PHILIPS CNW83 Search Results

Contextual Info: MIE D PHILIPS INTERNATIONAL TllQôSfc» QQ3Q43ti fi BIPHIN T-V /'*3 Philips Semiconductors Product specification Wide body, high isolation optocouplers CNW82/CNW83 FEATURES • W id e body D IL encapsulation, with a pin distance of 1 0 .1 6 m m • M inim um c re e p a g e distance

PHILIPS CNW82

Abstract: philips cnw83 BS415 BS7002 CNW82 CNW83 TRANSISTOR WM 9 transistor wm
Contextual Info: 7110fi5ti OOB O ^ t i ö B I P H I N MIE D PHILIPS INTERNATIONAL 7 - V Philips S em ico n d uctors / - 8 3 P ro du ct s p ecificatio n Wide body, high isolation optocouplers CNW82/CNW83 FEA TUR ES • Wide body DIL encapsulation, with a pin distance of 10.16 mm

CNW83

Abstract: CNW82 phototransistor philips BS415 BS7002 UBB03
Contextual Info: Product specification Philips S em iconductors Wide body, high isolation optocouplers CNW82/CNW83 FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm • Minimum creepage distance 10 mm • High current transfer ratio and low saturation voltage, making

PHILIPS CNW82

Abstract: Quality Technologies optocouplers
Contextual Info: Philips Semiconductors Product specification Wide body, high isolation optocouplers CNW82/CNW83 2UALITY T E C H N O L O G I E S CORP S7E D 7 4 bb ôS l D D D 4 4 7 3 D41 M A T Y FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm « Minimum creepage distance

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40

transistor fn 1016

Contextual Info: P roduct sp e cifica tio n P h ilip s S em icon ducto rs Wide body, high isolation optocouplers CNW82/CNW83 FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm • Minimum creepage distance 10 mm • High current transfer ratio and low saturation voltage, making

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.