PNP 9012 Search Results

PNP 9012 Result Highlights (5)

Part	Manufacturer	Description
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
TTA2070	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini
TTA013	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-120 V / IC=-2.5 A / hFE=120~240 / VCE(sat)=-0.32 V / tf=65 ns / PW-Mini
TTA011	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini
TPCP8606	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PS-8

PNP 9012 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
PNP 9012 SMD Abstract: 9012 SOT-23 9012 pnp transistor smd TRANSISTOR SMD 9012 9012 SMD 9012 SMD PNP 9012 transistor sot-23 9012 SOT23 smd transistor 9012 CMBT9012 Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CMBT 9012 SOT-23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION	Original	OT-23 100uA, C-120 PNP 9012 SMD 9012 SOT-23 9012 pnp transistor smd TRANSISTOR SMD 9012 9012 SMD 9012 SMD PNP 9012 transistor sot-23 9012 SOT23 smd transistor 9012 CMBT9012	PDF
PNP 9012 SMD Abstract: 9012 pnp transistor smd Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CMBT 9012 SOT-23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION	Original	OT-23 100uA, C-120 PNP 9012 SMD 9012 pnp transistor smd	PDF
TRANSISTOR SMD A4 L pnp Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CMBT 9012 SOT-23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION	Original	OT-23 100uA, C-120 TRANSISTOR SMD A4 L pnp	PDF
PNP 9012 SMD Abstract: transistor cs 9012 9012 SMD 9012 SOT-23 data sheet transistor 9012 transistor smd marking BA RE transistor CS 9012 PNP Transistor 9012 G transistor smd marking AS sot-23 Transistor 9012 G 22 C Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR TRANSISTOR CMBT 9012 SOT-23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Base Voltage	Original	ISO/TS16949 OT-23 100uA, C-120 PNP 9012 SMD transistor cs 9012 9012 SMD 9012 SOT-23 data sheet transistor 9012 transistor smd marking BA RE transistor CS 9012 PNP Transistor 9012 G transistor smd marking AS sot-23 Transistor 9012 G 22 C	PDF
Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR TRANSISTOR CMBT 9012 SOT-23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3	Original	OT-23 100uA, C-120	PDF
TRANSISTOR SMD MARKING CODE spt Abstract: ta114 Marking Code For SMD Devices SMD PNP MARKING DE PDTA114 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA114T series PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open Product specification Supersedes data of 1999 Apr 13 2003 Apr 10 Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open	Original	PDTA114T 01-May-99) TRANSISTOR SMD MARKING CODE spt ta114 Marking Code For SMD Devices SMD PNP MARKING DE PDTA114	PDF
9013b Contextual Info: 9012B 9012B Silicon PNP Epitaxial Transistor Description :The 9012B is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to 9013B Chip Appearance Chip Size 490umx490um Chip Thickness 210±20um	Original	9012B 9012B 9013B 490um 490um 110um 110um 9013b	PDF
Contextual Info: 9012A 9012A Silicon PNP Epitaxial Transistor Description: The 9012A is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to 9013A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um	Original	440um 440um 110um 110um -50mA -500mA	PDF
9012 Unisonic Abstract: 9012L- Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9012 PNP SILICON EPITAXIAL TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION  1 FEATURES TO-92 High total power dissipation. 625mW High collector current. (-500mA) *Excellent hFE linearity	Original	625mW) -500mA) 9012L-x-T92-B 9012G-x-T92-B 9012L-x-T92-K 9012G-x-T92-K QW-R201-0at QW-R201-029 9012 Unisonic 9012L-	PDF
transistor c 9012 Abstract: PNP 9012 9012 pnp transistor 9012 9013 9012 transistor BR 9013 Transistor 9012 G NPN 9012 BR 9012 9012 transistor Contextual Info: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As	Original	20MHz transistor c 9012 PNP 9012 9012 pnp transistor 9012 9013 9012 transistor BR 9013 Transistor 9012 G NPN 9012 BR 9012 9012 transistor	PDF
9012 pnp Abstract: UTC 9013 9012 transistor data sheet transistor 9012 Transistor 9012 G PNP 9012 transistor c 9012 9012 pnp transistor 9013 transistor Transistor 9013 Contextual Info: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES High total power dissipation. 625mW High collector current. (-500mA) Excellent hFE linearity Complementary to UTC 9013 1 TO-92 1:EMITTER	Original	625mW) -500mA) QW-R201-029 9012 pnp UTC 9013 9012 transistor data sheet transistor 9012 Transistor 9012 G PNP 9012 transistor c 9012 9012 pnp transistor 9013 transistor Transistor 9013	PDF
9012 Unisonic Contextual Info: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES High total power dissipation. 625mW High collector current. (-500mA) Excellent hFE linearity Complementary to UTC 9013 1 TO-92 1:EMITTER	Original	625mW) -500mA) -50mA -500mA -500mA -10mA QW-R201-029 9012 Unisonic	PDF
transistor c 9012 Abstract: PNP 9012 9012 br 9012 transistor 9012 9013 NPN 9012 transistor npn c 9013 9012 pnp 9012 transistor transistor 9013 H NPN Contextual Info: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As	Original	20MHz transistor c 9012 PNP 9012 9012 br 9012 transistor 9012 9013 NPN 9012 transistor npn c 9013 9012 pnp 9012 transistor transistor 9013 H NPN	PDF
transistor c 9012 Abstract: PNP 9012 BR 9012 9012 transistor 9012 pnp transistor transistor 9012 9013 NPN 9012 9012 Transistor 9012 G transistor s 9012 Contextual Info: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As	Original	20MHz transistor c 9012 PNP 9012 BR 9012 9012 transistor 9012 pnp transistor transistor 9012 9013 NPN 9012 9012 Transistor 9012 G transistor s 9012	PDF

transistor c 9012 Abstract: PNP 9012 9012 transistor 9012 9013 NPN 9012 9012 pnp 9012 transistor br 9012 9012 pnp transistor 9013 transistor pnp Contextual Info: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As	Original	20MHz transistor c 9012 PNP 9012 9012 transistor 9012 9013 NPN 9012 9012 pnp 9012 transistor br 9012 9012 pnp transistor 9013 transistor pnp	PDF
Transistor-9013 h Abstract: Transistor 9013 transistor BR 9013 9012 pnp data sheet transistor 9012 transistor c 9012 PNP 9012 data sheet NPN 9013 Transistor 9012 G 9013 transistor Contextual Info: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As	Original		PDF
PNP 9012 Abstract: IC 9012 9012 pnp 9012 pnp transistor 9012 PDF IC 9012 transistors equivalent 9012 Contextual Info: BC558LT1 9012 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to BC548LT1 * Collector Current :Ic= -500mA * High Total Power Dissipation :Pc=225mW 1. 2.4 1.3 ABSOLUTE MAXIMUM RATINGS at Ta=25	Original	BC558LT1 BC548LT1 -500mA 225mW -50mA -500mA PNP 9012 IC 9012 9012 pnp 9012 pnp transistor 9012 PDF IC 9012 transistors equivalent 9012	PDF
PNP 9012 Abstract: transistor BR 9013 9012 pnp 9012 pnp transistor 9012 transistor transistor BR 9012 NPN 9012 br 9012 9012 9012 npn Contextual Info: HN 9012 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, G and H, according to its DC current gain. As complementary type	OCR Scan	103mA PNP 9012 transistor BR 9013 9012 pnp 9012 pnp transistor 9012 transistor transistor BR 9012 NPN 9012 br 9012 9012 9012 npn	PDF
9012LT1 Contextual Info: SHENZHEN ICHN ELECTRONICS TECH. CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 1. BASE 9012LT1 2. EMITTER TRANSISTOR（ PNP ） 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : -0.5 A Collector-base voltage	Original	OT-23 OT--23 9012LT1 -100A -100A -500mA -20mA 30MHz 9012LT1	PDF
transistor BR 9012 Abstract: IC 9012 BR 9012 PNP 9012 9012 9012 pnp PDF IC 9012 9012 pnp transistor 50/transistor BR 9012 Contextual Info: 9012 PNP SILICON TRANSISTOR TO 92 FEATURES Power dissipation PCM : 0.625 Collector current ICM : -0.5 Collector-base voltage V BR CBO : -40 1.EMITTER W Tamb=25 2.BASE 1 2 3 3.COLLECTOR A V Tamb=25 ELECTRICAL CHARACTERISTICS Parameter unless otherwise specified	Original	-500mA -100mA 30MHz transistor BR 9012 IC 9012 BR 9012 PNP 9012 9012 9012 pnp PDF IC 9012 9012 pnp transistor 50/transistor BR 9012	PDF
