PN5447 Search Results

2N4355

Abstract: 2N5139 2N3644 2N4121 TN2904A NS4234 TIS91 2N3638A 50113g 2N4354 T-12
Contextual Info: NATL S E M IC O N D { D I S C R E T E ! ifi DE | This Material Copyrighted By Its Respective Manufacturer b S 0 1 1 3 0 0 0 3 S M M 3 7 f ” NATL S E M IC O N D NATL SEMICOND, s Tut Conditions CO CD 8 o £ 2 Q. CM CO CO o o O O o o 2fl D F | t S D 1 1 3 D

2SB641

Abstract: BC181 3SM diode CS9012 SF158 2S302 LOW-POWER SILICON PNP 2N924 BCZ10 HA9048
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30

2SB641 r

Abstract: 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30

Contextual Info: TO-92 Plastic Package Transistors PNP Electrical Characteristics (Ta=25’C, Unless Otherwise Specified) Maximum Ratings Type No. PN4143 ^cao (V) Min 60 V CEO ^EBO (V) Mm (V) Min 40 5 PD (W) 0Tc=25’c 0.625 'cso Vcb *CES m VCE " fe 9 (V) (MA) a (v) Max

2N4291

Abstract: 2N5447 MMBT3638 MMBT3638A MMBT4916 2N4290 pn917 2N5221 BCW29 BCW30
Contextual Info: NATL SEMICOND DISCRETE 52E D • bSQUBQ 27~ òI 003777k' □ ■ PNP General Purpose Transistors by Ascending Vceo Part Type Vcep(V) VcboOO Min Min . HfB Min Max (m A /V ) Ft (MHz) Min 50 50 30 50 200 200 600 120 500/1.0 350/1.0 50/10 10/1.0 60 60 100 850

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

PN4249

Abstract: PN5447 PN5143 PN4143 PN4248 PN4250 PN4250A PN4354 PN4356 PNS142
Contextual Info: TO-92 Plastic Package Transistors PNP Electrical Characteristics (Ta=25”C, U nless Otherwise Specified) Maximum Ratings Type No. CBO CEO EBO (V) (V) (V) Min Min Min 40 PN4143 Pd (W) (A) @Tc=25°c 0.625 I CBO (ma) Max V CB (V) (mA) Max @ (V) Min 0.6

BF244 datasheet

Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216

CD423

Abstract: SA1015 2NS400 PN544 T1S91 BC309C BC212
Contextual Info: Maximum Ratings Type No. V CSO V Min VC60 (V) Electrical Characteristica (Ta=25'C, Unlesa Othacwise Spccified) £60 Pd (W) (V) (A) Mm 8Tc=25°! 2N3702 0.625 2N3905 0.625 2N3906 hFE e 'cao vce tes VCE (pA) 0 (V) (liA) #(V) Max Max Min 0.1 60 20 *0.05 0.625 0.2

Contextual Info: TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. PN4142 PN4143 Electrical Characteristics <Ta=25”C, U n ie » Otherwise Specified) ^C80 ^CEO ^EBO Pd (W) (V) (A) (V) (V) Min Min Min @Tc=25"( 60 60 40 40 5 'c & ^CE 'cBO VCB 'ces ^CE I>fe (mA) (V)

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog