PHOTOTRANSISTORS Search Results

TLP290-4

Abstract: 11-11F1
Contextual Info: TLP290-4 Photocouplers GaAs Infrared LED & Photo Transistor TLP290-4 1. Applications • Programmable Logic Controllers PLCs • Switching Power Supplies • Simplex/Multiplex Data Transmission 2. General The Toshiba TLP290-4 consists of phototransistors optically coupled to gallium arsenide infrared emitting diodes.

TI-131

Contextual Info: OPTEK TECHNOLOGY INC ObE D | L ^ Ö S ä O 0000154 7 | Op to electron ics- D iv is io n • J i g T R W Electronic Components Group Product Bulletin 5 114 January 1985 _ m - IMPIU Silicon Phototransistors Types OP509, OP509SLD, OP509SLC .030 0.79 NOW RA0ÍUS U K

SFH317-2

Abstract: SFH317-4 SFH501-2 SFH317F-4 sfh309-2 BP103-5 SFH309-3 BPY62-2 SFH317 LPT 80a
Contextual Info: Phototransistors Package Outline Part Typ* H«K Photocurrant Angl« XuSSOmn C ofttdor Emftter Vce-SV » V lreE(niA) SFH320-2 SFH320-3 L fc SFH320F-2 SFH320F-3 16-32 JiA SMTTOP-LED SMTTOPLED, daylight filter ±60” BP103B-4 SFH303-2 SFH303-3 SFH303-4 SFH303F-2

ZRNI53W

Contextual Info: ü SMD Phototransistors 1.6mm x 0.8mm x 1.1mm ZRNI53W Phototransistor Water Clear Lens A b s o lu te M axim um R ating T a =25°C °r 5V Power Dissipation at (or below) 2 5 'C Free Air Temperature. 100mW Storage Temperature R ange. -40; C - +85°C

pnp phototransistor

Abstract: RNI55W
Contextual Info: • Phototransistors 5mm Phototransistor RNI55W W ater Clear Lens A b solution M axlm un Rating Ta=25° Coi ector to -E m itte ' breakdown v o lta g e .30V Em itter-to-C ollector breakdown v o lta g e .5V

PF42

Abstract: SFM309 SFH309P-2 SFM309P
Contextual Info: SFH309P DAYUGHT FILTER SFH309PF SIEMENS SILICON NPN PHOTOTRANSISTOR FE AT U R ES DESCRIPTION • Silicon NPN Phototransistor In Epitaxial Planar Technology The SFH309P/309PF are silicon NPN phototransistors in a standard T1 3 mm plastic package. The SFH309PF has a black daylight filter.

pn268

Contextual Info: Panasonic Darlington Phototransistors PN268- NC Darlington Phototransistor For optical control systems • Features • D a rlin g to n output, high sensitivity • E asy to co m b in e w ith red and in frared lig h t em ittin g diodes • 0 3 p lastic pack ag e

2856K

Abstract: PN208
Contextual Info: Panasonic Darlington Phototransistors PN208 Darlington Phototransistor For optical control systems • Features • D a rlin g to n output, high sensitivity • E asy to co m b in e lig h t em issio n and p h o to d ete ctio n on sam e prin ted c irc u it b oard

lu110

Abstract: PN108CL
Contextual Info: Panasonic Phototransistors PN108CL Silicon NPN Phototransistor U nit : mm For optical control systems • Features • H ig h se n sitiv ity : I C e l = 3-5 m A (m in .) (at L = 5 0 0 lx ) . 3 -00.45+ 0.05 • W id e d irection al se n sitiv ity for e a sy u se

photo darlington sensor

Abstract: CLR2049 CLR2050 CLR2060
Contextual Info: CLR2049 CLR2050 CLR2060 Silicon NPN Planar Epitaxial Darlington Phototransistors G E N E R A L D E S C R I P T I O N — T he C la ire x CLR2049, CLR2050, an d CLR2060 a re three-lead, silicon p lan ar epitaxial D arlington p h o to tra n sisto rs in a flat-w indow , herm etic TO-18

phototransistor visible light

Abstract: panasonic aa
Contextual Info: Panasonic Phototransistors PN163- NC Silicon NPN Phototransistor For optical control systems • Features • H igh sensitivity • F a st resp o n se : tr = 4 (_ls (typ.) • A do p tio n o f v isib le lig h t c u to ff resin • U ltram in iatu re, th in side-view type pack ag e

PN147

Contextual Info: Panasonic Phototransistors PN147 Silicon NPN Phototransistor U n it: mm For optical control systems Type num ber: Emitter mark Green • Features • High sensitivity • W ide spectral responsivity, matched to GaAs LEDs • Fast response : tr, tf = 3 jlls

Transistor 3TY

Abstract: CLED400 CLT4140 CLT4150 CLT4160
Contextual Info: CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit board or socket mounting. All 3 types have guaranteed

CLR5101

Abstract: CLR5101-2 OA70
Contextual Info: CLR5101 ±.005 -1 0 7 7 DIA h*- Silicon NPN Planar Epitaxial Darlington Phototransistors GENERAL DESCRIPTION: The CLR5101 is an ex­ tremely sensitive photodarlington in a hermetically sealed package. The small size allows high density mounting on printing circuit boards. This device is available with a

PD 2028 b

Contextual Info: SELECTION GUIDE PA RI NO. SYSTEM INFRARED EM ITTI MG DIODES : PHOTODIODES : LAMP CATEGORYBRIGHT LED PRODUCT •PHOTOTRANSISTORS • PHOTOREFLECTORS : LIGHT BED-DDDDDï PACKAGE TYPE LAMP CATEGORY: IR: Infrared Emitting Diodes PT: Phototransistors PD: Photodiodes

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNA1801L (PN168) Silicon planar type For optical control systems • Features M Di ain sc te on na tin nc ue e/ d  High sensitivity  Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs

OP644SL

Abstract: OP123 OP223 OP641 OP641SL OP642SL OP643SL
Contextual Info: OPTEK Product Bulletin OP641SL June 1996 NPN Silicon Phototransistors Types OP641SL, OP642SL, OP643SL, OP644SL Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • • • • • Collector-Emitter Voltage . 25 V

PANASONIC MA

Abstract: 2856K PN107 PN108
Contextual Info: Panasonic Phototransistors PN107, PN108 Silicon NPN Phototransistors For optical control system s • F eatures • High sensitivity : I C e l = 5 mA (min.) (at L = 100 lx) • N arrow directional sensitivity for effective use o f light input • Fast response : tr = 5 (_ls (typ.)

PN127

Contextual Info: Panasonic Phototransistors PN127 Silicon NPN Phototransistor U n it: mm For optical control systems Type number : Emitter mark Blue • Features • High sensitivity • G ood collector photo current linearity with respect to optical pow er input • Fast response : tr = 2.5 |^s (typ.)

Scans-00328

Abstract: PN150L
Contextual Info: Panasonic Phototransistors PN150L Silicon NPN Phototransistor U nit : mm For optical control systems • Features • High sensitivity • Wide spectral responsivity, suited for detecting GaAs LEDs • Low dark current • Small size, thin side-view type package

phototransistor

Abstract: PN110 2856K
Contextual Info: Panasonic Phototransistors PN 110 Silicon NPN Phototransistor For optical control systems • Features • H igh sensitivity • W ide spectral resp o n siv ity • T h e m ost suitable d e te cto r fo r G aA s L E D s • F a st re sp o n se : tr, tf = 3

100S

Abstract: PN106 KS2500
Contextual Info: Panasonic Phototransistors PN106 Silicon NPN Phototransistor For optical control systems • Features • H igh sensitivity • F a st resp o n se : tr = 3.5 |^s typ. • N arro w directional sensitivity fo r effective use o f lig h t input • S ignal m ixing c ap ab ility using ba se pin

PN101

Contextual Info: Panasonic Phototransistors PN101 Silicon NPN Phototransistor For optical control systems • Features • High sensitivity • W ide spectral responsivity, suited for detecting GaAs L E D ’s • Low dark current : I C e o = 5 nA typ. • Fast response : tr, tf = 3 |xs (typ.)

OPB50

Abstract: OP550SLA OP550 OP550SLB OP550SLC OP550SLD 21584
Contextual Info: OPTEK TECHNOLOGY INC ObE D | fc.7TÖS6D OOOGlbO 2 | Optoelectronics Division T R W Electronic Components Group f f f f f Product Bulletin 5119 January 1965 NPN Silicon Phototransistors Types OP55Q, 0P550SLD, OP55QSLC, QP550SLB, OP55QSLA 500 12.7 m r I "