PNP 30A Search Results

MJ4502

Abstract: MJ802 MJ4502 MJ802
Contextual Info: ÆàMOSPEC HIGH-POWER PNP SILICON TRANSISTOR PNP MJ4502 .for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. FEA TU RES * Continuous Collector Current- lc= 30A * High DC Current Gain- hFE=25-100@lc= 7.5A * Excellent Safe Operating Area

2N4261

Contextual Info: 2N4261 Chip: 4.5V; 30A geometry 0014; polarity PNP 4.99 Transistors . 1 of 1 Home Part Number: 2N4261 Online Store 2N4261 Diodes C hip: 4 .5 V; 3 0 A ge o m et ry 0 0 1 4 ; po larity PNP Transistors

transitor SOT 363

Abstract: sot-26 transitor
Contextual Info: CZT7090LE ENHANCED SPECIFICATION SURFACE MOUNT LOW VCE SAT PNP POWER TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT7090LE is an Enhanced Specification Low VCE(SAT) PNP Silicon Power Transistor packaged in an industry standard

marking 591 sot23

Contextual Info: Central CMPT591E Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR TM DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT591E type is an Enhanced version of the industry standard 591 PNP silicon transistor. This device is manufactured by the

CMPT591E

Contextual Info: CMPT591E SURFACE MOUNT PNP SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT591E type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high

germanium transistor pnp

Abstract: nte213
Contextual Info: NTE213 Germanium PNP Transistor High Power, High Gain Amplifier Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment. Absolute Maximum Ratings:

nte181

Abstract: NTE180MCP NEC 08F NTE181MP NTE180 NTE181 power transistor 200w audio power amplifier
Contextual Info: NTE180 PNP & NTE181 (NPN) Silicon Power Transistor High Power Audio Amplifier Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per

2n4399

Abstract: 2N4398
Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 PNP SILICON HIGH-POWER TRANSISTORS PNP 2N4398 2N4399 2N5745 General Purpose use In amplifier and switching applications. FEATURES: *DC Current Gain Specified-1.0 to 30 A

JE6043

Abstract: JE6045 MJE6043 MJE6044 JE6044 MJE6045 mje6041 2N6041 je6041 2N6040
Contextual Info: MO T OR OL A SC X S TR S/ R F 12E D | b3b7254 0G0MSfi4 b | 7 ^ B ^ / 2N6040 thru 2N6042 PNP 2N6043 Him 2N6045 NPN MJE6040 thru MJE6041 PNP MJE6043 thru MÌE6045 NPN MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

BDX 20a

Abstract: BDX68A BDX68B BDX68C BDX69 BDX69A BDX69B BDX69C 200w audio amplifier ic
Contextual Info: BDX68A BDX68A BDX68B BDX68C SEME LAB PNP DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 PNP Darlington transistors for audio output stages and general amplifier and switching applications.

200w AUDIO AMPLIFIER

Abstract: transistor BDX 65 200w audio power amplifier pnp transistor 120v 10a a/pnp transistor 120v 10a
Contextual Info: BDX68A BDX68A BDX68B BDX68C SEME LAB PNP DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 PNP Darlington transistors for audio output stages and general amplifier and switching applications.

p705

Contextual Info: Central CMPT591E Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR ENHANCED <E > S P E C IFIC A T IO N DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT591E type is an Enhanced version of the industry standard 591 PNP silicon transistor. This device is manufactured by the

T0204

Abstract: NS11015
Contextual Info: AŒ y ^ IP NS11015 NEW ENGLAND SEMICONDUCTOR PNP SILICON DARLINGTON POWER TRANSISTORS • • • • • • 30 AMPERE PNP DARLINGTON POWER TRANSISTOR GENERAL PURPOSE AM PLIFIER LOW FREQUENCY SW ITCHING HIGH DC CURRENT GAIN MONOLITHIC CONSTRUCTION BUILT IN BASE EM ITTER SHUNT RESISTORS

2n4399

Contextual Info: 2N4398 2N4399 2N5745 PNP SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4398 series types are PNP silicon power transistors designed for power amplifier and switching applications. MARKING: FULL PART NUMBER

Contextual Info: BDX68A BDX68A BDX68B BDX68C S EM E LA B PNP DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 PNP Darlington transistors for audio output stages and general amplifier and switching applications.

Contextual Info: Ordering number : ENN0000 30A02MH PNP Epitaxial Planar Silicon Transistor 30A02MH Low-Frequency General-Purpose Amplifier Applications Preliminary Applications • Package Dimensions Low-frequency Amplifer, high-speed switching, small motor drive. unit : mm

Contextual Info: Ordering number : ENN0000 30A02SS PNP Epitaxial Planar Silicon Transistor 30A02SS Low-Frequency General-Purpose Amplifier Applications Preliminary Applications • Package Dimensions Low-frequency Amplifer, high-speed switching, small motor drive. unit : mm

Contextual Info: Central CMPT591E Semiconductor Corp. E N H A N C E D S P E C IF IC A T IO N SURFACE MOUNT PNP SILICON TRANSISTOR EN H AN CED <E> - 'V S P E C IFIC A T IO N DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT591E type is an Enhanced version of the industry standard 591 PNP

ic 75202

Abstract: 30A01SS
Contextual Info: 5Ordering number : ENN7520 30A01SS PNP Epitaxial Planar Silicon Transistor 30A01SS Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency power amplifier, muting circuit. unit : mm 2159A Features • 0.3 Side View

30A01S

Abstract: 75113
Contextual Info: Ordering number : ENN7511 30A01S PNP Epitaxial Planar Silicon Transistor 30A01S Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency power amplifier, muting circuit. unit : mm 2106A Features • • • [30A01S]

Contextual Info: 30A02CH Ordering number : EN7358A SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 30A02CH Low-Frequency General-Purpose Amplifier Applications Applications • Low-frequency Amplifier, high-speed switching, small motor drive Features

7361

Abstract: 73611 30A02SP
Contextual Info: Ordering number : ENN7361A 30A02SP PNP Epitaxial Planar Silicon Transistor 30A02SP Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions Low-frequency Amplifer, high-speed switching, small motor drive. unit : mm 2033A [30A02SP]

30A01SP

Abstract: ENN7512
Contextual Info: Ordering number : ENN7512 30A01SP PNP Epitaxial Planar Silicon Transistor 30A01SP Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions Low-frequency power amplifier, muting circuit. unit : mm 2033A Features 0.4 0.5 15.0

73581

Abstract: 30A02CH
Contextual Info: Ordering number : ENN7358 30A02CH PNP Epitaxial Planar Silicon Transistor 30A02CH Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions Low-frequency Amplifier, high-speed switching, small motor drive. unit : mm 2150A [30A02CH]