PHILIPS TRANSISTOR K1 Search Results

BUK102-50DL

Abstract: T0220AB
Contextual Info: PHILIPS INTERNATIONAL t.SE T> WM 711062b D0b3fll7 SHI • PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK102-50DL Logic level DESCRIPTION Monolithic temperature and overloadprotected logic level power

Contextual Info: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BLV2045N UHF power transistor 1998 Apr 07 Preliminary specification Supersedes data of 1997 Oct 23 File under Discrete Semiconductors, SC19a Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification

transistor k105

Abstract: K1055 K105 mosfet
Contextual Info: PHILIPS INTERN ATIONAL bSE D B 711GÖSb DGb30S4 41e] « P H I N Philips Semiconductors Product Specification PowerMOS transistor BU K105-50L/S Logic level TOPFET_ BUK105-50LP/SP DESCRIPTION Monolithic temperature and overload protected logic level power

Visil

Abstract: 100-P BUK101-50 BUK101-50DL T0220AB BUK101-500L
Contextual Info: b5E D PHILIPS INTERNATIONAL m 7110aEb DQfc.37^1 405 « P H I N Philips Semiconductors Product Specification PowerMOS transistor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected loaic level power MOSFET in a 3 pin plastic

Contextual Info: N APIER PHILIPS/DISCRETE bR E D bbS3R31 QD3042R 4bR • APX Product Specification Philips Semiconductors BUK106-50US BUK106-50LP/SP PowerMOS transistor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic

BFR90A

Abstract: transistor KT 209 M DIN 3967 BFR90A/02 vgb 0124 transistor kt 326 A441 BFQ51 kt 829 transistor KT 209
Contextual Info: Philips Semiconductors bbSB^Bl GD31Ö03 773 APX Product specification NPN 5 GHz wideband transistor ^ BFR90A N AMER PHILIPS/DISCRETE FEATURES b'iE D PINNING • Low noise • Low intermodulation distortion PIN DESCRIPTION 3 Code: BFR90A/02 • High power gain

BUK100-50GS

Abstract: T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbSa^l 0CI3D34b bb7 ■ APX Philips Sem iconductors Product Specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for

BFQ222

Contextual Info: Philips Semiconductors Product specification NPN video transistor BFQ222 APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors. DESCRIPTION NPN silicon transistor encapsulated in a 3-lead plastic SOT32 package.

TP5125

Abstract: BUK101-50GS T0220AB
Contextual Info: PHILIPS INTERNATIONAL hSE ]> • 7110 0 5 b 00b3û0a 5 3 * \ « P H I N Philips Semiconductors Product Specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, Intended as a general purpose switch for

k113

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Logic level TOPFET DESCRIPTION BU K113-50D L QUICK REFERENCE DATA Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as a general purpose switch for

k1085

Abstract: 10850G k108
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK108-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a

Philips transistor k1

Abstract: BUK445-600B
Contextual Info: N AMER PH IL IPS/DISCRETE bTE D • hbS3T31 003D575 2ST « A P X Philips Semiconductors Product Specification PowerMOS transistor PINNING -S O T 1 86 PIN QUICK REFERENCE DATA SYMBOL PARAMETER < o Cl GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

BUK112-50GL

Contextual Info: Product specification Philips Semiconductors PowerMOS transistor BUK112-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a low side

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.

BUK109-50GS

Contextual Info: Product specification Philips Semiconductors PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other applications.

MOSFET 1 KW

Abstract: BUK110-50DL
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor Logic level TOPFET DESCRIPTION BUK110-50DL QUICK REFERENCE DATA Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a

BUK109-50DL

Contextual Info: Product specification Philips Semiconductors PowerMOS transistor Logic level TOPFET DESCRIPTION BUK109-50DL QUICK REFERENCE DATA Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a

BUK109-50DL

Abstract: TRANSISTOR SL 100 BUK10950DL
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor Logic level TOPFET DESCRIPTION BUK109-50DL QUICK REFERENCE DATA Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a

BUK108-50GS

Contextual Info: Product specification Philips Semiconductors PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other applications.

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor TOPFET BUK100-50GS DESCRIPTION Monolithic temperature and overtoad protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.

Transistor Bo 17

Contextual Info: Product Specification Philips Sem iconductors PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power M OSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.

BUK106-50US

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.

0D2N

Abstract: BU2527af BY228
Contextual Info: N AMER PHILIPS/DISCRETE bbS3^31 DQEfibSb bSI b^E D Product specification Philips Semiconductors B U 2527A F S ilic o n d iffu sed p o w er tra n s isto r G E N E R A L D E S C R IP TIO N New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended

k104 transistor

Abstract: K10450 philips lps 100 104-50L
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.