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    PK TRANSISTOR NPN SMD Search Results

    PK TRANSISTOR NPN SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PK TRANSISTOR NPN SMD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n3055 motorola

    Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
    Text: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,


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    PDF 1PHX11122C 2n3055 motorola tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046

    tip122 tip127 audio amp schematic

    Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
    Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.


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    PDF DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier

    1N5825

    Abstract: 369D MJD243 MJD243T4 MJD253 MJD253T4 MSD6100 SMD310
    Text: MJD243 NPN , MJD253 (PNP) Preferred Device Complementary Silicon Plastic Power Transistor DPAK for Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. • Collector−Emitter Sustaining Voltage −


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    PDF MJD243 MJD253 MJD243/D 1N5825 369D MJD243 MJD243T4 MJD253 MJD253T4 MSD6100 SMD310

    MJD253

    Abstract: 1N5825 MJD243 MJD243T4 MJD253T4 MSD6100 SMD310 marking MJD
    Text: MJD243 NPN , MJD253 (PNP) MJD243 is a Preferred Device Complementary Silicon Plastic Power Transistor DPAK for Surface Mount Applications http://onsemi.com . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage –


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    PDF MJD243 MJD253 MJD243 r14525 MJD243/D MJD253 1N5825 MJD243T4 MJD253T4 MSD6100 SMD310 marking MJD

    marking MJD

    Abstract: 1N5825 MJD243 MJD243T4 MJD253 MJD253T4 MSD6100 SMD310 mjd2
    Text: MJD243 NPN , MJD253 (PNP) Preferred Device Complementary Silicon Plastic Power Transistor DPAK for Surface Mount Applications http://onsemi.com . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage –


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    PDF MJD243 MJD253 r14525 MJD243/D marking MJD 1N5825 MJD243 MJD243T4 MJD253 MJD253T4 MSD6100 SMD310 mjd2

    t1p42

    Abstract: TIP41 SOT323
    Text: MJB41C NPN , MJB42C (PNP) Preferred Devices Complementary Silicon Plastic Power Transistors D2PAK for Surface Mount http://onsemi.com • Lead Formed for Surface Mount Applications in Plastic Sleeves • • (No Suffix) Lead Formed Version in 16 mm Tape & Reel (“T4” Suffix)


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    PDF MJB41C MJB42C TIP41 T1P42 TIP41 SOT323

    MJB44H11

    Abstract: MJB44H11T4 MJB45H11 MJB45H11T4 SMD310
    Text: MJB44H11 NPN , MJB45H11 (PNP) Preferred Devices Complementary Power Transistors D2PAK for Surface Mount http://onsemi.com . . . for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators,


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    PDF MJB44H11 MJB45H11 r14525 MJB44H11/D MJB44H11 MJB44H11T4 MJB45H11 MJB45H11T4 SMD310

    TIP41 SOT323

    Abstract: TIP41 SOT23 1N5825 MJB41C MJB41CT4 MJB42C MJB42CT4 MSD6100 T1P42 TIP41
    Text: MJB41C NPN , MJB42C (PNP) Preferred Devices Complementary Silicon Plastic Power Transistors D2PAK for Surface Mount http://onsemi.com • Lead Formed for Surface Mount Applications in Plastic Sleeves • • (No Suffix) Lead Formed Version in 16 mm Tape & Reel (“T4” Suffix)


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    PDF MJB41C MJB42C TIP41 T1P42 r14525 MJB41C/D TIP41 SOT323 TIP41 SOT23 1N5825 MJB41C MJB41CT4 MJB42C MJB42CT4 MSD6100

    CNX82A

    Abstract: CNX82AX E91231
    Text: CNX82A CNX82AX NON-BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT l l l APPROVALS UL recognised, File No. E91231 Package System " GG " Dimensions in mm 2.54 'X' SPECIFICATION APPROVALS VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802


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    PDF CNX82A CNX82AX E91231 EN60950 P01102464 CNX82A DB92286m-AAS/A3 CNX82AX E91231

    mje340 equivalent

    Abstract: 2sd358 equivalent bd139 equivalent transistor BD139 fall time BU108 2SA794 equivalent transistor mj11028 equivalent MJ15025* equivalent NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 c 3198 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ16010  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for


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    PDF MJ16010 MJ16012 MJW16012 MJW16010 Loa32 TIP73B TIP74 TIP74A TIP74B mje340 equivalent 2sd358 equivalent bd139 equivalent transistor BD139 fall time BU108 2SA794 equivalent transistor mj11028 equivalent MJ15025* equivalent NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 c 3198 transistor

    2N3741

    Abstract: 2N3741SMD 2N3766SMD
    Text: SEME 2N3741 SMD LAB MECHANICAL DATA Dimensions in mm MEDIUM POWER PNP SILICON POWER TRANSISTOR 3 .6 0 0 .1 4 2 M a x . • LOW SATURATION VOLTAGE • HIGH GAIN 3 FEATURES 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1


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    PDF 2N3741 100KHz 2N3741SMD 2N3766SMD

    Untitled

    Abstract: No abstract text available
    Text: SEME 2N3741 SMD LAB MECHANICAL DATA Dimensions in mm MEDIUM POWER PNP SILICON POWER TRANSISTOR 3 .6 0 0 .1 4 2 M a x . • LOW SATURATION VOLTAGE • HIGH GAIN 3 FEATURES 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1


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    PDF 2N3741 100KHz

    MJ802 EQUIVALENT

    Abstract: bd139 equivalent TIP41C EQUIVALENT MJE3055T equivalent mje521 equivalent equivalent buv18a MJL21193 equivalent 2sd880 equivalent mje340 equivalent MJE350 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6836  Data Sheet Switchmode Series Ultra-Fast NPN Silicon Power Transistors Designer's These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for


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    PDF 2N6836 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 MJ802 EQUIVALENT bd139 equivalent TIP41C EQUIVALENT MJE3055T equivalent mje521 equivalent equivalent buv18a MJL21193 equivalent 2sd880 equivalent mje340 equivalent MJE350 equivalent

    TEA1705

    Abstract: TEA1720
    Text: AN11401 TEA1720/TEA1705 5 W to 12.5 W power supply/USB charger Rev. 1 — 5 December 2013 Application note Document information Info Content Keywords ultra low standby power, constant output voltage, constant output current, primary sensing, Integrated emitter switch, low-cost NPN high-voltage


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    PDF AN11401 TEA1720/TEA1705 TEA1720 TEA1705

    2A 80v complementary transistor

    Abstract: No abstract text available
    Text: SEME 2N3741 SMD LAB MECHANICAL DATA Dimensions in mm MEDIUM POWER PNP SILICON POWER TRANSISTOR 3 .6 0 0 .1 4 2 M a x . • LOW SATURATION VOLTAGE • HIGH GAIN 3 FEATURES 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1


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    PDF 2N3741 2N3741SMD" 2N3741SMD O276AB) 2A 80v complementary transistor

    Untitled

    Abstract: No abstract text available
    Text: HIGH POWER SILICON NPN TRANSISTOR BUL57AN2A, BUL57AN2B • High Voltage, High Current • Hermetic Ceramic Surface Mount Package • Ideally Suited For Electronic Ballast, Switch Mode Power Supply Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


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    PDF BUL57AN2A, BUL57AN2B BUL57AN2B-JQRS

    ISP817

    Abstract: No abstract text available
    Text: ISP817X, ISP817 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS z z APPROVALS UL recognised, File No. E91231 under Package System 'EE' 'X' SPECIFICATION APPROVALS VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802


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    PDF ISP817X, ISP817 E91231 ISP817X ISP817 DB92275

    electron cvp

    Abstract: No abstract text available
    Text: HIGH POWER SILICON NPN TRANSISTOR BUL57AN2A, BUL57AN2B • High Voltage, High Current • Hermetic Ceramic Surface Mount Package • Ideally Suited For Electronic Ballast, Switch Mode Power Supply Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


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    PDF BUL57AN2A, BUL57AN2B BUL57AN2B-JQRS electron cvp

    smd transistor 12W 13

    Abstract: transistor SMD 12W MOSFET smd transistor 12W 3 pins transistor SMD 12W D13005 E D13005 D13005 transistor smd transistor 12W 55
    Text: ACT365 Rev 2, 10-Jan-13 High Performance ActivePSRTM Primary Switching Regulator The ACT365 ActivePSRTM is optimized for high performance, cost-sensitive applications, and utilizes Active-Semi’s proprietary primary-side feedback architecture to provide accurate constant


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    PDF ACT365 10-Jan-13 ACT365 150mW smd transistor 12W 13 transistor SMD 12W MOSFET smd transistor 12W 3 pins transistor SMD 12W D13005 E D13005 D13005 transistor smd transistor 12W 55

    marking 513 SOD-323

    Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


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    PDF DL126/D Nov-2001 r14525 DL126/D marking 513 SOD-323 transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256

    CBF493S

    Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


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    PDF DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ

    TRANSISTOR AH-16

    Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


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    PDF DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: bd139 equivalent 2SC495 mje13007 equivalent bd139 equivalent transistor 2sd880 equivalent 2N3055 equivalent transistor NUMBER pin configuration NPN transistor tip41c BDX37 equivalent MJE350 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJH16006A  Data Sheet Designer's NPN Silicon Power Transistor 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for


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    PDF Satur32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 TRANSISTOR REPLACEMENT GUIDE bd139 equivalent 2SC495 mje13007 equivalent bd139 equivalent transistor 2sd880 equivalent 2N3055 equivalent transistor NUMBER pin configuration NPN transistor tip41c BDX37 equivalent MJE350 equivalent

    MJ3001 equivalent

    Abstract: 2N3055 equivalent transistor NUMBER Motorola transistors MJE3055 TO 127 BD907 equivalent transistor equivalent book 2sc2238 Drive IC 2SC3346 TRANSISTOR REPLACEMENT GUIDE mje340 equivalent mje521 equivalent MJE350 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJW16010A*  Data Sheet Designer's NPN Silicon Power Transistors *Motorola Preferred Device 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for


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    PDF Satur32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 MJ3001 equivalent 2N3055 equivalent transistor NUMBER Motorola transistors MJE3055 TO 127 BD907 equivalent transistor equivalent book 2sc2238 Drive IC 2SC3346 TRANSISTOR REPLACEMENT GUIDE mje340 equivalent mje521 equivalent MJE350 equivalent