PHOTODIODE CHIP SILICON Search Results
PHOTODIODE CHIP SILICON Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GCM188D70E226ME36J | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for Automotive |
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GRM022C71A682KE19L | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose |
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GRM033C81A224ME01D | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose |
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GRM155D70G475ME15J | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose |
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GRM155R61J334KE01J | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose |
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PHOTODIODE CHIP SILICON Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IR photodiode
Abstract: PIN Photodiode vr 1K 700NM photodiode si pin photodiode KDP6004A rise time of photodiode rise time of silicon photodiode 1K VR
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KDP6004A KDP6004A 700nm 1050nm. 1000Lux IR photodiode PIN Photodiode vr 1K photodiode si pin photodiode rise time of photodiode rise time of silicon photodiode 1K VR | |
Contextual Info: VTB Process Photodiode VTB8440H, 8441H PACKAGE DIMENSIONS inch mm CASE 21 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer |
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VTB8440H, 8441H VTB8440H VTB8441H | |
high speed photodiode detector circuit
Abstract: KDP6004A PIN Photodiode Si pin photodiode module Photodiode pin sensitivity silicon pin photodiode rise time of silicon photodiode 700NM IR photodiode ir photodiode wavelength
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KDP6004A KDP6004A 700nm 1050nm. 2856K high speed photodiode detector circuit PIN Photodiode Si pin photodiode module Photodiode pin sensitivity silicon pin photodiode rise time of silicon photodiode IR photodiode ir photodiode wavelength | |
Contextual Info: VTB Process Photodiode VTB9412H, 9413H PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a recessed ceramic package. The chip is coated |
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VTB9412H, 9413H VTB9412H VTB9413H | |
D92-02
Abstract: 8441H d9202 VTB8440H NM40
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VTB8440H, 8441H VTB8440H VTB8441H D92-02 8441H d9202 VTB8440H NM40 | |
9413H
Abstract: rsh8
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VTB9412H, 9413H VTB9412H VTB9413H 9413H rsh8 | |
Photodiode cost sheet
Abstract: die-attach cl 1100 optical fiber detector photoconductive Photodiode submount submount PD submount
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PDB-C116 PDB-C116 100-PDB-C116 Photodiode cost sheet die-attach cl 1100 optical fiber detector photoconductive Photodiode submount submount PD submount | |
Contextual Info: QSE773 Sidelooker Pin Photodiode Features Description • Daylight filter The QSE773 is a plastic silicon pin photodiode in a sidelooker package. ■ Sidelooker package ■ Pin photodiode ■ Wide reception angle, 120° ■ Chip size = 0.107 sq. inches 2.71 sq. mm |
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QSE773 QSE773 | |
QSE773
Abstract: PIN Photodiode IR photodiode Photodiode a C-32V
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QSE773 QSE773 PIN Photodiode IR photodiode Photodiode a C-32V | |
QSE773
Abstract: IR LED direct exposure to photodiode
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QSE773 QSE773 IR LED direct exposure to photodiode | |
IE-120
Abstract: VB0 MARKING
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OCR Scan |
K0M204S IE-120 VB0 MARKING | |
quadrant photodiode
Abstract: PSS33Q-6-C PSS33Q-6-TO5
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PSS33Q-6-C PSS33Q-6-C PSS33Q-6-TO5. quadrant photodiode PSS33Q-6-TO5 | |
S268PContextual Info: S268P Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant |
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S268P S268P D-74025 15-Jul-96 | |
Contextual Info: PCB Chip Type Concave Chip Photodiode with Flat Top TCI Part No. TIRSPD-P2F-3227C Matrial Silicon SMD Photodiode Chip IL Power mW/sr Rise & Fall Time V(BR) R (nS) Min.(V) Ee=mW/cm2 Typ.(uA) Ee=mW/cm2 Max.(nA) Lens Color Water Clear 10/10 32 1.0 6.5 10 www.taitroncomponents.com |
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TIRSPD-P2F-3227C | |
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CD 8403
Abstract: S268P
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S268P D-74025 CD 8403 | |
Contextual Info: OID2 6 n/p photodiode array chip _ General Description Optical device consisting of a 6 chip silicon N/P photodiode array with high uniformity for the output signals. The active area of the silicon die is 2.5 x 1.1 mm2. The high optical responsivity is due to the antireflective |
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030mm | |
Contextual Info: Photodiode arrays with amplifiers S11865-64/-128/-256 S11866-64-02/-128-02 Photodiode arrays combined with signal processing IC The S11865/S11866 series are Si photodiode arrays combined with a signal processing IC chip. X-ray tolerance has been improved compared to the previous products S8865/S8866 series . The signal processing IC chip is formed by CMOS process |
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S11865-64/-128/-256 S11866-64-02/-128-02 S11865/S11866 S8865/S8866 B1201, KMPD1134E04 | |
Contextual Info: PHOTODIODE Si PIN photodiode array S8558 Surface mountable 16-element photodiode array S8558 is a 16-element Si PIN photodiode array in a ceramic chip carrier package suitable for surface mount using solder reflow techniques. S8558 can be used in a wide range of applications including spectrophotometer and position detection. |
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S8558 16-element S8558 SE-171 KMPD1062E01 | |
Contextual Info: PHOTODIODE Si PIN photodiode array S8558 Surface mountable 16-element photodiode array S8558 is a 16-element Si PIN photodiode array in a ceramic chip carrier package suitable for surface mount using solder reflow techniques. S8558 can be used in a wide range of applications including spectrophotometer and position detection. |
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S8558 16-element S8558 SE-171 KMPD1062E01 | |
PhotodiodeContextual Info: OID2 6 n/p photodiode array chip _ General Description Optical device consisting of a 6 chip silicon N/P photodiode array with high uniformity for the output signals. The active area of the silicon die is 2.5 x 1.1 mm2. The high optical responsivity is due to the antireflective |
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030mm Photodiode | |
Contextual Info: Photodiode arrays with ampli¿er S8866-64/-128 Photodiode array combined with signal processing IC The S8866-64 and S8866-128 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge ampli¿er array, clamp circuit and |
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S8866-64/-128 S8866-64 S8866-128 S8866-64G-02, S8866128G-02) S8866-64: S8866-128: SE-171 KMPD1104E02 | |
S8558
Abstract: 16 Photodiode-Array PIN-Photodiode-Array KMPD1062E01 SE-171 Photodiode Array
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S8558 16-element S8558 SE-171 KMPD1062E01 16 Photodiode-Array PIN-Photodiode-Array KMPD1062E01 Photodiode Array | |
Contextual Info: PHOTODIODE Si PIN photodiode array S8558 Surface mountable 16-element photodiode array S8558 is a 16-element Si PIN photodiode array in a ceramic chip carrier package suitable for surface mount using solder reflow techniques. S8558 can be used in a wide range of applications including spectrophotometer and position detection. |
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S8558 16-element S8558 SE-171 KMPD1062E01 | |
S8558
Abstract: 16 Photodiode-Array KMPD1062E01 SE-171
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S8558 16-element S8558 SE-171 KMPD1062E01 16 Photodiode-Array KMPD1062E01 |