Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PNP 5GHZ Search Results

    PNP 5GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73128RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    PNP 5GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking MS

    Abstract: TA-0541 TRANSISTOR PNP 5GHz common base amplifier circuit designing transistor 5ghz pnp 2SA1963 5GHz PNP transistor "marking ms"
    Text: Ordering number:5230 PNP Epitaxial Planar Silicon Transistor 2SA1963 High-Frequecy Low-Noise Amplifier, Ultrahigh-Speed Switching Applications Features Package Dimensions • Low noise : NF=1.5dB typ f=1GHz . 2 · High gain : | S2le | =9dB typ (f=1GHz). · High cutoff frequency : fT=5GHz typ.


    Original     		PDF 2SA1963 2018B 2SA1963] marking MS TA-0541 TRANSISTOR PNP 5GHz common base amplifier circuit designing transistor 5ghz pnp 2SA1963 5GHz PNP transistor "marking ms"

    KT 839

    Abstract: 2SA1963 ITR05023 ITR05024 ITR05025 ITR05026 ITR05027 TA-0541 marking MS
    Text: Ordering number:ENN5230 PNP Epitaxial Planar Silicon Transistor 2SA1963 High-Frequency Low-Noise Amplifier, Ultrahigh-Speed Switching Applications Features Package Dimensions • Low noise : NF=1.5dB typ f=1GHz . 2 · High gain : | S2le | =9dB typ (f=1GHz).


    Original     		PDF ENN5230 2SA1963 2018B 2SA1963] KT 839 2SA1963 ITR05023 ITR05024 ITR05025 ITR05026 ITR05027 TA-0541 marking MS

    bfr96 equivalent

    Abstract: MCE544 bfr96 equivalent TRANSISTORS MC1343 transistor equivalent bfr96 2N5031 equivalent TRANSISTOR PNP 5GHz MRF630 MRF544 microsemi MRF237
    Text: MCE545 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MCE545 is a high breakdown, high gain, discrete PNP silicon bipolar transistor, shipped in waffle pack. ! High Breakdown BVCEO = 70V ! Gold Back Metal


    Original     		PDF MCE545 Symb333 SD1127/MRF237 MS1649/MRF630 MRF837/MRF8372 MRF559 400mA 200mA bfr96 equivalent MCE544 bfr96 equivalent TRANSISTORS MC1343 transistor equivalent bfr96 2N5031 equivalent TRANSISTOR PNP 5GHz MRF630 MRF544 microsemi MRF237

    stacked transistors SOI RF

    Abstract: TRANSISTOR PNP 5GHz SiGe PNP transistor 5GHz PNP transistor gummel transistor 5ghz pnp complementary npn-pnp RF Bipolar Transistor SILICON HIGH POWER bipolar npn TRANSISTOR Bipolar HJ
    Text: A Complementary Bipolar Technology on SOI Featuring 50GHz NPN and 35GHz PNP Devices for High Performance RF Applications S. Nigrin, M. C. Wilson, S. Thomas, S. Connor and P. H. Osborne Zarlink Semiconductor, Cheney Manor, Swindon, Wiltshire, SN2 2QW, U.K.


    Original     		PDF 50GHz 35GHz stacked transistors SOI RF TRANSISTOR PNP 5GHz SiGe PNP transistor 5GHz PNP transistor gummel transistor 5ghz pnp complementary npn-pnp RF Bipolar Transistor SILICON HIGH POWER bipolar npn TRANSISTOR Bipolar HJ

    p331 TRANSISTOR

    Abstract: transistor 5ghz pnp Bipolar HJ TRANSISTOR PNP 5GHz high gain PNP RF TRANSISTOR GEC Marconi Materials Technology p349 Schematics 5250 NPN transistor which has frequency greater than 2 pnp 8 transistor array
    Text: A New High Performance Complementary Bipolar Technology Featuring 45GHz NPN and 20GHz PNP Devices. M C Wilson, P H Osborne, S Thomas and T Cook Mitel Semiconductor Cheney Manor, Swindon, Wiltshire, SN2 2QW, U.K. Tel: +44 1793 518000, FAX: +44 1793 518351 E-mail: martin_wilson@mitel.com


    Original     		PDF 45GHz 20GHz 30GHz pp164-167, 20ps/G p331 TRANSISTOR transistor 5ghz pnp Bipolar HJ TRANSISTOR PNP 5GHz high gain PNP RF TRANSISTOR GEC Marconi Materials Technology p349 Schematics 5250 NPN transistor which has frequency greater than 2 pnp 8 transistor array

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


    Original     		PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    ATF-55143

    Abstract: ECEN4228 ATF-54143 application notes ATF-54143 ATF55143 BCV62B Component Library S402D AN-1285
    Text: Low Noise Amplifiers for 5.125 - 5.325 GHz and 5.725 - 5.825 GHz Using the ATF-55143 Low Noise PHEMT Application Note 1285 Description This paper describes two low noise amplifiers for use in the IEEE 802.11a, ETSI/BRAN HiperLAN/2 5GHz standards. The circuits are designed for use with multilayer 0.031 inch thickness FR-4 printed circuit board


    Original     		PDF ATF-55143 MTT-28, ECEN4228 ATF-551M4 5988-5846EN ATF-54143 application notes ATF-54143 ATF55143 BCV62B Component Library S402D AN-1285

    lna 2.5 GHZ s parameter ads design

    Abstract: 5Ghz lna transistor Curtice ATF-55143 ATF-54143 ATF55143 BCV62B S402D agilent pHEMT transistor agilent pHEMT transistor LNA LOW NOISE AMPLIFIER
    Text: Low Noise Amplifiers for 5.125 - 5.325 GHz and 5.725 - 5.825 GHz Using the ATF-55143 Low Noise PHEMT Application Note 1285 Description This paper describes two low noise amplifiers for use in the IEEE 802.11a, ETSI/BRAN HiperLAN/2 5GHz standards. The circuits are designed for use with


    Original     		PDF ATF-55143 ATF55143 o8675 5988-5846EN ECEN4228 ATF-551M4 lna 2.5 GHZ s parameter ads design 5Ghz lna transistor Curtice ATF-54143 BCV62B S402D agilent pHEMT transistor agilent pHEMT transistor LNA LOW NOISE AMPLIFIER

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    omron relay G2R-2 8 pin 12V DC

    Abstract: Tyco 3604 relay krp power source sps 6360 SRD 12VDC SL C data 8873 64 pin colour tv ic TTK SG 2368 transistor DK qe smd eaton T85 rotary Switch PH ON 823 m 8645 ic MB 16651 G
    Text: ND3% BASE1 XXXX5998-1631-1-P 1631 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 19-07-11 Hour: 08:29 TS:TS date TS time RELAYS, SOLENOIDS & CONTACTORS Go Online for Product Availability AUTOMOTIVE RELAYS DG34 SERIES AUTOMOTIVE INDUSTRIAL POWER RELAYS 60-80A AUTOMOTIVE RELAYS CONT.


    Original     		PDF 277VAC, 30VDC 10VAC/DC 250VAC 10million 0-80A DG34-1021-36-1012-F 59PIARQ S18UUA S18UUAQ omron relay G2R-2 8 pin 12V DC Tyco 3604 relay krp power source sps 6360 SRD 12VDC SL C data 8873 64 pin colour tv ic TTK SG 2368 transistor DK qe smd eaton T85 rotary Switch PH ON 823 m 8645 ic MB 16651 G

    2SC1412K

    Abstract: UMW8 2sc1412 2SC241 baw 92 FMY3 2SC2412AK 2SC141 2SC241ZK
    Text: @Features 1’ Two 2SA1037AK in UMT and SMT packages. 2‘ Mounting possible with UMT3 or SMT3 automatic mounting machines. l External dimensions Units: mm UMTl N 2OkO2 IMTl A 13t01 09kOl 065 (3 3‘ Transistor elements are independent, eliminating interference.


    Original     		PDF 2SA1037AK 13t01 09kOl SC-88 SC-74 1T106 Cl021 2SC1412K 2SA1037AK UMW8 2sc1412 2SC241 baw 92 FMY3 2SC2412AK 2SC141 2SC241ZK

    NTE74HC4067

    Abstract: NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4023B NTE4027B NTE74HC4053 NTE4553B NTE74HC165
    Text: Semiconductors Integrated Circuits Integrated Circuits cont. Part Number Description NTE40175B IC-CMOS, Quad D-Type Flip-Flop NTE4017B IC-CMOS, Decade Counter w/10 Decoder Outputs NTE40182B IC-CMOS, Look Ahead Carry Generator Part Number Description NTE4018B


    Original     		PDF NTE40175B NTE4017B NTE40182B NTE4018B NTE4001B NTE4019B NTE4001BT NTE40192B NTE4002B NTE40193B NTE74HC4067 NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4023B NTE4027B NTE74HC4053 NTE4553B NTE74HC165

    isl3871

    Abstract: ISL3084 ISL3684 ISL3984 VCO 5GHz 2.4GHZ synthesizer
    Text: ISL3684 Data Sheet PR O P R I ET A R Y March 2002 FN8001.2 Direct Down Conversion Transceiver Features The Intersil ISL3684 Wireless LAN Integrated RF Front End is part the PRISM 3, 2.4HGz 11Mbit, 802.11b compliant radio chipset. The ISL3684 interfaces directly with Intersil's ISL3871 Integrated


    Original     		PDF ISL3684 FN8001 ISL3684 11Mbit, ISL3871 ISL3984 ISL3084 1-888-INTERSIL ISL3084 VCO 5GHz 2.4GHZ synthesizer

