking A
    Text: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website


    Original     		PDF FPD4000AF FPD4000AF PHEMT marking code a FET P2F pHEMT FET marking l transistor code p2f pHEMT FET marking A

    transistor P2F

    Abstract: p2f 250 PHEMT marking code a p2F 45 FPD2000AS MIL-HDBK-263 40 P1dB 2W transistor marking code 1325
    Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Usable Gain to 4GHz


    Original     		PDF FPD2000AS FPD2000AS 350mA transistor P2F p2f 250 PHEMT marking code a p2F 45 MIL-HDBK-263 40 P1dB 2W transistor marking code 1325

    P3F filtronic

    Abstract: pHEMT FET marking A FPD10000AF MIL-HDBK-263 PHEMT marking code a PHEMT marking code B
    Text: PRELIMINARY FPD10000AF 10W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 40 dBm Output Power (P1dB) ♦ 11 dB Power Gain (G1dB) ♦ -44 dBc WCDMA ACPR at 30 dBm output power ♦ 180 to 300 mA typical quiescent current (IDQ) ♦ 55% Power-Added Efficiency


    Original     		PDF FPD10000AF FPD10000AF FPD10000AF) P3F filtronic pHEMT FET marking A MIL-HDBK-263 PHEMT marking code a PHEMT marking code B

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS


    Original     		PDF FPD2000AS FPD2000AS 350mA

    transistor SMD P1f

    Abstract: R04003 A114 A115 FPD1000AS JESD22 ATC600S5R6CW250 PHEMT marking code a ATC600S680 marking code P1F
    Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


    Original     		PDF FPD1000AS FPD1000AS R04003, CB100 transistor SMD P1f R04003 A114 A115 JESD22 ATC600S5R6CW250 PHEMT marking code a ATC600S680 marking code P1F

    ATC600S680JW250

    Abstract: PC-SP-000010-006 AMP-103185-2 atc600s ATC600S5R T491B105M035AS7015 ATC600S2R0BW250 ATC600S680 ATC600S3R
    Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS


    Original     		PDF FPD1000AS FPD1000AS R04003, CB100 ATC600S680JW250 PC-SP-000010-006 AMP-103185-2 atc600s ATC600S5R T491B105M035AS7015 ATC600S2R0BW250 ATC600S680 ATC600S3R

    Transistor p1f

    Abstract: MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS FPD4000AS
    Text: FPD4000AS 2.5W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 34.5 dBm Output Power (P1dB) ♦ 12 dB Power Gain (G1dB) ♦ 45 dBm Output IP3 ♦ 8V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website


    Original     		PDF FPD4000AS FPD4000AS 200mA Transistor p1f MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS

    FPD7612P70

    Abstract: PHEMT marking code a HEMT marking P InP transistor HEMT MIL-HDBK-263 Gan hemt transistor RFMD rfmd model marking code
    Text: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT RoHS Compliant Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.


    Original     		PDF FPD7612P70 FPD7612P70 22dBm 85GHz 18GHz 11GHz) PHEMT marking code a HEMT marking P InP transistor HEMT MIL-HDBK-263 Gan hemt transistor RFMD rfmd model marking code

    Untitled

    Abstract: No abstract text available
    Text: TAT7469 CATV 75 Ω pHEMT Dual RF Amplifier Applications • • • • Edge QAM Gain Stage MDU Output RF Distribution Amplifiers Low Noise Optical TIA SOIC-8 Package Product Features Functional Block Diagram • 75 Ω, 50 MHz to 1200 MHz Bandwidth • RF Low Noise Figure: 3.2 dB to 1000 MHz


    Original     		PDF TAT7469 S21Typ

    ultrasonic radar

    Abstract: radar 77 ghz FMCW Radar infineon ACC_PLL_1 Dielectric Resonator Oscillator DRO radar mmic FMCW Radar Module Infineon 77 GHz VCO FMCW circuit infineon FMCW
    Text: 77 GHz MPA for Car Radar Systems T626_MPA2_W Preliminary Data Sheet • • • • Operating Frequency: 76 - 77 GHz Output Power: + 13 dBm Input and Output matched to 50 Ω Application in Car Radar Systems ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original     		PDF Q62702-G173 EHT09247 ultrasonic radar radar 77 ghz FMCW Radar infineon ACC_PLL_1 Dielectric Resonator Oscillator DRO radar mmic FMCW Radar Module Infineon 77 GHz VCO FMCW circuit infineon FMCW

    FMCW Radar

    Abstract: infineon FMCW ultrasonic radar 77 GHz VCO fmcw generation radar 77 ghz FMCW Radar Module FMCW FMCW circuit VCO 77 GHZ
    Text: 77 GHz VCO for Car Radar Systems T625_VCO2_W Preliminary Data Sheet • • • • Operating Frequency: 76 - 77 GHz Tuning Range > 1 GHz Output matched to 50 Ω Application in Car Radar Systems ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original     		PDF Q62702-G172 EHT09247 FMCW Radar infineon FMCW ultrasonic radar 77 GHz VCO fmcw generation radar 77 ghz FMCW Radar Module FMCW FMCW circuit VCO 77 GHZ

    AN01

    Abstract: wireless switch transmit receive sc70 marking 06 rf
    Text: FMM5317ZW Single Pole Double Throw Switch Wireless LAN / WiMAX Transmit / Receive Applications FEATURES • • • • • High Input P0.1dB: +34 dBm Typ Low Insertion Loss: 0.55 dB Typ at 2.4 GHz High Isolation: 25 dB Typ at 2.4 GHz GaAs PHEMT technology


    Original     		PDF FMM5317ZW SC-70 OT363 FMM5317ZW AN01 wireless switch transmit receive sc70 marking 06 rf

