ATC600S Search Results

transistor SMD P2F

Abstract: FPD4000AF PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE
Contextual Info: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website

Murata grm40

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 6, 5/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage

TO272

Abstract: RM73B2BT A113 GRM42 MWIC930 MWIC930GR1 MWIC930R1 2XE3
Contextual Info: MOTOROLA Order this document by MWIC930/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest High Voltage 26 to

transistor marking code 1325

Abstract: R04003 ims pcb filtronic Solid State
Contextual Info: FPD1000AS Datasheet v2.4 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency

GRM39COG221J050AD

Abstract: A17014 MMA707 MMA707-3030 ATC600S1R8AT250 A55085 Rogers RO4003 grm39 RO40 GRM39COG221J050A
Contextual Info: MMA707 1 Watt InGaP HBT Amplifier FEATURES MMA707 • High Output Power: +31 dBm Typ -3030 • High 3rd Order IP: +50 dBm (Typ) • High Dynamic Range: 97 dB (Typ) 3mm x 3mm square • 3mm square QFN plastic package DESCRIPTION The MMA707-3030 is a Power InGaP HBT device that is designed to provide moderate power

Contextual Info: CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications

Contextual Info: PRELIMINARY CGHV40030 30 W, DC - 6 GHz, 50V, GaN HEMT Cree’s CGHV40030 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band

transistor SMD P1f

Abstract: Transistor p1f MARKING P1F SMD Transistor p1f p1f on FPD1000AS MIL-HDBK-263 T491B105M035AS7015 ON MARKING P1F Filtronic
Contextual Info: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available

b0912

Contextual Info: T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

Contextual Info: MSWSH-100-30 PIN Diode Shunt Switch Element 2 1 1 2 CM22 Heat sink is cathode, epoxy encapsulation Description A broadband, high linearity, high power shunt switch element in a 10 x 4 mm bolt channel metal package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA

AN1977

Abstract: AN1987 GRM40 MHVIC915R2 020C Circuit Diagram Panasonic Model DIM 74
Contextual Info: Freescale Semiconductor Technical Data MHVIC915R2 Rev. 4, 12/2004 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage

CGH40180PP

Abstract: CGH4018 CGH40180PP-TB JESD22 L30 type RF microwave power transistor transistor k 3562 atc600f cgh401 smd transistor s2p
Contextual Info: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high

ATC600S

Abstract: AVX0805 AVX1206 CRF35010
Contextual Info: PRELIMINARY CRF35010F 10 W, 3400-3800 MHz, SiC RF Power MESFET for WiMAX Cree’s CRF35010 is an internally matched silicon carbide SiC RF power metal-semiconductor field-effect transistor (MESFET) designed specifically for 802.16-2004 WiMAX Fixed Access applications. SiC has

R04350B

Abstract: MW7IC2725GNR1 wimax spectrum mask A114 A115 AN1977 AN1987 JESD22 MW7IC2725N MW7IC2725NBR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW7IC2725N Rev. 2, 10/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2725N wideband integrated circuit is designed with on - chip matching that makes it usable from 2300 - 2700 MHz. This multi - stage

Rogers 4350B

Abstract: ATC600S3R9BT250 ATC600S3R9BT250T GPS2020 AN1955 A113 A114 A115 AN1987 C101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW5IC970N Rev. 2, 4/2008 RF LDMOS Wideband 2 - Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance of

GM 950 motorola

Abstract: A113 ECEV1HA100SP GRM40 GRM42 MHVIC915 MHVIC915R2 198MHz
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier Freescale Semiconductor, Inc. The MHVIC915R2 wideband integrated circuit is designed for CDMA and

140-A525-SMD

Abstract: Z1 SMD agere c8 c1 atc600 AGRB03GM JESD22-C101A Sprague Electric SMD MOSFET N Z4 agere c8 vj1206y223kxa
Contextual Info: Preliminary Data Sheet November 2004 AGRB03GM 3 W, 100 MHz—2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRB03GM is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor

Contextual Info: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high

Contextual Info: T2G6003028-FS 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •

CGH40180PP

Abstract: ATC600F cgh40180 Cree Microwave CGH4018 CGH40180PP-TB JESD22 L30 type RF microwave power transistor cgh401 1623
Contextual Info: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high

CGH25120F

Abstract: J137 ATC600S Model CGH25120F ATC600F CGH2512 CGH25120 CGH25120FCGH25120F CGH25120F-TB JESD22
Contextual Info: PRELIMINARY CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree’s CGH25120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz

cgh09120f

Abstract: ATC 600F lk 3058 3019 Transistor LTE AMPLIFIER
Contextual Info: CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree’s CGH09120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE

Contextual Info: PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a

VBT1-S5-S12-SMT

Abstract: atc 1117 0-5 v to 4-20 ma converter
Contextual Info: MSWSE-040-10 PIN Diode Series Switch Element 1 1 2 2 2 0805P Features Description • Supports up to 40 watts power when cold switched • Low Insertion Loss 0.25 dB typical up to 2.7 GHz • Medium Isolation 11 dB typical up to 2.7 GHz A broadband, high linearity, medium power series switch