PHOTODETECTORS Search Results

Silicon Detector

Abstract: hybrid charge pinFET 900nm LED
Contextual Info: HYBRID PHOTODETECTORS API’s standard hybrid photodetectors are devices in which both a detector and transimpedance amplifier are mounted together on a common substrate, within a hermetic package. Hybrid devices offer numerous practical and performance benefits,

LN68

Contextual Info: Panasonic Infrared Light Emitting Diodes LN68 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 5 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 950 nm (typ.)

Infrared Emitting Diode

Abstract: LNA2901L
Contextual Info: Panasonic Infrared Light Emitting Diodes LNA2901L GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 9 m W /sr min. • Light emitting spectrum suited for silicon photodetectors • Transparent epoxy resin package

V30K20

Abstract: L440 diode GaAs 1000 nm Infrared Emitting Diode Infrared Emitting Diode LN54 LA440
Contextual Info: Panasonic Infrared Light Emitting Diodes LN54 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 4.6 mW typ. • Light emitting spectrum suited for silicon photodetectors • Infrared light emission close to m onochromatic light :

LNA2801L

Contextual Info: Panasonic Infrared Light Emitting Diodes LNA2801L GaAIAs on GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 6 m W /sr min. • Light emitting spectrum suited for silicon photodetectors

photodetector 850 nm

Abstract: G417603 Ultrafast Photodetectors GmbH G4176-03
Contextual Info: PRELIMINARY DATA ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs G7096 SERIES (InGaAs) Ultrafast response of several tens picosecond FEATURES Ultrafast response G4176-03 : tr , tf = 30 ps (Typ.) G7096-03 : tr = 40 ps (Typ.) Low dark current G4176 series : 100 pA (Ta=25 °C)

Hamamatsu Photomultiplier Socket 14 Pin

Abstract: Hamamatsu photomultiplier M7279
Contextual Info: AMPLIFIER MODULES M7279, M8879 The M7279 and M8879 are non-inverting amplifier modules, specifically designed for photodetectors such as photomultiplier tubes. These amplifier modules work with either a current or voltage input, allowing direct connection to a photomultiplier tube or other photodetectors. The M7279 is comprised of an 8-pin SIP single inline package type hybrid IC

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: Ie = 13.0 mW/sr (min.)  Emitted light spectrum suited for silicon photodetectors

tic 1060

Contextual Info: E G & G/C ANADA/OPTOELEK ID 303Qb]>a DOOGIGI 7^3 « C A N A Photodiode i t e i C30807, C30808, C30809 Optics E ,e c t n o l C30810, C30822, C30831 DATA SHEET V l ’ S " 3 N-Type Silicon p-i-n Photodetectors L-571 C30810 1-568 C30807 C30831 C30808 C30809,

Contextual Info: 1.25Gbps / 2.50Gbps Hybrids InGaAs Photodetectors / Transimpedance Amplifiers APPLICATIONS FEATURES  High  InGaAs Speed Optical Communications ÂGigabit Ethernet  Fibre Channel  ATM  SONET OC-48 / SDH STM-16 Photodetector / Low Noise Transimpedance Amplifier

udt 9dmi

Abstract: spot photodiode UDT Sensors PSD SPOT-2D 801 87 XXX 20 001 SPOT-9D 350-1100nm
Contextual Info: Segmented Photodiodes SPOT Series Position Sensing Detector (PSD) The SPOT Series are common substrate photodetectors segmented into either two (2) or four (4) separate active areas. They are available with either a 0.005" or 0.0004" well defined gap between the adjacent

phototransistor sensitive to red light

Abstract: Infrared Phototransistor color sensitive PHOTO TRANSISTOR LED Reflective Optical Sensor phototransistor visible light VISIBLE LIGHT PHOTOdarlington TRANSISTOR all datasheet phototransistor PHOTO GAP DETECTOR photo transistor application VISIBLE LIGHT PHOTOTRANSISTOR
Contextual Info: General Technical Information J WHAT IS A PHOTOMICROSENSOR? Photomicrosensors are small photodetectors that use light to sense the presence, absence, or position of objects. They are typically constructed as either slot transmissive type or diffuse (reflective) type.

E67349

Contextual Info: TLP2118 TOSHIBA PHOTOCOUPLER GaAℓAs Ired & PHOTO-IC TLP2118 PDP Plasma Display Panel Unit: mm 8 7 6 5 The Toshiba TLP2118 consists of GaAℓAs infrared light emitting diodes and integrated high-gain, high-speed photodetectors. The TLP2118 is housed in the SO8 package.

MRD300

Abstract: MRD3011 MRD750 MRD740 8205 A motorola triac driver MRD150 MRD3051 MRD3054 MRD3056
Contextual Info: OPTOELECTRONICS — EMITTERS/DETECTORS continued Silicon Photodetectors (continued) Phototransistors Light Current VCC H mW/cm2 V(BR)CEO Volts Min Device MRQ150 2.2 20 5.0 40 2.5/4.0 20 1000 173-01 Style 1 MRD310 MRD300 3.5 8.0 20 20 5.0 5.0 50 50 2.0/2.5

Contextual Info: ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs Ultrafast response of several tens picosecond FEATURES Ultrafast response *1 tr , tf = 30 ps (Typ.) Low dark current 100 pA (Ta=25 °C) Large photosensitive area 200 mm *1: Values excluding response time of light source, bias tee, assembly circuit,

Contextual Info: Panasonic Infrared Light Emitting Diodes LN66F G aAs Infrared Light Emitting Diode For light source of remote control systems • Features • High-power output, high-efficiency : Ie = 13.0 mW/sr min. • Light emitting spectrum suited for silicon photodetectors

Contextual Info: Panasonic Infrared Light Emitting Diodes LN69 G aAs Infrared Light Emitting Diode For optical control systems • Features • High-power output, high-efficiency : Ie = 3.5 mW /sr min. • Light emitting spectrum suited for silicon photodetectors : A,P = 940 nm (typ.)

Contextual Info: TSUS4400 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors.

Contextual Info: Panasonic Infrared Light Emitting Diodes LN66A G aAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 9 m W /sr min. • Light em itting spectrum suited for silicon photodetectors • Good radiant pow er output linearity with respect to input current

Contextual Info: Panasonic Infrared Light Emitting Diodes LNA2801L GaAIAs on G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • High-power output, high-efficiency : Ie = 6 mW /sr min. Light emitting spectrum suited for silicon photodetectors

C684

Abstract: C685 CENTRALAB ME7024 C686 ME60 ME61 ME7021 ME7121 ME7124
Contextual Info: Infrared Emitters and Photodetectors Infrared emitters are available from Monsanto in a number of package configurations, sizes, output power ratings, and radiation angles. In addition, silicon phototransistors are available in two sensi­ tivity categories.

ic iR light control

Abstract: VF 100 PANASONIC pulse forward current
Contextual Info: Panasonic Infrared Light Emitting Diodes LN58 G aAs Infrared Light Em itting Diode For optical control systems • Features « H igh-pow er output, high-efficiency : P Q = 3.5 m W typ. « Light em itting spectrum suited for silicon photodetectors t Infrared light em ission close to m onochrom atic light :

Contextual Info: Panasonic Infrared Light Emitting Diodes LN62S G aAs Infrared Light Em itting Diode For optical control systems This product can be combined with various types of silicon photodetectors such as the PN120S to form optical controllers. • Features • High-power output, high-efficiency : PQ = 3.5 mW typ.

Contextual Info: Panasonic Infrared Light Emitting Diodes LN68 G aAs Infrared Light Em itting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 5 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 950 nm (typ.)