PN3640 Search Results

H R C M F 2J 225

Contextual Info: / D iscrete POWER & S ign al Technologies S E M IC O N D U C T O R • PN3640 MMBT3640 SOT-23 B Mark: 2J PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 m A. S ourced from Process 65. S e e

D43C8

Contextual Info: Discrete POWER & Signal Technologies PNP Saturated Switches Device No. 2N5771 PN3640 PN4258 ST5771-1 TN3467A Case Style VCBO VCEO VEBO V Min (V) Min (V) Min TO-92 (92) 15 15 4.5 TO-92 (92) 12 TO-92 (92) 12 TO-92 (92) 15 TO-226 (99) 40 12 12 15 40 4 4.5 4.5

PN3640

Abstract: 2N5771 PN4258 ST5771-1 TN3467A
Contextual Info: This PNP Transistors T Material Ln □ b-1 t- 1 UJ □ Copyrighted □ a -c □ -C tr & Semiconductor" V Device No. Case Style 2N5771 By ru PN3640 Its PN4258 Respective io ro ST5771-1 CBO V CEO V EBO (V Min (V) Min (V) Min TO-92 (92) 15 15 4.5 TO-92 (92)

process 65

Abstract: MMBT3640 PN3640 PN4258
Contextual Info: ss ss M-cr: c ì i m u i . - r r r o r? PN3640 MMBT3640 PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum RdtlflQ S

MMBT3640

Abstract: PN3640 CBVK741B019 F63TNR PN2222N PN4258
Contextual Info: PN3640 / MMBT3640 PN3640 MMBT3640 C E C B TO-92 B SOT-23 E Mark: 2J PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings*

Contextual Info: PN3640 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)12 I(C) Max. (A)80m Absolute Max. Power Diss. (W)600m Minimum Operating Temp (øC) Maximum Operating Temp (øC)140õ I(CBO) Max. (A)10nx @V(CBO) (V) (Test Condition)

TRANSISTOR C 557 B

Abstract: MMBT3640 PN3640 PN4258
Contextual Info: S e m i c o n d u c t o r ' “ PN3640 MMBT3640 PN3640 / MMBT3640 & Discrete POW ER & Signal Technologies National SOT-23 Mark: 2J PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. S e e

Contextual Info: js s i w n c i i N O . . . r r r a r ? PN3640 MMBT3640 Mark: 2J PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings

PN3640

Abstract: MMBT3640 PN4258
Contextual Info: N PN3640 MMBT3640 C E C B TO-92 SOT-23 E B Mark: 2J PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings*

PN3640

Abstract: MMBT3640 PN4258
Contextual Info: PN3640 MMBT3640 C E C B TO-92 SOT-23 E B Mark: 2J PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* Symbol

Contextual Info: PN3640 / MMBT3640 PN3640 MMBT3640 C E C B TO-92 B SOT-23 E Mark: 2J PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings*

PN3640

Contextual Info: PN3640 / MMBT3640 PN3640 MMBT3640 C E C B TO-92 B SOT-23 E Mark: 2J PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings*

CBVK741B019

Abstract: F63TNR MMBT3640 PN2222N PN3640 PN4258
Contextual Info: PN3640 / MMBT3640 PN3640 MMBT3640 C E C B TO-92 B SOT-23 E Mark: 2J PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings*

PN3640

Contextual Info: u c to r PN3640 MMBT3640 PN3640 / MMBT3640 D iscrete POW ER & S ig n a l Technologies E C TO-92 SOT-23 BE B Mark: 2J PNP Switching Transistor T h is d e v ic e is d es ig n e d fo r v e ry high s p e e d satu ra te sw itching at co lle c to r cu rre n ts to 1 0 0 m A . S o u rc e d fro m P ro c e s s 6 5 . S e e

NPN 2907A EBC

Abstract: 2907A EBC 2222a pn
Contextual Info: small Signal Transistors TO-92 Case Continued TO-92 T Y P E MO, F A M IL Y LEA D CODE VC B O v CEO v EBO (V) 00 MW *^ C 6 S U ftf MU'! IliN ipstf* *e s 8 "fe w m * WS; •CBO s* V C BC - m • V c s *» c W (V ) MN ' - m (*A ) v C E fS A K > « * C 00 (« A )

1ff TRANSISTOR SMD MARKING CODE

Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
Contextual Info: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369

PN3639

Abstract: PN3640
Contextual Info: 'iM F H i M ìì Central PN3639 PN36*K Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors PNP SILICON TRANSISTOR JEDEC TO-92 CASE (EBC) DESCRIPTION

2N4872

Abstract: 2n5141 10N60N 2N3304 ESM2894 92AB LOW-POWER SILICON PNP 2SA1229 MM8T3640 MPS4258
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 ESM2894 2N5228 PN5140 2N5140 2N5141 MPS3639 2N3451 MPS4257 PN3639 2N3639 ~~:~~j~ 15 20 MM4257 MM4257 MM4257 2N3304 8SX94 2N4207 8SX35 MPSL07 ~S~~~~l 25 2SA1245 KT380V KT389V V(BR)CEO 30 35 2N5837

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

Diode j106

Abstract: SSP6N60 TD13002 BUD620 BUF620 BUF640A BUF642 BUF644 TD13003 TD13004
Contextual Info: Switching Power Transistors Part No. and Polarity NPN Operating Temperature: -65 o C to 150oC Maximum Ratings P TOT @ Tcase PNP IC VCES Characteristics V CEO tf @ IC hFE @ IC & VC E VCE SAT @ I C and h FE (W) (°C) (A) (V) (V) (µs) (A) (A) (V) (V) (A) BUD620

PNP 3-224

Abstract: NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A
Contextual Info: Section 3 Bipolar Transistors PN100 / PN100A / MMBT100 / MMBT100A NPN GPA . 3-4 PN200 / PN200A / MMBT200 / MMBT200A PNP GPA . 3-7 FPN330 / FPN330A NPN Low Saturation Transistor . 3-11

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

2N3859

Contextual Info: Small signal Transistors TO-92 Case TO-92 TYPE NO. FAMILY LEAD CODE VcBO v CEO v EBO ICBO V (V) (V) m *VCES MIN 18 MIN 5.0 •«c e s *'c e v MAX 500 @ VCE e i e hFE VCBC (V) (V) (lllA) VCE(SA T )@ «C Cob (V) (mA) •hfe(1kHZ) *T NF •off (PF) (MHz) (* » )