ksd999 Contextual Info: SAMSUNG ELECTRONICS INC bGE D 7 ^ 4 1 4 2 0011525 fib3 • SMGK TRANSISTORS FUNCTION GUIDE TO-92 Type Transistors Continued Condition Device and Polarity NPN KSP66Û2 2N4401 KSP2222A 2N4400 2N3903 2N3904 KSP20 KSC1330 KSD471A PNP 2N4403 KSP2907 2N4402 2N3905	OCR Scan	KSP66Ã 2N4401 KSP2222A 2N4400 2N3903 2N3904 KSP20 KSC1330 KSD471A KSD227 ksd999	PDF
LB-50 Abstract: lb50 Contextual Info: M C C SOT-23 P lastic-E n cap su late T ra n s is to rs ^ 1 .B A S E S 9012LT1 TR A N SISTO R PNP 2 .EMITTER 3 .C O L L E C T O R FEATURES '¿h Kb Power dissipation Pcm : 0.3 W ( Tamb=25"C ) . 2.4 . Collector current 13 « \|CM : -0.5 A Collector-base voltage	OCR Scan	OT-23 9012LT1 S9012LT1 S9012LT1 LB-50 lb50	PDF
9013G Abstract: 9012 transistor sot-23 9012 pnp MMBT9012LT1 Contextual Info: MMBT9012LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 1W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 1. Complement to 9013G Collector Current :Ic=-500mA 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.4 0.95 0.95 2.9 1.9 High Total Power Dissipation Pc=225mW	Original	MMBT9012LT1 OT-23 9013G -500mA 225mW 9013G 9012 transistor sot-23 9012 pnp MMBT9012LT1	PDF
9013G Abstract: 9012 SOT-23 9012 pnp MMBT9012LT1 9012 transistor sot-23 transistor SOT23 PD j6 9012 SOT23 MMBT901 Contextual Info: MMBT9012LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 1W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 1. Complement to 9013G Collector Current :Ic=-500mA 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.4 0.95 0.95 2.9 1.9 High Total Power Dissipation Pc=225mW	Original	MMBT9012LT1 OT-23 9013G -500mA 225mW 9013G 9012 SOT-23 9012 pnp MMBT9012LT1 9012 transistor sot-23 transistor SOT23 PD j6 9012 SOT23 MMBT901	PDF

PNP 9012 Search Results

PNP 9012 Result Highlights (5)

PNP 9012 Datasheets Context Search

PNP 9012 SMD

PNP 9012 SMD

TRANSISTOR SMD A4 L pnp

PNP 9012 SMD

TRANSISTOR SMD MARKING CODE spt

9013b

9012 Unisonic

transistor c 9012

9012 pnp

9012 Unisonic

transistor c 9012

transistor c 9012

transistor c 9012

Transistor-9013 h

PNP 9012

PNP 9012

9012LT1

transistor BR 9012

ksd999

LB-50

9013G

9013G