PHILIPS DIODE PH 13 Search Results

AV73

Abstract: Js SMD MARKING CODE SOT23 sot23 package marking AV smd DIODE code marking kA SMD IC marking 632 lm 9805
Contextual Info: DISC RETE SE M IC O N D U C TO R S InlEET BAV73 Dual high-speed switching diode in common cathode configuration 1997 May 06 Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors PH ILIPS PHILIPS Philips S e m i c o n d u c t o r s

BAS678

Abstract: BAW62 QDE4331 BAW62 SOT23 MBB111 apx 188
Contextual Info: • Philips Semiconductors N ^ fc.b53T31 AMER 002432b S3T « A P X PH ILIP S /D IS C R FTF L7T - 1\ Product soecificatmn Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It

BUK637-500B

Contextual Info: N APIER PH ILIPS/DISCR ETE bRE D • bbSBTBl 00 3 0 fl 7 D Philips Semiconductors *APX Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode

BUK655-500B

Contextual Info: N AMER PH ILIPS/DISCRETE LTE D • ^53*131 0030680 BBT « A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. FREDFET with fast recovery

BAT85

Abstract: BAT85 sot PHILIPS DIODE philips Schottky diode MARKING 12p
Contextual Info: SbE D 711DÛ2b □ 0 M G 2 4 ti DTÖ • PH I N Product specification Philips Semiconductors T-i I -or BAT85 Schottky barrier diode P H I LI P S international DESCRIPTION SbE D QUICK REFERENCE DATA A Schottky barrier diode with an integrated protection ring against

SUS CIRCUIT breakover device

Contextual Info: PHILIPS INTERNATIONAL SbE D 711DÖ 5b D D 41D74 3?T • ph : BR216 T -II-2 3 DUAL ASYMMETRICAL BREAKOVER DIODE The BR216 is a monolithic dual asymmetrical 65 V breakover diode in the T0-220AB outline. Each half of the device conducts normally in one direction, but in the other direction it acts as a

ECG711

Abstract: ecg block diagram tv receiver schematic diagram PHILIPS tv schematic diagram PHILIPS ECG circuit diagram television internal parts block diagram ECG 5 V zener diode ECG 8 V zener diode Philips ECG "voltage divider" 2SC830
Contextual Info: bbsaiafl 00032Ö3 4 ECG711 W IDE-BAND AM PLIFIER/PH ASE DETECTOR WITH ZEN ER DIODE VOLTAGE REGULATOR PHILIPS E C G INC T '"7* 7- 0- 7- O S For AFC A utom atic Frequency Control] Applications 17E D PHASE DETECTOR TRANSFORMER D ESC R IPTIO N The E C G 711 represents a second genera­

DIODE T25 4 EO

Abstract: DIODE T25 4 bo DIODE T25 4 ko diode,FET BUK627-500B DIODE T25-4-bo
Contextual Info: Philips Components Data sheet status P ro d u c t s p e c ific a tio n date of issue March 1991 PH ILIP S N -channel en han cem en t m ode field-effect pow er transistor in a plastic full pack envelope. F R E D F E T with fast recovery reverse diode, particularly suitable

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BAW156 Low-leakage double diode Product specification Supersedes data of 1996 Mar 13 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification Low-leakage double diode FEATURES BAW156 PINNING

BG521

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SyiIT BAV170 Low-leakage double diode Product specification Supersedes data of 1996 Mar 13 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification Low-leakage double diode FEATURES BAV170 PINNING

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BAV199 Low-leakage double diode Product specification Supersedes data of 1996 Mar 13 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification Low-leakage double diode FEATURES BAV199 PINNING

Contextual Info: 41E D PHILIPS INTERNATIONAL 711002b 0030460 S « P H I N T—4 1 -8 5 Philips Semiconductors Product specification W id e body, high iso lation /h igh -gain o p to co u p iers C N W 138/C N W 1 39 FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm

