PHILIPS RESISTOR 2322 156 Search Results

philips thermistor 2322 642

Abstract: varistor 593 ph LM 2222 2222 031 capacitor philips philips thermistor 2322 640 philips resistor CR25 thermistor 2322 662 98 Philips 3188 capacitor 295 v 595 BC varistor varistor 594 ph 460 V
Contextual Info: Series Index Series Description A A .<' a i Ceram ic Cap 24 HRC02 SM D R es s ror 90 PHÜ5U 'A'irev‘«c jn d R e sistof A02Û4 Resisto? 94 H RCH SM D Res.st.-.r 90 PHQ5V W ii'ew o.tnii R csisiO ’ “9 ACÛ1 W uew ou na Resistor 97 HRC12 SM D R es'sm r

ti 72741

Abstract: MCA81 MCB835 BLF521 URA989 MCB836 MCB831 cis-04 transistor 9567
Contextual Info: Philips Semiconductors ^53^31 DD3DDÛh STD lÂPX Product specification UHF power MOS transistor BLF521 N AMER PHILIPS/DISCRETE FEATURES b^E 3> PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability • Withstands full load mismatch

ac 0624 transistor 17-33

Contextual Info: Philips Semiconductors • b b 5 3 T 31 D D 3QDfib STD H A PX Product specification UHF power MOS transistor BLF521 N AUER PHILIPS/DISCRETE FEATURES b^E 3> ■ PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability

0130 transistor

Abstract: 72741 71005 Integrated Circuit 72741 BLF521 transistor K 1413
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF521 UHF power MOS transistor Product specification November 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF521 PIN CONFIGURATION • High power gain • Easy power control ook, halfpage

Integrated Circuit 72741

Abstract: 100 pf, ATC Chip Capacitor 100A i 72741 philips catalog potentiometer transistor J128 transistor 9567 71005 Philips 2222-030 philips resistor 2322 BLF521
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF521 UHF power MOS transistor Product specification File under Discrete Semiconductors, SC08b November 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF521 PIN CONFIGURATION • High power gain

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D079 BLF521 UHF power MOS transistor Product specification Supersedes data of 1998 Jan 07 2003 Sep 02 Philips Semiconductors Product specification UHF power MOS transistor BLF521 PIN CONFIGURATION FEATURES • High power gain

Integrated Circuit 72741

Abstract: philips resistor 2322 712 2322 141 i 72741 BLF521 philips 2322 662 91 MDA482
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D079 BLF521 UHF power MOS transistor Product specification Supersedes data of 1998 Jan 07 2003 Sep 02 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF521 PIN CONFIGURATION • High power gain

transistor 9567

Abstract: transistor J128 philips catalog potentiometer 72741 MDA480 MOS marking 843 D 843 Power Transistor MDA483 transistor K 1413
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF521 UHF power MOS transistor Product specification November 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF521 PIN CONFIGURATION • High power gain • Easy power control ook, halfpage

BFG134

Abstract: BJE 247
Contextual Info: b t . 5 3 ^3 1 Philips Semiconductors D D 3131S 36 □ M A P X Product specification NPN 7 GHz wideband transistor ^ BFG134 N AUER PHILIPS/DISCRETE b^E D PINNING DESCRIPTION NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for

capacitor 2200 uF

Abstract: philips resistor 2322 156 BLT82 UHF TRANSISTOR 2322 156 philips SMD ic catalogue 200B BC817 TRANSISTOR SMD L3 SMD TRANSISTOR L6
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT82 UHF power transistor Product specification 1996 Feb 05 Philips Semiconductors Product specification UHF power transistor BLT82 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a

2322-712

Abstract: BFG134 LC 3524 philips resistor 2322 763 2222 372 TAG 453 665 800 2222 379 2322 712 fr 253/30 r h a 431 transistor
Contextual Info: Product specification Philips Semiconductors T ^ 3 3 -a s NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION BFG134 VllOBSb □04S20l4 4ôb M P H I N 5bE D PINNING NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for

A1797

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D058 BLF346 VHF power MOS transistor Product specification Supersedes data of 1996 Oct 02 2003 Sep 26 Philips Semiconductors Product specification VHF power MOS transistor BLF346 PINNING - SOT119A FEATURES • High power gain

BFR134

Abstract: 2322 712 2322-712 Philips fr 153 30 philips resistor 2322 763 Transistor 933 2222 372 transistor J 3305 109 transistor 33 db 2222 379
Contextual Info: Product specification Philips Semiconductors BFR134 NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in MATV and microwave amplifiers, such as aerial amplifiers, radar

BLF346

Abstract: capacitor 0.01 k 400 V philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D058 BLF346 VHF power MOS transistor Product specification Supersedes data of 1996 Oct 02 2003 Sep 26 Philips Semiconductors Product specification VHF power MOS transistor BLF346 FEATURES PINNING - SOT119A • High power gain

TRANSISTOR ML6

Abstract: TRANSISTOR ML5 resistor MR25 philips philips MR25 resistor MR25 plate capacitor BFQ270 Miniature Ceramic Plate Capacitor Philips 2222 344 capacitors resistor 240
Contextual Info: Philip^emiconductor^^ • bb53T31 GG3177E E7T ■ A P X ^Productspeclflcatlon NPN 6 GHz wideband transistor ^ BFQ270 N FEATURES h^Z » AUER PHILIPS/DISCRETE PINNING PIN • High power gain • Emitter-ballasting resistors for good thermal stability • Gold metallization ensures

TRANSISTOR ML6

Contextual Info: bb53T31 0031772 E7T * A P X Philips Semiconductors Product specification NPN 6 GHz wideband transistor ^ BFQ270 N FEATURES AUER PHILIPS/DISCRETE h^Z T> PINNING PIN • High power gain • Emitter-ballasting resistors for good thermal stability • Gold metallization ensures

BFR134

Contextual Info: Philips Semiconductors bbS3T31 0 D 3 n i 2 tit7 M A P X Product specification NPN 7 GHz wideband transistor •■■■ ■■■■■■■. DESCRIPTION N BFR134 AnER P H IL IP S /D IS C R E T E B - b lE PINNING NPN transistor in a plastic SOT37

Contextual Info: P hilips Sem iconductors bb53T31 DDETT?! 525 AP X Product specification VHF push-pull power MOS transistor BLF245C N AUER PHILIPS/DISCRETE FEATURES b'lE D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

BFR134

Abstract: 2322-712 2222 372 2322 712 philips tag c2 680 800 2322 712 2222 379 DIN45004B B 1449 transistor transistor A 1264
Contextual Info: Philips Semiconductors • bb53q31 o o a m g tit7 HAPX Product specification NPN 7 GHz wideband transistor ■■■■■■■■■■■■. DESCRIPTION BFR134 N ApiER PHILIPS/DISCRETE biz D m PINNING NPN transistor in a plastic SOT37 envelope. PIN

C23T

Abstract: transistor T43 tag l9 transistor BLF245C
Contextual Info: Philips Semiconductors OOETT?! 525 A P X Product specification VHF push-pull power MOS transistor BLF245C N AMER PHILIPS/DISCRETE FEATURES bTE T> PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

resistor MRs25 philips

Abstract: philips resistor 2322 156 Philips mrs25 IEC-115-1 clause 4.16 Test Ua resistor MRs16 philips MRS25
Contextual Info: Philips Components Product specification Metal film resistors MRS16/25 FEATURES DESCRIPTION • Precision resistors in small outlines A homogeneous film of metal alloy is deposited on a high grade ceramic body. After a helical groove has been cut in the resistive layer, tinned

MEAB29

Abstract: BLF245C philips power CAPACITOR 111 philips power CAPACITOR 157 2322 156 philips
Contextual Info: Philips Semiconductora Product «pacification VHF push-pull power MOS transistor T“3 * H 3 PHILIPS INTERNATIONAL FEATURES SbE J> 711GÛ2L, D D M 3 â n BLF245C 51fl « P H I N PIN CO NFIGURATION • High power gain • Easy power control • Good thermal stability

transistor t A968

Abstract: A1380 transistor
Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D076 BLF542 UHF power MOS transistor Product specification Supersedes data of 1998 Jan 08 2003 Sep 18 Philips Semiconductors Product specification UHF power MOS transistor BLF542 PINNING - SOT171A FEATURES • High power gain

BLF542

Abstract: PHILIPS 4312 amplifier
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLF542 UHF power MOS transistor Product specification Supersedes data of 1998 Jan 08 2003 Sep 18 Philips Semiconductors Product specification UHF power MOS transistor BLF542 FEATURES PINNING - SOT171A • High power gain