C1685 Search Results

Contextual Info: DUAL PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT9001 PACKAGE DIMENSIONS D ESCRIPTIO N The MCT9001 is a tw o channel optocoupler in a standard, end stackable, 8 pin dual-in-line package, This part offers the same packing density as 4 pin optocouplers, while m inim izing co m ponent count and

B25834-C5107-K4

Abstract: B25834-B6105-K1 K4106 B25834-C2106-K4 b25834-c5107 B25834-J6224-M1 B25834-C7336-K4 B25834-B4335-K1 B25834-C6156-K4 B25834-B6225-K1
Contextual Info: MKV-Wechselspannungs-Kondensatoren Bedämpfung, Kommutierung B 25 834 Bedämpfung, Kommutierung Hohe Spannungsfestigkeit Große Spitzenstrombelastbarkeit Für Bedämpfung und Kommutierung im mittleren Frequenzbereich Aufbau ● ● ● ● ● ● ● Selbstheilend

WS80a

Abstract: b25353 siemens SPC 4320 C3227* transistor b25353-k1118-k4 siemens matsushita kondensator B25834-K6106-K9 K4106 V245 datenbuch
Contextual Info: Inhaltsverzeichnis Anwendungen- und Bauformen-Übersicht Seite 5 9 Anwendungen Kondensator-Fragebogen 17 20 Allgemeine technische Angaben 23 Angaben zur Qualität 55 Gleichspannungs-Kondensatoren 63 Wechselspannungs-Kondensatoren 163 Kondensator-Befestigungen

TPS5117

Abstract: Toko 10mm WPC8763L NVIDIA G84 C1740 C2068 stac9228x5 C2073 2 webcam Schematic Diagram 0735A
Contextual Info: A B C D E CPU DC/DC Hawke Intel Discrete Block Diagram CLK GEN 1 ICS9LPRS365 ISL6262A Project code : 91.4W1001.001 PCB P/N : 48.4W101.0SA Revision : 07212-SA Intel Mobile CPU 4 Merom 4M FSB:667 or 800 MHz CRT LCD RGB CRT 17 51 GDDRIII 700MHz LVDS 18 HDMI 16

Contextual Info: Air Feed Mylar Tape Applicator Mini-Mac Applicator Air Feed-Mylar Tape Application Tooling Specification Sheet Order No. 63885-1000 FEATURES Directly adapts to most crimp presses and automatic wire processors Applicator designed to industry-standard mounting and shut height of 135.80mm 5.346"

CF596

Abstract: CF593 CF689HV CF599 1978 Data catalog C-717X cf595 cf 595 CF598 C-685D
Contextual Info: I Ei ¡ M I C R O L J E L E C T R O N IC S 1978 DATA CATALOG GENERAL IN S T R U M E N T C O R P O R A T IO N • M IC R O E L E C T R O N IC S SS.00 C/CF-580 SERIES C/CF-590 SERIES C/CF-680 SERIES GENERAL INFORMATION Display Calculator Circuits FEATURES PIN CONFIGURATION

C1684 r .85 transistor

Abstract: 100JjA optocouplers 4n35 25CC 4N35 4N36 4N37 C1684 transistor transistor c1684
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS 0FT8ELECTB0HICS 4N35 4N36 4N37 DESCRIPTION PACKAGE DIMENSIONS “T h e 4N 35,4N 36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS

Contextual Info: E O TRANSISTOR OUTPUT OPTOCOUPLER OPTOELECTRONICS H11A1 DESCRIPTION PACKAGE DIMENSIONS 1 The H11A1 is a phototransistor-type optically coupled isolator. An infrared em itting diode m anufactured from specially grown gallium arsenide is selectively coupled

Contextual Info: BQ PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS 1 MCT2 PACKAG E DIMENSIONS DESCRIPTION The M C T 2 is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting t t diode. • a SS I Œ 8.89 8.38 “ J FEATURES & APPLICATIONS

C1685 transistor

Abstract: transistor c1684 Cl684 MCT-2201 MCT2200 C1685 C1681 TRANSISTOR C1685 C1285 H127
Contextual Info: GENL INSTR-i OPTOELEK flfl GÉNÉRAL INSTRUMENT DE | 3ÔT015Ô DOOETbT T | ~ VDE APPROVED p h o to tra n sisto r op toco u p le rs DVE PACKAGE DIMENSIONS [& eg] DESCRIPTION Æi r* { 6.86 .270 6.35 (.250) 0.36 (.014) I 0.20 (.008) O WWW T 8.89 (.350) 7.62

transistor c1684

Abstract: CNY17-3 CNY-17-3 c1685
Contextual Info: QUALITY •[TECHNOLOGIES VDE APPROVED p h o t o t r a n s is t o r o p t o c o u p l e r s CNY17-1/1Z CNY17-3/3Z CNY17-2/2Z CNY17-4/4Z PACKAGE DIMENSIONS tft DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor.

C1684 r .85 transistor

Abstract: transistor c1684
Contextual Info: mm QUALITY PHOTOTRANSISTOR OPTOCOUPLER • [ te c h n o lo g ie s MCT275 DESCRIPTION The M CT275 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with a high voltage NPN silicon phototransistor.

RZ-5-C

Abstract: ic1680 C1685 optocoupler 24V
Contextual Info: • a DUAL PHOTOTRANSISTOR OPTOCOUPLER IPTOELECÏRONICS MCT9001 DESCRIPTION PACKAGE DIMENSIONS MM The MCT9001 is a two channel optocoupler in a standard, end stackable, 8 pin dual-in-line package. This part offers the same packing density as 4 pin optocouplers, while minimizing component count and

C1681

Abstract: transistor c1684 c1685 NPN C1685 transistor t051
Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT272 PACKAGE DIMENSION! The MCT272 is a phototransistor-type optically coupled Isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor. r ~ 6.86 6.35

Contextual Info: [£Ö PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONI CS 3 CNY17-1 CNY17-3 CNY17-2 CNY17-4 PACKAGE DIMENSION! DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. WWW High isolation voltage 5300 VAC RMS— 1 m inute

C1680

Abstract: C1685 ci684 C1685 npn optocoupler 1123 C1243 C1679 C1681 C1682 C1683
Contextual Info: £ PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS V y A ^ / V ' v ' V v 'v v ^ // MCT2 DESCRIPTION PACKAGE DIMENSIONS ” t o I $ T ~ J S FEATURES & APPLICATIONS I ® 8.89 _ 8.38 ~ The MCT2 is a NPN silicon planar phototransistor 1optically coupled to a gallium arsenide infrared emitting

GNY17-3

Abstract: CNV17 NPN C1685 c1685 C1685 npn GNY17 C1684 C1685 transistor CNY17-2 C1243
Contextual Info: [«51 PHOTOTRANSISTOR OPTOCOUPLERS OPTOE L E CTRONI CS CNY17-1 CNY17-3 CNY17-2 CNY17-4 PACKAGE DIMENSIONS DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. rib rih rSi FEATURES 1.9 TYP ~ ï— 4.06 J twLTI

C1685 transistor

Abstract: transistor c1684 TRANSISTOR C1685 C1684 transistor C1685 R transistor an c1685 transistor transistor c1684 NPN C2079 optocoupler H11A1 C1682 transistor
Contextual Info: E ö TRANSISTOR OUTPUT OPTOCOUPLER OPTOELECTRONICS H11A1 DESCRIPTION PACKAGE DIMENSIONS •The H11A1 is a phototransistor-type optically coupled isolator. An infrared èmitting diode manufactured from specially grown gallium arsenide is selectively coupled

Contextual Info: 1 1 1 1 1 12345367839 1 1 1 1 ABC9D9E9B9F9F959397939 4912 BC!"#9912$%%8"9 9 1231 1 81589118118515 81 1 !"#18618$1 1 999999971 A58748

B3371

Contextual Info: AT-1992 Hand Crimp Tool Air Powered Crimp Tool Head Krimptite  and VersaKrimp  Application Tooling Specification Sheet Order No. 64007-0100 Engineering No. AT 1992 FEATURES Quick-change tool head for the 19279-0001 AT-200 Tooling kit is interchangeable with other kits in the 64001 and 64003 Series

BB313

Abstract: B1491-1 C11040
Contextual Info: RHT-1992 Hand Crimp Tool Hand Crimp Tool Krimptite  And VersaKrimp  Application Tooling Specification Sheet Order No. 64003-0100 Engineering No. RHT 1992 FEATURES A full cycle ratcheting hand tool ensures complete crimps Long handles for comfortable crimping with reduced crimping force

C1685

Abstract: C1685 transistor transistor c1684 smd TRANSISTOR 27e an c1685 transistor SMD Transistor 1c C1636 C1685 R transistor C1681 C1296A
Contextual Info: ÖUALITY TECHNOLOGIES CORP B7E D QUALITY TECHNOLOGIES • 74bbflSl 0GQ3577 DUAL PHOTOTRANSISTOR OPTOCOUPLERS MCT6 MCT62 MCT61 MCT66 T -4 1 -8 3 DESCRIPTION PACKAGE DIMENSIONS The MCT6X optoisoiators have two channels for high density applications. For four channel applications,

a36 smd transistor

Abstract: transistor smd 4z
Contextual Info: ÖUALITY'TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D 74fe.bfl51 0003431 3 VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS < != > CNY17-1/1Z CN Y17-3/3Z C N Y17-2/2Z CN Y17-4/4Z DESCRIPTION PACKAGE DIMENSIONS The CNY17 series consists of a Gallium Arsenide IRED

Contextual Info: su PHOTOTRANSISTOR OPTOISOLATOR OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is