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    PHOTOTRANSISTOR NPN Search Results

    PHOTOTRANSISTOR NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8513
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    2SC5200
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=230 V / IC=15 A / hFE=55~160 / VCE(sat)=3.0 V / TO-3P(L) Visit Toshiba Electronic Devices & Storage Corporation

    PHOTOTRANSISTOR NPN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT277 PACKAGE DIMENSIONS DESCRIPTION! The MCT277 ¡s a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.


    OCR Scan     		MCT277 E50151 C1686 C1679 C1243 PDF

    Contextual Info: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT270 PACKAGE DIMENSIONS DESCRIPTIO N The MCT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor. WWW


    OCR Scan     		MCT270 MCT270 E90700 ST1603A C1682 C1681 C1683 C1685 C1296A 74bfc PDF

    Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT270 PACKAGE DIMENSION! DESCRIPTION The M CT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.


    OCR Scan     		MCT270 MCT270 2500VAC 3000VAC E50151 C2090 C1681 C1682 C1683 C1684 PDF

    C1684 r

    Abstract: C1684R C1680 C1685 R transistor
    Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT274 PACKAGE DIMENSIONS The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN high-gain silicon phototransistor. r ~


    OCR Scan     		MCT274 MCT274 E50151 C2090 C1681 C1682 C1684 C1683 100/is C1685 C1684 r C1684R C1680 C1685 R transistor PDF

    Contextual Info: OPTOELECTRONICS I PHOTOTRANSISTOR OPTOCOUPLER MCT271 DESCRIPTION PACKAGE DIMENSIONS db & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.


    OCR Scan     		MCT271 MCT271 E90700 C1682 C1681 C1683 C1684 C1296A 74bbfl51 C1294 PDF

    C1685 transistor

    Abstract: transistor c1684 C1681 C2079 KJh transistor TRANSISTOR C1685 C1679 C1680 C1686 MCT271
    Contextual Info: [ S PHOTOTRANSISTOR OPTOCOUPLER U OPTOELECTRONICS MCT271 DESCRIPTION PACKAGE DIMENSIONS & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor.


    OCR Scan     		MCT271 ST1603A C2079 E90700 C1682 C1683 C1684 C1685 C1296A C1685 transistor transistor c1684 C1681 C2079 KJh transistor TRANSISTOR C1685 C1679 C1680 C1686 MCT271 PDF

    C1681

    Abstract: transistor c1684 c1685 NPN C1685 transistor t051
    Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT272 PACKAGE DIMENSION! The MCT272 is a phototransistor-type optically coupled Isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor. r ~ 6.86 6.35


    OCR Scan     		MCT272 MCT272 Ratio--75% time--10 E50151 C2090 C1683 C1684 C1294 C1681 transistor c1684 c1685 NPN C1685 transistor t051 PDF

    C1243

    Abstract: C2090
    Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS MCT276 PACKAGE IENSIONS The MCT276 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode Is selectively coupled with a high speed NPN silicon phototransistor. r~ 6.86


    OCR Scan     		MCT276 MCT276 E5015CAL C1686 C1679 C1680 C1243 C1243 C2090 PDF

    TIL111

    Abstract: C1681
    Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOISOLATOR TIL111 DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is


    OCR Scan     		TIL111 TIL111 E50151 C2079 C1686 C1679 C1680 C1681 C1682 PDF

    Infrared Phototransistor

    Abstract: "infrared phototransistor" all datasheet phototransistor QEE213 QSE213C QSE214C
    Contextual Info: QSE213C/QSE214C Plastic Silicon Infrared Phototransistor Features Description • ■ ■ ■ ■ ■ The QSE213C/QSE214C is a silicon phototransistor encapsulated in a medium angle, infrared transparent, clear thin plastic sidelooker package. NPN Silicon Phototransistor


    Original     		QSE213C/QSE214C QSE213C/QSE214C QEE213 Infrared Phototransistor "infrared phototransistor" all datasheet phototransistor QEE213 QSE213C QSE214C PDF

    C1684

    Abstract: C1683 C1681 transistor c1684 C1684 transistor transistor c1682 C1296A
    Contextual Info: C sö PHOTOTRANSISTOR OPTOCOUPLER DPTDELECîHGNiCS 1 MCT271 PACKAGE DIMENSIONS DESCRIPTION The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor.


    OCR Scan     		MCT271 MCT271 E90700 C1682 C1681 C1683 C1684 C1296A transistor c1684 C1684 transistor transistor c1682 C1296A PDF

    MOC256

    Abstract: MOC256M
    Contextual Info: AC INPUT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS MOC256-M DESCRIPTION The MOC256 is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti-parallel and coupled to a silicon NPN phototransistor detector.