    ISL3871

    Abstract: isl3684 lan transistor ISL3084 ISL3984 Intersil WLAN chipset
    Text: ISL3684 Data Sheet March 2002 FN8001.2 Direct Down Conversion Transceiver Features The Intersil ISL3684 Wireless LAN Integrated RF Front End is part the PRISM 3, 2.4HGz 11Mbit, 802.11b compliant radio chipset. The ISL3684 interfaces directly with Intersil's ISL3871 Integrated


    Original     		PDF ISL3684 FN8001 ISL3684 11Mbit, ISL3871 ISL3984 ISL3084 1-888-INTERSIL lan transistor ISL3084 Intersil WLAN chipset

    PNP 2GHz LNA

    Abstract: mce544 bfr96 equivalent TRANSISTOR NPN 5GHz TRANSISTOR PNP 5GHz MC1333 ms1649 MCE545 transistor 5ghz pnp MRF630
    Text: MC1333 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MC1333 is a low noise, high gain, discrete silicon bipolar transistor, shipped in waffle pack. ! Low noise-2.5dB@500MHz ! Gold Back Metal IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com


    Original     		PDF MC1333 500MHz SD1127/MRF237 MS1649/MRF630 MRF837/MRF8372 MRF559 400mA 200mA PNP 2GHz LNA mce544 bfr96 equivalent TRANSISTOR NPN 5GHz TRANSISTOR PNP 5GHz ms1649 MCE545 transistor 5ghz pnp MRF630

    ISL3686A

    Abstract: ISL3686B ISL3686BIR ISL3880 qfn 8x8 reel ISL3084 ISL3686 ISL3865A PRISM GT
    Text: ISL3686B Data Sheet PRELIMINARY June 2003 FN8067 Direct Down Conversion Transceiver Features The Intersil ISL3686B is a highly integrated SiGe process, direct down conversion transceiver and is part of the PRISM GT, 2.4GHz 54Mbps, IEEE802.11b/g compliant


    Original     		PDF ISL3686B FN8067 ISL3686B 54Mbps, IEEE802 11b/g ISL3865A ISL3880 ISL3984/85 ISL3686A ISL3686BIR ISL3880 qfn 8x8 reel ISL3084 ISL3686 PRISM GT

    marking MS

    Abstract: rt 0608 2SA1963 TA-0541 5GHz PNP transistor
    Text: Ordering n u m b e r:E N 5230 No.5230 2SA1963 PNP Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amp, Ultrahigh-Speed Switching Applications Features • Low noise : NF = 1.5dBtyp f=lGHz . • High gain : I S21e I z= 9dB typ (f= 1GHz). • High cutoff frequency : fr = 5GHz typ.


    OCR Scan     		PDF EN5230 2SA1963 marking MS rt 0608 TA-0541 5GHz PNP transistor

    NPN MATCHED PAIRS

    Abstract: 200 watts audio amp power transistors pnp NPN pnp MATCHED PAIRS NTE388 NTE61 NTE60 NTE6061 PNP 5GHz t0202 NTE58
    Text: BI-POLAR TRANSISTORS NTE TVpe Number Polarity and Material Description and Application 59 PNP-Si High Pwr Audio Output Compl to N TE 58 60 NPN-Si High Pwr Audio, Disk Head , Positioner, Linear Applications (Compl to NTE61) 60MP NPN-Si Matched Pair of NTE60


    OCR Scan     		PDF NTE58) NTE61) NTE60 NTE60) NTE88) NTE87 NTE87) NTE88 b43125ci NPN MATCHED PAIRS 200 watts audio amp power transistors pnp NPN pnp MATCHED PAIRS NTE388 NTE61 NTE60 NTE6061 PNP 5GHz t0202 NTE58

    Untitled

    Abstract: No abstract text available
    Text: BI-POLAR TRANSISTORS Description and Application NTE TVpe Number Polarity and Material 2363 NPN-Si High 2364 PNP-Si High Current Gen Purp Amp/Sw Compì to NTE2363 2365 NPN-Si High Vltg, Horiz Defl Output, Sw, tf = 0.2|is 2367 NPN-Si 2368 Case Style Diag.


    OCR Scan     		PDF NTE2363) NTE2416) OT-23 NTE2419) NTE2418) NTE2364)

    NTE55

    Abstract: nte59 NTE38
    Text: M a x im u m B re a k d o w n V o ltage C o lle c to r to B a se Volts C o lle c to r to E m itte r (V olts) E m itter to Base (Volts) Typical Forw ard C u rren t G ain M axim u m C o lle c to r Power D issip atio n (W atts) Case S tyle D iag. No. M axim u m


    OCR Scan     		PDF NTE388) NTE68 NTE388 NTE55 nte59 NTE38

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan     		PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr