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    2N2696 Search Results

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    2N2696 Price and Stock

    Samsung Semiconductor 2N2696

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    Bristol Electronics 2N2696 8 1
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    Quest Components 2N2696 6
    • 1 $14
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    National Semiconductor Corporation 2N2696

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    Quest Components 2N2696 1,984
    • 1 $18.9
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    2N2696 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2696 Semelab Bipolar PNP Device in a Hermetically Sealed TO18 Metal Package - Pol=PNP / Pkg=TO18 / Vceo=25 / Ic=0.5 / Hfe=30min / fT(Hz)=100M / Pwr(W)=0.36 Original PDF
    2N2696 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N2696 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N2696 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N2696 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2696 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N2696 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N2696 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2696 Unknown Transistor Replacements Scan PDF
    2N2696 Unknown GE Transistor Specifications Scan PDF
    2N2696 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N2696 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2696 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N2696 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N2696 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N2696 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N2696 Unknown Vintage Transistor Datasheets Scan PDF
    2N2696 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    2N2696 National Semiconductor PNP Transistor Scan PDF
    2N2696 Raytheon Selection Guide 1977 Scan PDF

    2N2696 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB641

    Abstract: BC181 3SM diode CS9012 SF158 2S302 LOW-POWER SILICON PNP 2N924 BCZ10 HA9048
    Text: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30


    Original     		PDF 2N1221 2S3030 BCZ10 2S302 HA9048 TP3S38 2N923 BCY28 2SB641 BC181 3SM diode CS9012 SF158 LOW-POWER SILICON PNP 2N924

    2SB641 r

    Abstract: 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524
    Text: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30


    Original     		PDF 2N1221 2S3030 BCZ10 2S302 HA9048 TP3S38 2N923 BCY28 2SB641 r 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524

    Untitled

    Abstract: No abstract text available
    Text: 2N2696CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)


    Original     		PDF 2N2696CSM 1/50m 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N2696 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 25V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


    Original     		PDF 2N2696 O206AA) 1/50m 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N2696 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)500m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N2696 Freq100M

    2N2696

    Abstract: 1455
    Text: 2N2696 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 25V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


    Original     		PDF 2N2696 O206AA) 1/50m 2-Aug-02 2N2696 1455

    2N2696CSM

    Abstract: No abstract text available
    Text: 2N2696CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)


    Original     		PDF 2N2696CSM 1/50m 2-Aug-02 2N2696CSM

    2N2696

    Abstract: No abstract text available
    Text: 2N2696 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 25V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


    Original     		PDF 2N2696 O206AA) 1/50m 19-Jun-02 2N2696

    Untitled

    Abstract: No abstract text available
    Text: M aximum R atings Type No. E lectrical C haracteristics Ta=25"C, Unless O ttw w iM SpacHted hFE e Min Max 15 20 0.36 0.005 15 35 0.36 0.025 10 20 30 'ceo (V) Min CEO PD (V) Min (W) 0Tc=25°c 2N869 25 18 0.36 0.01 2N995 20 15 2N2696 25 25 2N2894 2N2906 2N2906A


    OCR Scan     		PDF 2N869 2N995 2N2696 BCY79-9 BCY79-10 BFX37 CF103

    2N907 PNP

    Abstract: No abstract text available
    Text: TO-18 Metal-Can Package Transistors PNP Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No. 2N2696 CBO CEO (V) Min (V) Min 25 25 ^EBO Po (V) Min (W) @Tc=25°c 0.36 h FE (A) W Max 0.025 0.5 @ (V) M Max Min 10 0.36 0.2


    OCR Scan     		PDF 2N2696 2N3251 2N3251A 2N3496 2N3497 2N869 2N995 BC177 2N907 PNP

    2N2696

    Abstract: 2N2894 2N2906 2N2906A 2N2907 2N2907A 2N3250 2N3250A 2N3251 2N3496
    Text: 1 TO-18 Metal-Can Package Translate*« PNP Maximum Ratings Type No. 2N2696 2N2894 2N2906 Vcbo (V) Min ^CEO ^EBO (V) Min (V) Min 25 25 12 60 12 40 Pd (W) Tc=25°c 0.36 4 5 0.36 0.4 Electrical Characteristics (Ta=25*C, Unless Otherwise Specified) 'cm (A)


    OCR Scan     		PDF 2N2696 2N2894 2N2906 2N3496 2N3497 2N869 2N995 BC177 2N2906A 2N2907 2N2907A 2N3250 2N3250A 2N3251

    2N3568

    Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
    Text: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545


    OCR Scan     		PDF 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N3568 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224

    C495 transistor

    Abstract: C735 transistor c638 transistor C756 TRANSISTOR transistor c495 C644 transistor PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633
    Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a sm all extra


    OCR Scan     		PDF BCW35GP. BS9300 2N2219A 2N2221 2N2222 2N2221A fT018 C495 transistor C735 transistor c638 transistor C756 TRANSISTOR transistor c495 C644 transistor PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633

    n4300

    Abstract: 32Vj 2N1719 2N4000 2N696 TEXAS INSTRUMENTS transistor t05 XB412 2N1507 2N3419 2N1711
    Text: Case T ype No. C o n s tru c tio n see note 1 Silicon Transistors M a xim u m R a tin g s a t2 5 °C am b. S P E C IA L C h a ra c te ris tic s FE A T U R E S h h FE V CB V V CE V v EB V •c A 15 2 30 15 2 M in. P to t W mA 0-2 10 50 20 0-2 10 50 20 Max.


