PN SMD TRANSISTOR Search Results

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBTH10 PI N CONFIGURATI ON N PN SOT-23 Formed SMD Package 1 = BASE 2 = EM ITTER 3 = COLLECTOR 3 1 2 Marking Code = 3E VHF/UHF Transistor

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846, BC847, BC848 PIN CON FI GURATI ON N PN 1 = BASE SOT-23 Formed SMD Package 2 = EMITTER 3 = COLLECTOR 3 For Lead Free Parts, Device Part #

BDS78

Contextual Info: Philips Components Data sheet status P r o d u c t s p e c ific a t io n date of issue A p ril 1991 BDS202/204/78 PN P silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN 1 2 3 4 PNP silicon epitaxial base transistors in a miniature SMD envelope

TLP521-1BL-SW

Abstract: Isocom Components E72HA2.2B-L
Contextual Info: ISOCOM COMPONENTS TLP521-1BL-SW, TLP521-2BL-SW, TLP521-4BL-SW DRAFT DESCRIPTION The TLP521-1BL-SW, TLP521-2BL-SW and TLP521-4BL-SW series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in a space efficient Dual In

TLP621 smd

Contextual Info: ISOCOM COMPONENTS TLP621-1BL-SW, TLP621-2BL-SW, TLP621-4BL-SW DRAFT DESCRIPTION The TLP621-1BL-SW, TLP621-2BL-SW and TLP621-4BL-SW series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in a space efficient Dual In

Contextual Info: ISOCOM COMPONENTS ICPL2530, ICPL2531 DESCRIPTION The ICPL2530 and ICPL2531 dual channel devices each consists of an infrared emitting diode optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output transistor collector increases the speed

SMD M1A

Abstract: marking g3p marking L2 SOT23 6 m1a smd smd marking code m1a L2 SOT23 BF660 smd transistors smd code marking sot23 smd transistors code
Contextual Info: High Frequency SMD Transistors High Frequency SMD® Transistors Description Mechanical Data Philips Components high-frequency transistors fill the gap between general purpose transistors and wideband transistors by offering transition frequencies from a few hun­

5-pin smd Voltage Regulators

Abstract: RH1499 msk5059 RH1498dice MSK5058 RH1013DICE 5962F0921603 MSK5820 rh1014 MSK5044RH
Contextual Info: SPACE QUALIFIED PRODUCTS RADIATION HARD AMPLIFIERS Part type RH101A RH101ADICE MSK0041RH MSK106RH RH1078M RH1078MDICE RH07 RH07CDICE RH1013M RH1013DICE RH1014M MSK114RH RH108A RH108ADICE RH27AE RH27E RH27C RH27CDICE RH1056A RH1056DICE RH1498M RH1498DICE MSK198RH

network resistor

Abstract: 0R05 resistor network SIL smd resistor 1218
Contextual Info: V is hay Sfe r nice w w w. v i s h a y. c o m S e l ect o r G ui d e thin film resistors/networks resistive pr o d ucts V I S HAY I N T E R T E C H N OLO G Y , I N C . Thin Film Resistors • SMD chip resistors bare chips and wraparound • SIL resistor

Contextual Info: Web Site: www.parallax.com Forums: forums.parallax.com Sales: sales@parallax.com Technical: support@parallax.com Office: 916 624-8333 Fax: (916) 624-8003 Sales: (888) 512-1024 Tech Support: (888) 997-8267 Propeller Project Board USB (#32810) Parallax’s Propeller Project Board USB is a low cost solution for permanent projects using the multicore

transistor smd marking NE

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBT847 SOT23 PIN CONFIGURATION N PN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION

NB smd transistor

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBA847 SOT23 PIN CONFIGURATION N PN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CMBT9014 SOT-23 PIN CONFIGURATION N PN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION

TRANSISTOR SMD 9013

Abstract: equivalent of transistor 9013 9013 SMD CMBT9013
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CMBT 9013 SOT-23 PIN CONFIGURATION N PN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION

