PHILIPS FERRITE 4B1 CURRENT Search Results

philips ferrite 4b1

Abstract: philips ferrite core 4b1 ferrit* 3b1 philips 4330 Wideband Chokes 103B1 philips ferrite 4b1 current philips 4b1 ferrite philips ferrite bead
Contextual Info: Philips Components Magnetic Products SMD Wide Band Chokes SMD Wide Band Chokes SMD wide-band chokes are an alternative to a SMD bead when more impedance or damping is required. The design of this product is based on our well known range of through-hole wide-band chokes. In these products the conductor wire is

B0239

Abstract: Transistor AND DIODE Equivalent list Transistor Equivalent list LC437 AB-162 transistor
Contextual Info: Philips Semiconductors Preliminary specification NPN microwave power transistor LX1214E500X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb - 25 °C in a common emitter class AB.

j78 transistor

Abstract: j78 transistor equivalent
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very

by239

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LLE16350X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb = 25 °C in a common emitter class AB

Transistor AND DIODE Equivalent list

Abstract: 100A101kp
Contextual Info: Philips Semiconductors Product specification LLE15370X NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency

diode BY239

Abstract: bd239 equivalent BD750 Transistor Equivalent list BD 750 PERMITTIVITY* 2.55
Contextual Info: Philips Sem iconductors Product specification NPN m icrow ave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency

diode BY239

Abstract: bd239 equivalent Transistor Equivalent list MLC446 copper permittivity 43081 BD239 BY239 LXE15450X SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LXE15450X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS W R amplifier. • Interdigitated common-emitter

Transistor AND DIODE Equivalent list

Abstract: Transistor Equivalent list 40j2* diode MLC436 copper permittivity diode BY239 bd239 equivalent philips ferrite 4b1 BD239 BY239
Contextual Info: Philips Semiconductors Preliminary specification NPN microwave power transistor LX1214E500X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to T mb = 25 °C in a common emitter class AB.

12NC philips diode 93

Abstract: transistor j7 Transistor Equivalent list 12NC philips chip resistor BDT91 BY239 LLE15180X SC15 POTENTIOMETER AB 10 K
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEA TU R ES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high V S W R • Interdigitated structure provides high emitter efficiency

j78 transistor equivalent

Abstract: Transistor Equivalent list j160 capacitor philips transistor BD239 equivalent bd239 equivalent J6 transistor BD239 BY239 LLE16045X SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LLE16045X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR amplifier. • Interdigitated structure provides

diode BY239

Abstract: Transistor Equivalent list BY239 Transistor AND DIODE Equivalent list philips ferrite 4b1 erie 1250-003 copper permittivity BDT91 LLE15370X SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEA TU R ES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high V S W R • Interdigitated structure provides high emitter efficiency

m 32 ab transistor

Abstract: mlc444 bd239 equivalent
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated common-emitter structure provides high emitter

philips ferrite material specifications 12nc

Abstract: Class E amplifier BDT91 BY239 LLE18150X Tekelec diode
Contextual Info: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigltated structure provides high emitter efficiency

3C80 ferrite

Abstract: philips 3h1 ferrite material 3c80 material Philips Components, Soft Ferrites Data Handbook M PHILIPS toroidal core 3c90 3h1 ferrite material PHILIPS toroidal core 4a11 philips 3C85 ferrite material PHILIPS toroidal core 3c85 PHILIPS ferrite transformer cores
Contextual Info: MAIN MAIN MENU MENU APPLICATIONS Philips Components Soft ferrites Applications APPLICATIONS INTERFERENCE SUPPRESSION Introduction Unwanted high frequency signals are blocked, wanted signals can pass. With the increasing use of electronic equipment it is of vital importance to suppress interfering

Contextual Info: Philips Semiconductors bb53T31 APX 0 0 3 2 4 CH bb? Product specification Hybrid integrated VHF/UHF w ideband amplifier OM2064 N AMER PHILIPS/DISCRETE PINNING DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit technology on a thin-film substrate, intended for

philips ferrite 4b1

Contextual Info: bb53^31 Philips Sem iconductors 0 0 3 3 4T3 303 ^HAPX pro d u ct specification Hybrid integrated VHF/UHF wideband amplifier OM2063 N AMER PHILIPS/DISCRETE PIN CONFIGURATION PINNING DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit technology

1S1212

Abstract: zo 103 ma MC75
Contextual Info: Philips Semiconductors Product specification Wideband amplifier module OM2Q63 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV systems and as a general purpose amplifier for VHF and UHF

Contextual Info: bb53T3:ii 003250b b27 « A P X OM2070 N AflER PHILIPS/DISCRETE bTE D _ / V _ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate,

OM2070

Abstract: philips if catv amplifier
Contextual Info: Philips Semiconductors Product specification Wideband amplifier module OM2070 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-fiim substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF

philips ferrite 4b1

Abstract: philips ferrite core 4b1 2G2 capacitor philips 4b1 ferrite uhf vhf booster WEA199 vHF amplifier module OM2063 3s4t
Contextual Info: bbS3^31 Philips Semiconductors DG324T2 205 ^HAPX Product specification Hybrid integrated VHF/UHF wideband amplifier OM2063 N AMER PHILIPS/DISCRETE PIN CONFIGURATION PINNING DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit technology

Contextual Info: N AMER PH IL IPS /DI SCRE TE b^E ]> bbS3T31 0033444 SST OM361 APX _ / V _ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide band amplifier in hybrid integrated circuit technique on a thin-film substrate,

philips ferrite core 4b1

Abstract: OM2064 ei ferrite core vHF amplifier DIAGRAM philips ferrite 4b1
Contextual Info: Philips Sem iconductors bb53T31 DDaSHTT bh? Product specification IAPX Hybrid integrated VHF/UHF wideband amplifier OM2064 N AMER PHILIPS/DISCR ETE PINNING DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit technology on a thin-film substrate, intended for

uhf tv booster circuit diagram

Abstract: OM2070 112dBuV philips if catv amplifier
Contextual Info: • IAPX DÜ32SDb b27 OM2070 LTE D N AMER PHILIPS/DISCRETE y HYBRID IN TEG R A TED CIRCUIT VHF/UHF W IDE-BAND A M PLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for use in mast-head booster-amplifiers, as an amplifier in M ATV and CATV systems, and as

Om2061

Contextual Info: 5SE D N AMER PHILIPS/DISCRETE • bbSBTBl DOlfl1!? =1 ■ OM2061 T - 'V \ - 0 ° l- 0 \ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for use in mast-head booster-amplifiers, as an amplifier in MATV systems, and as generalpurpose amplifier for v.h.f. and u.h.f, applications.