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Catalog Datasheet	Type	Document Tags	PDF
B24N10 Abstract: YMB 06 Contextual Info: PJB24N10 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Designed for AC Adapter, High-Frequency Switch	Original	PJB24N10 2002/95/EC O-263 MIL-STD-750 B24N10 O-263 800PCS/REEL 2010-REV B24N10 YMB 06	PDF
Contextual Info: PJB24N10 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Designed for AC Adapter, High-Frequency Switch	Original	PJB24N10 2002/95/EC O-263 MIL-STD-750 B24N10 O-263 800PCS/REEL 983A5F 2010-REV	PDF

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B24N10

Abstract: YMB 06
Contextual Info: PJB24N10 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Designed for AC Adapter, High-Frequency Switch

Original

PJB24N10 2002/95/EC O-263 MIL-STD-750 B24N10 O-263 800PCS/REEL 2010-REV B24N10 YMB 06

PDF

Contextual Info: PJB24N10 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Designed for AC Adapter, High-Frequency Switch

Original

PJB24N10 2002/95/EC O-263 MIL-STD-750 B24N10 O-263 800PCS/REEL 983A5F 2010-REV

PDF