    Original     		MOC256-M MOC256 E90700 MOC256V-M) MOC256M PDF

    Infrared Phototransistor

    Abstract: QEE213 QSE213 QSE214
    Contextual Info: QSE213/QSE214 Plastic Silicon Infrared Phototransistor Features Description • ■ ■ ■ ■ ■ The QSE213/QSE214 is a silicon phototransistor encapsulated in a medium angle, infrared transparent, black thin plastic sidelooker package. NPN Silicon Phototransistor


    Original     		QSE213/QSE214 QSE213/QSE214 QEE213 Infrared Phototransistor QEE213 QSE213 QSE214 PDF

    mil 43

    Abstract: phototransistor datasheet MTLC0124
    Contextual Info: MTLC0124 Phototransistor Chips High Gain Phototransistor Device Structure Base Electrode 2.6mil X 2.6 mil 1. NPN Phototransistor 2. Planar Type Active Area 3. Electrodes: 3.1 N (Collector) : Gold Alloy 3.2 P (Base): Aluminum Alloy 3.3 N (Emitter): Aluminum alloy


    Original     		MTLC0124 mil 43 phototransistor datasheet MTLC0124 PDF

    Contextual Info: su PHOTOTRANSISTOR OPTOISOLATOR OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is


    OCR Scan     		TIL111 TIL111 E90700 ST1603A C2079 74bbfi C1684 C1683 C1685 C1294 PDF

    TIL111

    Contextual Info: PHOTOTRANSISTOR OPTOISOLATOF OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type o ptically coupled isolator. An infrared em itting diode m anufactured from specially grow n gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is


    OCR Scan     		TIL111 TIL111 ST1603A C2079 C1686 C1679 C1680 C1682 C1681 PDF

    MOC256-M

    Abstract: MOC256M
    Contextual Info: AC INPUT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS MOC256-M DESCRIPTION The MOC256-M is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti-parallel and coupled to a silicon NPN phototransistor detector.


    Original     		MOC256-M MOC256-M E90700, MOC256V-M) MOC256M PDF

    phototransistor datasheet

    Abstract: MTLC0140-9
    Contextual Info: MTLC0140-9 Data Sheet Phototransistor Chips High Gain Phototransistor Device Structure Base Electrode 1. NPN Phototransistor 2. Planar Type Active Area 3. Electrodes: 3.1 N Collector : Aluminum alloy (Front Side) Gold Alloy-(Back Side) 3.2 P (Base): Aluminum Alloy


    Original     		MTLC0140-9 phototransistor datasheet MTLC0140-9 PDF

    high resolution phototransistor

    Abstract: phototransistor datasheet OPT6794 Phototransistor
    Contextual Info: Phototransistor OPT6794 DIMENSIONS Unit:mm 5.7 5.0 The OPT6794 is a high-sensitivity NPN silicon phototransistor mounted in a clear plastic package. With lensed package this small phototransistor is designed to optimize the mechanical resolution coupling efficiency, cost and reliability.


    Original     		OPT6794 OPT6794 1000LUX 2000LUX high resolution phototransistor phototransistor datasheet Phototransistor PDF

    WPTS-520D

    Abstract: uv phototransistor C 520D 520D c 5802 transistor
    Contextual Info: Photo Transistor Waitrony Module No.: WPTS-520D 1. General Description: The WPTS-520D is a high sensitivity NPN silicon phototransistor mounted in a 05mm black epoxy resin package. With daylight filter, this phototransistor is only sensitive to infrared rays. This phototransistor


    OCR Scan     		WPTS-520D WPTS-520D uv phototransistor C 520D 520D c 5802 transistor PDF

    MOC256M

    Contextual Info: AC INPUT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS MOC256-M DESCRIPTION The MOC256-M is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti-parallel and coupled to a silicon NPN phototransistor detector.


    Original     		MOC256-M MOC256-M E90700, MOC256V-M) MOC256M PDF

    phototransistor 3 pin

    Abstract: Infrared emitter MOC256-M MOC256M
    Contextual Info: AC INPUT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS MOC256-M DESCRIPTION The MOC256-M is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti-parallel and coupled to a silicon NPN phototransistor detector.


    Original     		MOC256-M MOC256-M E90700, MOC256V-M) phototransistor 3 pin Infrared emitter MOC256M PDF

    PHOTOTRANSISTOR 3 PIN

    Abstract: Infrared emitter infrared emitters and detectors MOC256-M
    Contextual Info: AC INPUT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS MOC256-M DESCRIPTION The MOC256-M is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti-parallel and coupled to a silicon NPN phototransistor detector.


    Original     		MOC256-M MOC256-M E90700, MOC256V-M) PHOTOTRANSISTOR 3 PIN Infrared emitter infrared emitters and detectors PDF

    c 5802 transistor

    Abstract: IAO5 Waitrony IE-2 WPTS-510D Rise time of photo transistor
    Contextual Info: Photo Transistor Waitrony Module No.: WPTS-510D 1. General Description: The WPTS-510D is a high sensitivity NPN silicon phototransistor mounted in a 05mm black epoxy resin package. With daylight filter, this phototransistor is only sensitive to infrared rays. This phototransistor


    OCR Scan     		WPTS-510D WPTS-510D c 5802 transistor IAO5 Waitrony IE-2 Rise time of photo transistor PDF