MOSFET TRANSISTOR SMD MARKING CODE nh

Abstract: TRANSISTOR SMD MARKING CODE LF MMIC SOT 343 marking CODE BC 148 TRANSISTOR PIN CONFIGURATION TRANSISTOR SMD CODE PACKAGE SOT363 smd diode sod-323 marking code 31 smd mosfet sot-363 smd code marking SOT223 MINI POWER MOSFET SMD TRANSISTOR MARKING BF transistor 313 smd
Contextual Info: APPLICATIONS DISCRETE SEMICONDUCTORS Jörg Lützner ● Achim Renner Package deal for discretes Progressive miniaturization of electronic modules and streamlined production technologies e.g. with molded interconnection devices call for sustained reduction in

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBT200 CMBT200A SOT23 PIN CON FIGURATION PN P 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 Designed for General Purpose Amplifier Applications.

Contextual Info: Philips Components D a ta sh e e t s ta tu s Product specification d a te o f is s u e April 1991 BDS943/945/947 NPN silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general

817 Optocoupler

Abstract: 4 pin optocoupler 817 optocoupler 817 817 OPTO-coupler 4 pin optocoupler C 817 optocoupler A 817 optocoupler C 817 optocoupler C 814 CNY 42 optocoupler smd Optocoupler 201
Contextual Info: Avago Technologies Optoisolation Product Part Number System Application Bulletin 102 Introduction The following information is provided to assist in the understanding of the Avago Technologies Optocouplers part number nomenclature identification. This document is intended as a general guide to the partnumbering system employed by each family.

sj 2025

Abstract: CAP SMD X7R 100NF 50V 10 ic sj 2025 ak300/2 Diode SMD SJ 19 0603 100nF/50V avx Diode SMD SJ 24 Diode SMD SJ 7 SMD TRANSISTOR R90 TRANSISTOR ECG 69
Contextual Info: Freescale Semiconductor User’s Guide Document Number: KT33730UG Rev. 1.0, 9/2009 KIT33730EKEVBE Evaluation Board Figure 1. KIT33730EKEVBE Evaluation Board Table of Contents 1 Kit Contents / Packing List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

lvdt interface WITH ADC

Abstract: 883B IC LVDT CMOS spice model
Contextual Info: Other Military Products— Selection Guides Analog I/O Port Model Resolution Bits Conv Time max fis SHA BW kHz typ Settling Time xs Ref. Volt Int/Ext Bus Interface Qual Level AD7569 8 2 500 1 Int 8 , (jlP 883B, SMD Comments CMOS, Complete I/O Port with DAC.

MARKING ZX SOT-23

Abstract: BC813 CMSH3-40 smd diode marking 5d SOD-323 2N29C7A BC48b BC337 N Channel Mosfet SOT-23 12W SOT-89 smd marking ol smd diode 5d SOD-323
Contextual Info: Sm all Signal Transistors U.S. Specification Preferred Series SOT-23 Case, 350mW TYPE NO. b v CBO b v c e o b v e b o *BVc £S MIN hpE ICBO VCB e v CE « íc m mm V c e (SAT) 9 lc ^ob »T m *OFF #,CE$ (V) <V) <"A) MIN MIN MAX m MIN General Purpose Amplifier/Switches

SMD MARKING CODE C2U

Abstract: smd code marking C2G
Contextual Info: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW TYPE NO. NEW ! NEW ! DESCRIPTION BVC*0 (VOLTS) BVcto (VOUS) w ao (VOLTS) 1 * 0 « S Ve. (VOUS) MM MM MM MAX 10 15 n FE m MM MAX 20 _ « «»V« (VOUS) le m Va< S *n < H (mA) (VOUS) MAX

CMPA801B025

Abstract: CMPA801B025F x-band mmic 3.5 DC Jack
Contextual Info: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher

CMPA801B025F

Abstract: CMPA801B025 cree rf 1B025F package 440208 cree rf cmpa801b025f
Contextual Info: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher