PHOTOTRANSISTOR DIODE Search Results

Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT277 PACKAGE DIMENSIONS DESCRIPTION! The MCT277 ¡s a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.

Contextual Info: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT270 PACKAGE DIMENSIONS DESCRIPTIO N The MCT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor. WWW

Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT270 PACKAGE DIMENSION! DESCRIPTION The M CT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.

C1684 r

Abstract: C1684R C1680 C1685 R transistor
Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT274 PACKAGE DIMENSIONS The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN high-gain silicon phototransistor. r ~

Contextual Info: OPTOELECTRONICS I PHOTOTRANSISTOR OPTOCOUPLER MCT271 DESCRIPTION PACKAGE DIMENSIONS db & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.

C1685 transistor

Abstract: transistor c1684 C1681 C2079 KJh transistor TRANSISTOR C1685 C1679 C1680 C1686 MCT271
Contextual Info: [ S PHOTOTRANSISTOR OPTOCOUPLER U OPTOELECTRONICS MCT271 DESCRIPTION PACKAGE DIMENSIONS & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor.

C1681

Abstract: transistor c1684 c1685 NPN C1685 transistor t051
Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT272 PACKAGE DIMENSION! The MCT272 is a phototransistor-type optically coupled Isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor. r ~ 6.86 6.35

C1243

Abstract: C2090
Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS MCT276 PACKAGE IENSIONS The MCT276 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode Is selectively coupled with a high speed NPN silicon phototransistor. r~ 6.86

TIL111

Abstract: C1681
Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOISOLATOR TIL111 DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is

phototransistor

Contextual Info: Sensors Sensor product tables FInfrared Light Emitting Diodes FPhototransistors 150 Sensor product tables Sensors Sensor product tables FPhotointerrupters S Phototransistor output molded type S Phototransistor output (encased type) 151 Sensors S Digital phototransistor output

C1684

Abstract: C1683 C1681 transistor c1684 C1684 transistor transistor c1682 C1296A
Contextual Info: C sö PHOTOTRANSISTOR OPTOCOUPLER DPTDELECîHGNiCS 1 MCT271 PACKAGE DIMENSIONS DESCRIPTION The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor.

Contextual Info: su PHOTOTRANSISTOR OPTOISOLATOR OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is

TIL111

Contextual Info: PHOTOTRANSISTOR OPTOISOLATOF OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type o ptically coupled isolator. An infrared em itting diode m anufactured from specially grow n gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is

c1251

Abstract: C1336 C1240 diode C1109 C1240 C1321 C1322 C1324 MCT276 S555
Contextual Info: DESIGNER SERIES MCT276 Monsanto PHOTOTRANSISTOR OPTOISOLATORS FEATURE SPECIFICATIONS DESCRIPTION • Highest speed discrete phototransistor optoisolator The MCT276 is a phototransistor-type optically coupled isolator. An infrared emitting diode manu­ factured from specially grown gallium arsenide is selec­

PT008-33

Abstract: PT008
Contextual Info: epitex Opto-Device & Custom LED PHOTO-DIODE PT008-33 Lead Pb Free Product RoHS compliant PT008-33 mold type Phototransistor PT008-33 is an epoxy mold type phototransistor featuring high photo current. This phototransistor consists of a chip with 0.6*0.6mm active area mounted

ACPL-8x4

Contextual Info: ACPL-8x4 Multi-Channel Full-Pitch Phototransistor Optocoupler Data Sheet Description Features The ACPL-824 is an AC-input dual channel full-pitch phototransistor optocoupler which contains four light emitting diode optically coupled to two separate phototransistor. It is packaged in a 8-pin DIP package.

PT008-05

Abstract: PT008
Contextual Info: epitex Opto-Device & Custom LED PHOTO-DIODE PT008-05 Lead Pb Free Product RoHS compliant PT008-05 mold type Phototransistor PT008-05 is an epoxy mold type phototransistor featuring high photo current. This phototransistor consists of a chip with 0.6*0.6mm active area mounted

PT010-05

Abstract: lens photodiode phototransistor
Contextual Info: epitex Opto-Device & Custom LED PHOTO-DIODE PT010-05 Lead Pb Free Product RoHS compliant PT010-05 mold type Phototransistor PT010-05 is an epoxy mold type phototransistor featuring high photo current. This phototransistor consists of a chip with 0.8*0.8mm active area mounted

PT010-33

Contextual Info: epitex Opto-Device & Custom LED PHOTO-DIODE PT010-33 Lead Pb Free Product RoHS compliant PT010-33 mold type Phototransistor PT010-33 is an epoxy mold type phototransistor featuring high photo current. This phototransistor consists of a chip with 0.8*0.8mm active area mounted

Contextual Info: epitex Opto-Device & Custom LED PT010-33 PHOTO-DIODE PT010-33 mold type Phototransistor PT010-33 is an epoxy mold type phototransistor featuring high photo current. This phototransistor consists of a chip with 0.8*0.8mm active area mounted on a lead frame with a Φ3 clear epoxy lens.

Contextual Info: epitex Opto-Device & Custom LED PT008-05 PHOTO-DIODE PT008-05 mold type Phototransistor PT008-05 is an epoxy mold type phototransistor featuring high photo current. This phototransistor consists of a chip with 0.6*0.6mm active area mounted on a lead frame with a Φ5 clear epoxy lens.

PC3HU72YIP0B

Abstract: GP2AP002S00F GP1S296HCPSF GP1A173LCS2F GP2AP002A00F GP1UXC4xQS PC815XNNSZ0F GP1A101C2KSF GP2Y0A60SZLF GP1S173LCS2F
Contextual Info: OPTO PHOTOCOUPLER LINEUP • Photocoupler Lineup <Phototransistor output type> Output type Single phototransistor Features Model No. series General purpose, High collector-emitter voltage, etc. Low input current AC input response Darlington phototransistor

PC925LE

Abstract: GP2Y0A60 pc815xnns pc3sd13 GP2Y0A02YK PR36MF51NS PC357NJ0000F
Contextual Info: OPTO • Photocoupler PHOTOCOUPLER LINEUP Lineup <Phototransistor output type> Output type Single phototransistor Features Model No. series General purpose, High collector-emitter voltage Low input current AC input response Darlington phototransistor High sensitivity,

PT200MC0NP

Abstract: phototransistor sharp PT202MR0MP1 GL610T PD60T PT600T
Contextual Info: PHOTOTRANSISTOR Revised version Dec. 10, 2003 Model PT202MR0MP1 Sales & Marketing Group -Electronic Components & Devices Infrared-cutoff, Small Chip Phototransistor Features Outline Dimensions Since the phototransistor has spectral sensitivity characteristics that are close to spectral luminous