PJ 257 Search Results
PJ 257 Price and Stock
Xiamen Hongfa Electroacoustic Co.,Ltd. HFE80V-20C/450-12-HTPJ(257)HFE80V-20C/450-12-HTPJ(257) by HONGFA. |
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HFE80V-20C/450-12-HTPJ(257) | 160 |
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Xiamen Hongfa Electroacoustic Co.,Ltd. HFE80V-20C/450-48-HTPJ(257)HFE80V-20C/450-48-HTPJ(257) by HONGFA. |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HFE80V-20C/450-48-HTPJ(257) | 160 |
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PJ 257 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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16-LINE TO 4-LINE PRIORITY ENCODERS
Abstract: 74 series logic gates Flip flops "J-K Flip flops" J-K Flip flops NAND Gates HD74 Synchronous 8-Bit Binary Counters HD74S synchronous binary counter with latch
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HD74/HD74S HD74S HD74Series 16-bit DP-14 DP-16 DP-20 16-LINE TO 4-LINE PRIORITY ENCODERS 74 series logic gates Flip flops "J-K Flip flops" J-K Flip flops NAND Gates HD74 Synchronous 8-Bit Binary Counters synchronous binary counter with latch | |
ATF-25735
Abstract: pj 68 S2a Hewlett-Packard MICRO-X 5965-8710E transistor 81 110 w 85
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ATF-25735 ATF-25735 44475A4 5965-8710E pj 68 S2a Hewlett-Packard MICRO-X 5965-8710E transistor 81 110 w 85 | |
Contextual Info: Whpt H E W L E T T mirÍM P A C K A R D 0 .5 -1 0 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25735 Features • High O utput Power: 19.0 Bm Typical Pj dB at 4 GHz • High Gain: 12.5 dB Typical Gj dB at 4 GHz • Low N oise Figure: 1.2 dB Typical at 4 GHz |
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ATF-25735 ATF-25735 5965-8710E | |
NEC C959
Abstract: c959 2SA733 TEM-516 transistor tt 2170 TRANSISTOR GF 507 2sc945-c transistor 2sa733 PA33 M 9619
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2SA733 o2SC9451 SC-43B T108-01 SI-Tg17# NEC C959 c959 2SA733 TEM-516 transistor tt 2170 TRANSISTOR GF 507 2sc945-c transistor 2sa733 PA33 M 9619 | |
pj 72 diode
Abstract: pj 49 diode pj 44 diode ic 7pin dip PWM Converter pj 89 diode 9v 200 ohm relay P248L VP0808 vp1550 pj 85 lv
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VP1550 VP2106 VP2110 VP2206 VP2450 VP3203 TC2320 -200V pj 72 diode pj 49 diode pj 44 diode ic 7pin dip PWM Converter pj 89 diode 9v 200 ohm relay P248L VP0808 pj 85 lv | |
Contextual Info: STRH12P10 Rad-Hard 100 V, 12 A P-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100V 12 A 265 mΩ 40 nC • Fast switching • 100% avalanche tested 1 2 • Hermetic package 3 • 100 krad TID • SEE radiation hardened TO-257AA |
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STRH12P10 O-257AA DocID022337 | |
STRH12P10GYGContextual Info: STRH12P10 Rad-Hard 100 V, 12 A P-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100V 12 A 265 mΩ 40 nC • Fast switching • 100% avalanche tested • Hermetic package • 100 krad TID • SEE radiation hardened TO-257AA Applications |
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STRH12P10 O-257AA DocID022337 STRH12P10GYG | |
DIGITAL ELECTRONICS CORP
Abstract: p6-33 H 209 B1 PTTC6
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P6-33 P5-34 P4-35 P3-25 1000ns MIL-STD-883 DIGITAL ELECTRONICS CORP H 209 B1 PTTC6 | |
74297
Abstract: 70306 024069 k275 151007 03389 1297 4701 25413 4862-3 130517-0
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860181
Abstract: 12697 27149 015-0076 164 20 8525 7476 ttl 9424 9826 320 pin diagram of 7476 2594
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nas1805
Abstract: nas1291c3m nas1291 nas1791 NAS1792 NAS1804 TORQUE-TENSION MANUAL No. 8804 eslok NAS1474 NASM45938
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Contextual Info: O K I semiconductor MSM65524/65P524 OKI ORIGINAL HIGH PERFORMANCE CMOS 8 BIT SINGLE CHIP MICROCONTROLLER GENERAL DESCRIPTION M SM 65524 is a high-performance 8-bit single-chip controller that employs O ki's original nX-8/50 CPU core. W ith a m inimum instruction execution time of 400 ns 10M H z dock , the M SM 6 55 2 4 is |
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MSM65524/65P524 nX-8/50 MSM65P524, 16-bit | |
MSP430F5326
Abstract: MSP430 data loggers
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MSP430F5326-DIE SLAS890 16-Bit MSP430F5326 MSP430 data loggers | |
IM1031
Abstract: pt 4115 BJ 027
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13-Oct-06 IM1031 pt 4115 BJ 027 | |
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irf 8250Contextual Info: IM Vishay Dale Inductors, Commercial, Molded, Axial Leaded FEATURES • Wide inductance range in small package • Flame retardant coating • Precision performance, excellent reliability, study construction • Epoxy molded construction provides superior |
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MIL-STD-202, IM-10 2002/95/EC 18-Jul-08 irf 8250 | |
Contextual Info: I 1/ V R R I 15 FRS230D, FRS230R, S E M I C O N D U C T O R 7A, 200V, 0.515 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 7A, 200V, RDS on = 0.515£2 TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma |
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FRS230D, FRS230R, O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD 30UIS SS30PH0T0 | |
shbb
Abstract: T11G
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FRS140 2N7284D, 2N7284R 2N7284H O-257AA 100KRAD 300KRAD 10OOKRAD 3000KRAD O-257AA shbb T11G | |
block diagram of TMS320C5X starter kit
Abstract: PZ S-PQFP-G100 Package footprint BSDL tms320 abstract for wireless technology in ieee format instruction set of TMS320C5x TMS320C5x dsp block diagram TMS320C5X starter kit XDS510 jtag ide tms320c50 TMS320LBC53 TMS320LBC51
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TMS320C5x, TMS320LC5x SPRS030A 16-Bit TMS320C5x 50-ns block diagram of TMS320C5X starter kit PZ S-PQFP-G100 Package footprint BSDL tms320 abstract for wireless technology in ieee format instruction set of TMS320C5x TMS320C5x dsp block diagram TMS320C5X starter kit XDS510 jtag ide tms320c50 TMS320LBC53 TMS320LBC51 | |
smd transistor pk1
Abstract: Philips sbc 345 Temperature Control switching regulator ic LM 5304 pj12 diode ph10 led display 16 x 32 ic 5304 smd 8 pin pj14 diode ITT 7346 PJ8 diode MPC5516
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MPC5510EVB 144QFP, 176QFP 208BGA MPC5516EVB C0805COG500-102JNE C0603C100F5GAC 293D106X9010A2TE3 C0603C0G500-330JNE smd transistor pk1 Philips sbc 345 Temperature Control switching regulator ic LM 5304 pj12 diode ph10 led display 16 x 32 ic 5304 smd 8 pin pj14 diode ITT 7346 PJ8 diode MPC5516 | |
Contextual Info: L T M M -1 08-01 - G - D - R A % L T M M -1 10-01 -G ~ D L T M M -1 15-01 -1 ~D W m s s m m 4 8 «p ftilig ilp | il * Pm and body options for soctref or IDC cable mating • S P E C IF IC A T IO N S Materials: Insulator Material: W Black Liquid Crystal Polymer |
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125-C 1-800-SAMTEC-9: | |
female PCB connector 9pin d-sub
Abstract: 9pin d type Female PCB connector D-Sub 25-pin male Connector female PCB connector 15pin D-Sub 15 pin connector dimension D-Sub 9-pin male pcb Connector D-Sub 25pin dimension female PCB connector 25pin d-sub male PCB connector 9pin d-sub D-Sub 25-pin Connector
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Contextual Info: c D -ifn n c c R ic c HIGH-PERFORMANCE 48-MACROCELL ONE-TIME PROGRAMMABLE LOGIC DEVICES S R E S 003-D 3880, NOVEMBER 1991 FN PACKAGE User-Configurable LSI Circuit Capable of Implementing 2100 Equivalent Gates of Conventional and Custom Logic TOP VIEW High-Performance CMOS Process Allows: |
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48-MACROCELL 003-D SRES003-D3880. | |
subwoofer preamp diagram
Abstract: AUDIOMAX AMPLIFIERS GS -L 0.47uF Capacitor capacitor 2200uf 25v GS -L 0.1uF Capacitor BLM41P102SGPT L100 LN35 LX1722CDB Si7501DN
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LX1722SM 973932k 96434k subwoofer preamp diagram AUDIOMAX AMPLIFIERS GS -L 0.47uF Capacitor capacitor 2200uf 25v GS -L 0.1uF Capacitor BLM41P102SGPT L100 LN35 LX1722CDB Si7501DN | |
PLCC-6 5050
Abstract: P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG
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SA146RS PLCC-6 5050 P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG |