PHOTODIODE, NM NEP Search Results
PHOTODIODE, NM NEP Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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OPT101P-JG4 |
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Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 |
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OPT301M |
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Integrated Photodiode and Amplifier In Hermetically Sealed Package 8-TO -55 to 125 |
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OPT101P-J |
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Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 |
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OPT101P |
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Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70 |
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OPT101PG4 |
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Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70 |
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PHOTODIODE, NM NEP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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photodiode InGaAs NEPContextual Info: Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging from 800 nm to 1700 Multiplexed InGaAs PIN Photodiode Array MXA-256-X 800 - 1700 nm nm. The array has 256 elements IN A |
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MXA-256-X MXA-256-X photodiode InGaAs NEP | |
UDT Sensors PSD
Abstract: fast photodiode amplifier UDT photodiode -5 silicon UDT 500 UDT-555D UDT Sensors 555D UDT PIN UDT-020UV Photodiode amplifier ceramic case
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1100nm. UDT Sensors PSD fast photodiode amplifier UDT photodiode -5 silicon UDT 500 UDT-555D UDT Sensors 555D UDT PIN UDT-020UV Photodiode amplifier ceramic case | |
UDT-455
Abstract: UDT photodiode -5 silicon photodiode high responsivity high shunt resistance silicon pin photodiode laser detection UDT Sensors PSD model UDT-455 UDT Sensors
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1100nm. UDT-455 UDT photodiode -5 silicon photodiode high responsivity high shunt resistance silicon pin photodiode laser detection UDT Sensors PSD model UDT-455 UDT Sensors | |
Contextual Info: 2014-01-10 Silicon Photodiode for the Visible Spectral Range Silizium Photodiode für den sichtbaren Spektralbereich Version 1.1 BPW 21 Features: Besondere Merkmale: • Especially suitable for applications from 350 nm to 820 nm • Adapted to human eye sensitivity Vλ |
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D-93055 | |
UDT Pin-6dp
Abstract: UDT UV-005 UDT Pin-6dpI OSD5.8-7Q OSD15-5T OSD5-5T BPX65 amplifier UDT photodiode -5T PIN-020A UDT-455UV
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1100nm. drif-013D, UV-013 15OSD-5-0, OSD15-0, OSD15-5T BPX-65R BPX-65 UV-001, UDT Pin-6dp UDT UV-005 UDT Pin-6dpI OSD5.8-7Q OSD15-5T OSD5-5T BPX65 amplifier UDT photodiode -5T PIN-020A UDT-455UV | |
Q62702P0885
Abstract: BPW21
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D-93055 Q62702P0885 BPW21 | |
Contextual Info: TERNARY PIN PHOTODIODE T018PACKAGE FEATURES Maximum Ratings • InGaAs/lnP-PIN-photodiode • Sensitive Receiver for the 2nd and 3rd Window 1300 nm and 1500 nm • Suitable for Bit Rates up to 1.2 Gbit/* • Low Junction Capacitance • Fast Switching Times |
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T018PACKAGE | |
UDT Sensors PSD
Abstract: UDT-555D OSI-515 UDT-020UV cf 455 e 555D UDT-555UV UDT-020D UDT-055UV UDT-455
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1100nm. UDT-455 UDT-455LN UDT-455UV UDT-455UV/LN OSI-515 OSI-515 UDT Sensors PSD UDT-555D UDT-020UV cf 455 e 555D UDT-555UV UDT-020D UDT-055UV UDT-455 | |
IAG 080
Abstract: photodiode ingaas ghz
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Contextual Info: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited |
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Contextual Info: PHOTODIODE Si photodiode S2684-254 Photodiode with interference filter for monochromatic light 254 nm detection S2684-254 uses an interference filter as its window to provide high sensitivity only to monochromatic light. The spectral response width is as |
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S2684-254 S2684-254 SE-171 KSPD1014E03 | |
Contextual Info: PHOTODIODE Si photodiode S2684-254 Photodiode with interference filter for monochromatic light 254 nm detection S2684-254 uses an interference filter as its window to provide high sensitivity only to monochromatic light. The spectral response width is as |
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S2684-254 S2684-254 SE-171 KSPD1014E03 | |
S2684-254
Abstract: u 741 SE-171
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S2684-254 S2684-254 SE-171 KSPD1014E02 u 741 | |
Contextual Info: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited |
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S2684-560
Abstract: KSPDB0135EB S2684-650 S2684-700 S2684-254 S2684-340 S2684-405 S2684-500 S2684-520
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S2684-254 S2684-254 SE-171 KSPD1014E04 S2684-560 KSPDB0135EB S2684-650 S2684-700 S2684-340 S2684-405 S2684-500 S2684-520 | |
TO-39, UVC
Abstract: uvc photodiode photodiode 011
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EPD-270-0-0 D-12555 TO-39, UVC uvc photodiode photodiode 011 | |
InGaas PIN photodiode, 1550 NEP
Abstract: PerkinElmer 1700 MXA-256-1 MXA-256-2 2561 OPTO photodiode array 1550 nm inGaAs photodiode 1550 array
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MXA-256-1, MXA-256-X InGaas PIN photodiode, 1550 NEP PerkinElmer 1700 MXA-256-1 MXA-256-2 2561 OPTO photodiode array 1550 nm inGaAs photodiode 1550 array | |
UVA photodiode
Abstract: 4W-08 EPD360
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EPD-360-0-0 D-12555 UVA photodiode 4W-08 EPD360 | |
GSO 69Contextual Info: PHOTODIODE Si PIN photodiode S3590-18/-19 Large area Si PIN photodiode for scintillation counting Features Applications l Suitable for coupling with blue scintillator LSO, GSO, etc. l Radiation detection (PET, etc.) l Internal quantum efficiency: 100 % (λ=420 nm) |
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S3590-18/-19 S3590-19: SE-171 KPIN1039E01 GSO 69 | |
Contextual Info: BPV10NF Vishay Semiconductors High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T-1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs λ = 950 nm and GaAlAs (λ = 870 nm) IR |
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BPV10NF BPV10NF 2002/95/EC 2002/96/EC 18-Jul-08 | |
EPD-310-0-0
Abstract: UV 310 nm
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EPD-310-0-0 D-12555 UV 310 nm | |
BPV10NF
Abstract: tshf5
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BPV10NF BPV10NF 08-Apr-05 tshf5 | |
opto 2561
Abstract: 2561 OPTO MXA-256-1 MXA-256-2 photodiode 256 elements PerkinElmer 1700 inGaAs photodiode 1550 array InGaas PIN photodiode, 1550 NEP
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MXA-256-1, MXA-256-X opto 2561 2561 OPTO MXA-256-1 MXA-256-2 photodiode 256 elements PerkinElmer 1700 inGaAs photodiode 1550 array InGaas PIN photodiode, 1550 NEP | |
S3590-08
Abstract: S3590 S3590-09 S3590-18 S3590-19 ceramic scintillator PIN photodiode 420 nm
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S3590-18/-19 S3590-19: SE-171 KPIN1039E01 S3590-08 S3590 S3590-09 S3590-18 S3590-19 ceramic scintillator PIN photodiode 420 nm |