    OCR Scan     		PDF TIXS12 TIXS13 1200t 2N696 2N697 2N698 2N1507 2N1613 2N1711 2N3418 n4300 32Vj 2N1719 2N4000 2N696 TEXAS INSTRUMENTS transistor t05 XB412 2N3419

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


    OCR Scan     		PDF 20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09

    2N9308

    Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
    Text: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5


    OCR Scan     		PDF 00DDS7Ã T-A7-01 2N497 12/3S 30/S9 2N3725A 2N3947 2N4080 2N4137 2N4207 2N9308 2N221BA 2N69S 2N3304 2M2193 2NI893 2N236S 2N408 2N238

    SL100B

    Abstract: SL100 TRANSISTORS SL100A SL100 npn NPN SL100 BF107 SL100h N4030 N2222A sg103
    Text: SILICON TRANSISTORS SEMICONDUCTORS Electrical Characteiistics At T j-2 5 'C Maximum Ratings TYPE NPN [PNP /2 N 3 7 0 1 /S N 4 0 3 0 /'SN 4031 /•'’2N4032 ^JN 4033 J3CY11S ''S K 1 0 0 •fS&lOOA ISKIOOB rSKlOOH 1J^K IO I '.SK 102 SL100 «* SL100A 3 SL100B


    OCR Scan     		PDF Tj-25 Ta-26Â To-25 /2N3701 T0-18 N4030 SN4031 2N4032 /2N4033 O-105 SL100B SL100 TRANSISTORS SL100A SL100 npn NPN SL100 BF107 SL100h N2222A sg103

    SL100B

    Abstract: SL100A BF107 SL100 npn N2222A 2N4032 N4030 SK100B SK102 SL100
    Text: SILICON TRANSISTORS SEMICONDUCTORS Electrical Characteiistics At T j-2 5 'C Maximum Ratings TYPE NPN [PNP /2 N 3 7 0 1 /S N 4 0 3 0 /'SN 4031 /•'’2N4032 ^JN 4033 J3CY11S ''S K 1 0 0 •fS&lOOA ISKIOOB rSKlOOH 1J^K IO I '.SK 102 SL100 «* SL100A 3 SL100B


    OCR Scan     		PDF Tj-25 Ta-26Â To-25 /2N3701 N4030 SN4031 2N4032 /2N4033 O-220 O-106 SL100B SL100A BF107 SL100 npn N2222A SK100B SK102 SL100

    BCY79-9

    Abstract: bcy791 BcY591 BSX21 2N706 BC107C BC109C pin configuration 2N706A 2N718A 2N720
    Text: TO-18 h - B -h ! o PIN C O N F IG U R A T IO N 1. Em itter 2. B a s e 3. Co llector DIM MIN A 5 ,2 4 M AX 5 ,8 4 B 4 ,5 2 4 ,9 7 C 4,31 5 ,3 3 D 0 ,4 0 0 ,5 3 0 ,7 6 E - F - 1,27 G - 2 ,9 7 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 D E G ALL DIMENSIONS ARE IN M.M.


    OCR Scan     		PDF 2N706 2N706A BCY79-9 BCY79-10 BFX37 CF103 23fl33cm 000135T BCY79-9 bcy791 BcY591 BSX21 BC107C BC109C pin configuration 2N718A 2N720

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    cs9011j

    Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
    Text: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •


    OCR Scan     		PDF 2N1507 2N1566 2NI613 2N1889 2N1890 2N1893 2N1973 2N1974 2NI975 O-237 cs9011j MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C

    BC140 equivalent

    Abstract: BCY34 2N328A BCY31 bcy59 equivalent BC109 MOTOROLA BCY25 DH3725CN bc108c equivalent 2N3133 MOTOROLA
    Text: Discrete Devices Transistors C ont. Medium Current, High-Speed Amplifiers Maximum Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C VCB VCE VEB Volts Volts Volts hfe VcE(Sat) @ Ic/lß @ ic Min/Max mA Volts mA/mA ft MHz Min Cob pF tON tOFF


    OCR Scan     		PDF 2N721A 2N722A 2N1132A 2N1132B 2N2217 2N2218 2N2218A 500/5NPN BSY51 BC140 equivalent BCY34 2N328A BCY31 bcy59 equivalent BC109 MOTOROLA BCY25 DH3725CN bc108c equivalent 2N3133 MOTOROLA

    2N2201

    Abstract: 2k4037 2N3637 semicoa npn general purpose medium speed 2N4358 2N2008 2N3114 2N3498 2N3499 2N3500
    Text: 8134693 SEMICQA NPN GENERAL PURPOSE MEDIUM SPEED AMPLIFIERS Cont’d Type NPN 2N3498 2N3499 2N2201 2N2008 2N3923 2N3712 2N3114 2K4925 2N3500 2K3501 2N4926 2N2726 2N2727 40412 2N4927 2N3440 2N5279 2N3439 2N5092 Electrical Characteristics @ 25°C Maximum Ratings


    OCR Scan     		PDF DDDQ133 2N3498 2N3499 2N2201 2N2008 2N3923 2N3712 2N3114 2K4925 2N3500 2k4037 2N3637 semicoa npn general purpose medium speed 2N4358

    N2219

    Abstract: 2N2453 2N2243 Hirel 2N1991 2N1937 2N2060 2N2102 2N2192 2N2192A
    Text: 37E D SEtlELAB l t d 6133167 0000013 0 ISMLB 7=27- 0 / T-Jl-Ol Type No. Reliability Polarity Option Package V^e o ic cont hFE@ VCE/*C *T Pd 2N1937 2N1991 2N2060 2N2102 .2N2192 HI-REL SCREEN HI-REL HI-REL HI-REL NPN PNP PNP NPN NPN T063 T039 T077 T039 T039


    OCR Scan     		PDF 133ia? 00Q13 2N1937 2N1991 2N2060 5/10m 2N2102 35min 10/10m 2N2192 N2219 2N2453 2N2243 Hirel 2N2192A