Contextual Info: JJL DtE D N AMER PHILIPS/DISCRETE ^ 53=131 0Diifli3 t BTV58 SERIES FAST GATE TURN-OFF THYRISTORS ! Thyristors in TO-220AB envelopes capable of being turned both on and off via the gate. They are suitable for use in high-frequency inverters, power supplies, motor control etc. The devices have no

t4185

Abstract: Optocoupler 601 Philips MBB two leg infrared receiver led BS415 BS6301 BS7002
Contextual Info: PHILIPS 4 1E INTERNATIONAL ]> •1 7110B2b 003046a 5 ■ P H IN T—4 1 -8 5 Philips Semiconductors Product specification W ide body, high isolation/high-gain o pto co up lers C N W 1 38 /C N W 139 FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm

diode 0317

Abstract: diode sv 03 7n ALPS 102 diode BYq28 BYQ28 diode sv 0317 saia double diode parallel C117 diode M1
Contextual Info: N AUER P H I LI PS /D IS CR ETE 2SE D • ^53=131 00223^5 S ■ BYQ28 SERIES Jl T - 0 3 - I7 ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forw ard voltage drop, ultra fast reverse recovery times and soft recovery characteristic. They are intended fo r

BUK438-500B

Contextual Info: b^E D N AMER PH ILI PS/ DI SC RE TE • bbS3R31 0D3D4R5 137 H A P X Product Specification Philips Semiconductors BUK438-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: bbS3T31 Philips Semiconductors DD2bfl32 122 B i APX Product specification Low voltage avalanche diode PLVA400A N AUER PHILIPS/DISCRETE FEATUR ES DESCRIPTION • Very low dynamic impedance at low currents: approximately V£o of conventional series The PLVA400A series are silicon

phd55n03

Abstract: transistor smd xc PHB55N03LT PHD55N03LT SMD footprint design PHP55N03LT SC18 T0220AB TRANSISTOR LD25
Contextual Info: Product specification Philips Sem iconductors N-channel TrenchM O S transisto r Logic level FET SYM BOL FEATURES • • • • • PH P55N 03LT, P H B 55N 03LT P H D 55N 03LT QUICK REFERENCE DATA V DSS = 25 V d ’Trench’ technology Very low on-state resistance

PH 21 DIODE

Abstract: DD40 PLVA400A PLVA450A PLVA453A PLVA456A PLVA459A PLVA462A PLVA465A PLVA468A
Contextual Info: SbE D • T l l Q Ô S b D04 D Û7 1 TET ■ PHIN nmitps Semiconductors Product specification T ~ 0 7 ~ i I Low voltage avalanche diode P H I L I PS I N T E R N A T I O N A L PLVA400A SbE D KN FEATURES DESCRIPTION • Very low dynamic impedance at low currents: approximately 1/6o

BUZ308

Abstract: DG14 mc496
Contextual Info: N AMER PH ILI PS/DIS CRET E OLE D PowerMOS transistor ~ • ^53=131 DOmflGfl A ■ BUZ308 T-31-U ‘ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

diode smd marking code 421

Abstract: marking s4 BBY62 Philips diode 16T MARKING DIODE marking S4 04 marking code LA SMD marking s4 diode smd marking code fj BBY62 "Variable Capacitance Diode"
Contextual Info: b'lE T> N AMER PHILIPS/ DISCRETE m ^33*131 Q02fc.453 223 « A P X Philips Sem iconductors Product specification Double variable capacitance diode DESCRIPTION BBY62 Q UICK REFERENCE DATA The BBY62 is a double variable capacitance diode in a m icrom iniature SO T143 envelope. It

LHi 878

Abstract: LHi 878 application A429 PLVA400A PLVA450A PLVA453A PLVA456A PLVA459A PLVA462A PLVA465A
Contextual Info: bbSBTBl Philips Semiconductors GGEL&3 E 122 M APX Product specification Low voltage avalanche diode N AMER PLVA400A P H IL IP S /D IS C R E T E FEATURES DESCRIPTION • Very low dynamic im pedance at low currents: approxim ately Vfeo of conventional series

C2 ph zener diode

Abstract: C 12 PH zener diode ph c5 diode C 15 PH Zener diode C 13 PH Zener diode philips diode PH 13 IP4220CZ6_4 14555 C 11 PH Zener diode
Contextual Info: IP4220CZ6 Dual USB 2.0 integrated ESD protection to IEC 61000-4-2 level 4 Rev. 02 — 8 June 2005 Product data sheet 1. Product profile 1.1 General description The IP4220CZ6 is designed to protect I/O lines sensitive to capacitive load, such as USB 2.0, ethernet, DVI etc. from damage due to ElectroStatic Discharge ESD . It incorporates

n 943 y

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMBD6100 High-speed double diode Product specification Supersedes data of 1996 Sep 18 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode PMBD6100 FEATURES