    Untitled

    Abstract: No abstract text available
    Text: FMS2031-001 FMS2031-001 10W GaAs pHEMT SPDT Switch 10W GaAs pHEMT SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2031-001 is a 10W, Single-pole, Double-throw, SPDT GaAs pHEMT reflective antenna switch. The switch offers excellent power handling capability and harmonic performance. The FMS2031-001 is designed for use in WiMax, L-, S-, and Cband wireless applications and WLAN access points where high linearity switching


    Original     		PDF FMS2031-001 FMS2031-001 35dBm EIA-481-1 DS100331 FMS2031410

    spf-5043

    Abstract: MARKING SPF5043Z spf-5043z SPF5043 spf5043z TAJB104KLRF SPF5043ZPCK1 SPF5043ZSR spf5043zsq
    Text: SPF5043Z SPF5043Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Features The SPF5043Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF5043Z offers ultra-low noise figure and high linearity


    Original     		PDF SPF5043Z 50MHz 4000MHz, SPF5043Z 4000MHz. spf-5043 MARKING SPF5043Z spf-5043z SPF5043 TAJB104KLRF SPF5043ZPCK1 SPF5043ZSR spf5043zsq

    MARKING SPF5043Z

    Abstract: SPF5043Z
    Text: SPF5043Z SPF5043Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Features The SPF5043Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF5043Z offers ultra-low noise figure and high linearity


    Original     		PDF SPF5043Z 50MHz 4000MHz, SPF5043Z 4000MHz. MARKING SPF5043Z

    P 9806 AD

    Abstract: No abstract text available
    Text: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power


    Original     		PDF FPD2000AS FPD2000AS 33dBm 46dBm 880MHz) EB-2000AS-AB 85GHz) EB-2000AS-AA P 9806 AD

    transistor Bc 542

    Abstract: transistor bc 567
    Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power


    Original     		PDF FPD1000AS FPD1000AS 31dBm 42dBm -52dBc 21dBm 85GHz) EB-1000AS-AA 14GHz) transistor Bc 542 transistor bc 567

    CXE1089Z

    Abstract: MMIC SOT 89 marking CODE 02 CXE-1089 1200MHZ lna CXE1089
    Text: CXE-1089Z CXE-1089Z 50MHz to 1200MHz 75Ω pHEMT MMIC LNA 50MHz to 1200MHz 75Ω pHEMT MMIC LNA Package: SOT-89 Product Description Features RFMD’s CXE-1089Z is a high performance 75Ω pHEMT MMIC low-noise amplifier utilizing a Darlington configuration with active bias. The active


    Original     		PDF CXE-1089Z 50MHz 1200MHz CXE-1089Z OT-89 Frequency6-678-5570 CXE1089Z MMIC SOT 89 marking CODE 02 CXE-1089 1200MHZ lna CXE1089

    Untitled

    Abstract: No abstract text available
    Text: CXE-1089Z CXE-1089Z 50MHz to 1200MHz 75Ω pHEMT MMIC LNA 50MHz to 1200MHz 75Ω pHEMT MMIC LNA Package: SOT-89 Product Description Features RFMD’s CXE-1089Z is a high performance 75Ω pHEMT MMIC low-noise amplifier utilizing a Darlington configuration with active bias. The active


    Original     		PDF CXE-1089Z 50MHz 1200MHz 1200MHz OT-89 CXE-1089Z 75VDC,

    MARKING CODE ACOM

    Abstract: No abstract text available
    Text: GaAs SP2T 2.7V High Power Switch DC - 3 GHz MASWSS0117 V 1.00 Features n n n n n n Functional Block Diagram Low Voltage Operation: 2.7 V High IP3: +56 dBm Low Insertion Loss: 0.30 dB at 1 GHz High Isolation: 25 dB at 1 GHz Miniature Package: SC70 6L 0.5 micron GaAs PHEMT Process


    Original     		PDF MASWSS0117 MASWSS0117 MARKING CODE ACOM

    TQL500

    Abstract: No abstract text available
    Text: TQL5000 PRELIMINARY DATASHEET WLAN PRODUCTS LNA for 5GHz UNII Band 802.11a Systems Vdd In Out Features 4.9 to 5.9 GHz Frequency Coverage Low Noise Figure Src High Gain Low Current: 8mA Typical @ 3V Product Description: 50-ohm Input and Output Match The TQL5000 is a low noise amplifier designed for 802.11a receive applications


    Original     		PDF TQL5000 TQL5000 50-ohm TQL500

    Untitled

    Abstract: No abstract text available
    Text: TQL5000 PRELIMINARY DATASHEET WLAN PRODUCTS LNA for5 GHz UNII Band 802.11a Systems Vdd In Out Features 4.9 to 5.9 GHz Frequency Coverage Low Noise Figure Src High Gain Low Current: 8mA Typical @ 3V Product Description: 50-ohm Input and Output Match The TQL5000 is a low noise amplifier designed for 802.11a receive applications


    Original     		PDF TQL5000 TQL5000 50-ohm

    CXE-1089Z

    Abstract: CXE1089Z CXE1089 1008LS marking code sirenza
    Text: CXE-1089Z CXE-1089Z 50MHz to 1200MHz 75Ω pHEMT MMIC LNA 50MHz to 1200MHz 75Ω pHEMT MMIC LNA Package: SOT-89 Product Description Features RFMD’s CXE-1089Z is a high performance 75Ω pHEMT MMIC low-noise amplifier utilizing a Darlington configuration with active bias. The active


    Original     		PDF CXE-1089Z 50MHz 1200MHz 1200MHz OT-89 CXE-1089Z EDS-105785 CXE1089Z CXE1089 1008LS marking code sirenza