S3590 Search Results

PIN Photodiode

Abstract: S3590-19 Si PIN PHOTODIODE S3590-08
Contextual Info: Si PIN photodiode S3590-08/-09/-18/-19 Large active area Si PIN photodiode Features Applications Sensitivity matching with BGO and CsI TI scintillators: S3590-08/-09 Scintillation detectors Sensitivity matching with blue scintillator (LSO, GSO, etc.): S3590-18/-19

S3590

Abstract: S3590-02
Contextual Info: PHOTODIODE Si PIN photodiode S3590 series Large area sensors for scintillation detection Features Applications l Higher sensitivity and low dark current than conventional type l Sensitivity matching with BGO and CsI TI scintillators l High quantum efficiency: QE=85 % (λ=540 nm)

S3590-02

Abstract: S3590 S3590-01 S3590-05 S3590-06 S3590-08 S3590-09
Contextual Info: PHOTODIODE Si PIN photodiode S3590 series Large area sensors for scintillation detection Features Applications l Higher sensitivity and low dark current than conventional type l Sensitivity matching with BGO and CsI TI scintillators l High quantum efficiency: QE=85 % (λ=540 nm)

GSO 69

Contextual Info: PHOTODIODE Si PIN photodiode S3590-18/-19 Large area Si PIN photodiode for scintillation counting Features Applications l Suitable for coupling with blue scintillator LSO, GSO, etc. l Radiation detection (PET, etc.) l Internal quantum efficiency: 100 % (λ=420 nm)

Contextual Info: Si PIN Photodiodes 4 Type No. Dimensional Outline (P.47)/ Window Material Package Active Area Effective Size Active Area (mm) (mm2) 25 S5106 @/R Ceramic 5X5 S5107 ® /R Chip-carrier 10X10 100 S3590-01 S3590-08 ® /R S3204-08 @/R S3584-08 S3588-08 Photo Sensitivity S Typ. (A/W)

Contextual Info: Large-area Si PIN Photodiodes Type N o. R e m a rk s O u t-*1 line W in d o w *2 M a te ria l A c tiv e *3 A re a S p e c tra l R esponse R ange 300 f i m Wafer Thickness Types 10 x 10 mm active area S3590-08 o 10 x 10 10 x 20 mm active area 10 X 20 S3204-08

S3590-19

Contextual Info: H A M A M A T S U PRELIMINARY DATA Nov, 1998 Si P,N p h o t o d io d e S3590-18 Large area Si PIN photodiode for scintillation counting FEATURES • Suitable for coupling with blue scintillator LSO, GSO, etc. • Internal Quantum Efficiency = 100 % (k=420 nm)

Contextual Info: PHOTODIODE Si PIN photodiode S3590 series Large area sensors for scintillation detection Features Applications l Higher sensitivity and low dark current than conventional type l Sensitivity matching with BGO and CsI TI scintillators l High quantum efficiency: QE=85 % (λ=540 nm)

Contextual Info: Si PINフォトダイオード S3590-08/-09/-18/-19 大面積Si PINフォトダイオード 特長 用途 BGOCsI TI シンチレータに適した感度 (S3590-08/-09) 青色シンチレータ (LSO、GSOなど)に適した感度 (S3590-18/-19) シンチレーション検出

S3590-01

Abstract: S3590-08 S3590-05 scintillator PIN photodiode 420 nm
Contextual Info: PHOTODIODE Si PIN photodiode S3590-01/-05/-08 Large area sensors for scintillation detection Features Applications l Higher sensitivity and low dark current than conventional type l Sensitivity matching with BGO and CsI TI scintillators l High quantum efficiency: QE=85 % (λ=540 nm)

Contextual Info: Si PI N photodiode S3590-08/-09/-18/-19 Large active area Si PI N photodiode Features Applications Sensitivity matching w ith BGO and CsI TI scintillators: S3590-08/ -09 Scintillation detectors Hodoscopes Sensitivity matching w ith blue scintillator ( LSO, GSO, etc.) :

S3590-08

Abstract: S3590-09 PIN photodiode 420 nm
Contextual Info: PHOTODIODE Si PIN photodiode S3590-08/-09 Large area sensors for scintillation detection Features Applications l Higher sensitivity and low dark current than conventional type l Sensitivity matching with BGO and CsI TI scintillators l High quantum efficiency: QE=85 % (λ=540 nm)

PIN photodiode 420 nm

Abstract: S3590-18 S3590-08 S3590-09 S3590-19 GSO 69
Contextual Info: PHOTODIODE Si PIN photodiode S3590-18/-19 Large area Si PIN photodiode for scintillation counting Features Applications l Suitable for coupling with blue scintillator LSO, GSO, etc. l Radiation detection (PET, etc.) l Internal quantum efficiency: 100 % (λ=420 nm)

PIN photodiode 420 nm

Contextual Info: PHOTODIODE Si PIN photodiode S3590-08/-09 Large area sensors for scintillation detection Features Applications l Higher sensitivity and low dark current than conventional type l Sensitivity matching with BGO and CsI TI scintillators l High quantum efficiency: QE=85 % (λ=540 nm)

Contextual Info: PHOTODIODE Si PIN photodiode S3590 series Large area sensors for scintillation detection Features Applications l Higher sensitivity and low dark current than conventional type l Sensitivity matching with BGO and CsI TI scintillators l High quantum efficiency: QE=85 % (λ=540 nm)

S3590-08

Abstract: S3590 S3590-09 S3590-18 S3590-19 ceramic scintillator PIN photodiode 420 nm
Contextual Info: PHOTODIODE Si PIN photodiode S3590-18/-19 Large area Si PIN photodiode for scintillation counting Features Applications l Suitable for coupling with blue scintillator LSO, GSO, etc. l Radiation detection (PET, etc.) l Internal quantum efficiency: 100 % (λ=420 nm)

Contextual Info: Si PIN Photodiodes 4 Type No. Dimensional Outline (P.40-43)/ Window Material*' S1223 S1223 01 S3071 S3072 S1863-01 S3883 S3399 S5106 S5107 S3590 01 S3590 03 S3590 05 S3588 03 *1 W i n d o w m aterial, O /K K /K © /K ® /K ® /K ® /R ® /R Short Photo Sensitivity S (A/W) Typ.

EC2 WS-501

Abstract: WS-1080 ws353 WS-1070 WS-2028 WS-516 WS-3507 WS-3510 WS-3570 WS-20130
Contextual Info: lowprofile Wee SIP LUMPED CONSTANT SIVE DELAY LINE J # # # # # # Analog input and output D elays stable and precise 3-pin Wee S IP package .1 8 0 high Available in delays from 1ns to 2 5 0 n s Precise, fixed delay Available in im pedances of 5 0 , 1 0 0 , 2 0 0 ,

Contextual Info: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077

S3590

Abstract: Spectra Physics A35 diode L2656 noise source diode equivalent circuit diagram of led
Contextual Info: typeset using JPSJ.sty <ver.0.7d> Dependence of an LED Noise on Current Source Impedance Takasi EndoÉ, Eitaro Morimoto1 , Yutaka Hirayoshi1 and Kouich Toyoshima Faculty of Liberal Arts, Saga University, Saga 840 1 Department of Physics, Saga University, Saga 840

S3588-01

Abstract: S3590-01 S2744-01 S2744
Contextual Info: Large-area Si PIN Photodiodes P h o to S e n s itiv ity S T y p . T ype N o. R e m a rk s O u t* ’ lin e W in d o w * 2 M a te r ia l A c tiv e * 3 A re a S p e c tr a l R esponse R ange m m (n m ) Peak S e n sitivity W avelength Ap (n m ) 3 20 to 1060

near IR photodiodes

Abstract: S8745-01 S8558
Contextual Info: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5

C2719

Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
Contextual Info: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for

S2973-01

Abstract: S3590-01 S5573 S6775 S1223 S1223-01 SS077 S3590 S5077 S6968
Contextual Info: Si PIN Photodiodes 1 Dimensional Outline Type No. (P.46)/ Window Material ‘ 1 S5821 Active E f f e c t iv e Package ¡Area Size (mm) s Pe c tra l Response Range Area x ! xp (mm2) (nm) ¡ (nm) Short Circuit Current Photo Sensitivity S (A W ) T Peak Active