PNP POWER TRANSISTOR TO220 Search Results

NPN EBC SOT-23

Abstract: SOT-23 EBC NPN transistor ECB TO-92
Contextual Info: Power Transistor & Small Signal Transistor Power Transistor & Small Signal Transistor MAXIMUM RATINGS NPN BVCEO BVCES IC PC PIN STYLE PNP BVCBO BVCES BVCEV V (V) (A) (W) 123 PJP110A PNP -20 -12 -10 75 BCE TO-220 PJP168A PNP -20 -13 -18 100 BCE TO-220 PJ13003

2SC1419

Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.

2sB101

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1017 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SB1017 is a PNP silicon epitaxial transistor suited to be used in power amplifier applications. „ FEATURES * Low base drive

Contextual Info: TIP120 Series PNP/NPN Silicon Power Transistor P b Lead Pb -Free 1 FEATURES: * Medium Power Complementary silicon transistors 2 3 1. BASE 2. COLLECTOR 3. EMITTER * TIP120,121,122 Darlington TRANSISTOR (NPN) * TIP125,126,127 Darlington TRANSISTOR (PNP) TO-220

BUS48AP

Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

HIGH VOLTAGE PNP POWER TRANSISTOR

Abstract: MJE5852 l5 transistor PNP
Contextual Info: MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY APPLICATIONS: SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS ■ DESCRIPTION The MJE5852 is manufactured using high voltage PNP multiepitaxial technology for high switching

MJE5852

Contextual Info: MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY APPLICATIONS: ■ SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS DESCRIPTION The MJE5852 is manufactured using high voltage PNP multiepitaxial technology for high switching

BU108

Abstract: 2SD1816 BDX54 motorola MJ3000 MJD42C equivalent BU326 BU100 2N5631
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon PNP Transistor 3.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

Contextual Info: BDW94/C PNP Epitaxial Silicon Transistor BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93 and BDW93C Respectively 1 1.Base Absolute Maximum Ratings Symbol VCBO VCEO TO-220 2.Collector

MJE5852

Contextual Info: MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY APPLICATIONS: SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS ■ DESCRIPTION The MJE5852 is manufactured using High

POWER TRANSISTOR TO-220

Abstract: MJE9780 hFE is transistor to220 transistor TO-220 Outline Dimensions
Contextual Info: MJE9780 PNP SILICON POWER TRANSISTOR 3.0 AMPS, 150 VOLTS JEDEC TO-220 CASE DESCRIPTION: The Central Semiconductor MJE9780 is a PNP power transistor packaged in a TO-220 case, designed for CRT output applications. MAXIMUM RATINGS TA=25°C unless otherwise noted

MJE5852

Contextual Info: MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY • ■ ■ APPLICATIONS: SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS ■ 3 1 DESCRIPTION The MJE5852 is manufactured using High

D45H2

Abstract: pnp low saturation voltage fast switching transistor
Contextual Info: UTC D45H2 PNP EXPITAXIAL SILICON TRANSISTOR PNP EXPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC D45H2 is a general purpose power application and switching. FEATURE 1 *Low Collector-Emitter Saturation Voltage VCE sat =-1v(MAX)@-15A *Fast Switching Speeds

D65H2

Contextual Info: UTC D65H2 PNP EXPITAXIAL SILICON TRANSISTOR PNP EXPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC D65H2 is a general purpose power application and switching. FEATURE 1 *Low Collector-Emitter Saturation Voltage VCE sat =-1v(MAX)@-15A *Fast Switching Speeds

SB2202

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD. SB2202 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR  DESCRIPTION The UTC SB2202 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.

Contextual Info: UTC D45H2 PNP EXPITAXIAL SILICON TRANSISTOR PNP EXPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC D45H2 is a general purpose power application and switching. FEATURE 1 *Low Collector-Emitter Saturation Voltage VCE sat =-1v(MAX)@-15A *Fast Switching Speeds

D45H1

Abstract: D45H10 D45H2 D45H4 D45H7
Contextual Info: UTC D45H2 PNP EXPITAXIAL SILICON TRANSISTOR PNP EXPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC D45H2 is a general purpose power application and switching. FEATURE 1 *Low Collector-Emitter Saturation Voltage VCE sat =-1v(MAX)@-15A *Fast Switching Speeds

D45H2

Contextual Info: UTC D45H2 PNP EXPITAXIAL SILICON TRANSISTOR PNP EXPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC D45H2 is a general purpose power application and switching. FEATURE 1 *Low Collector-Emitter Saturation Voltage VCE sat =-1v(MAX)@-15A *Fast Switching Speeds

D65H2

Contextual Info: UTC D65H2 PNP EXPITAXIAL SILICON TRANSISTOR PNP EXPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC D65H2 is a general purpose power application and switching. FEATURE 1 *Low Collector-Emitter Saturation Voltage VCE sat =-1v(MAX)@-15A *Fast Switching Speeds

D1485

Abstract: 2SA1720
Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1720 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SA1720 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM

MJ4502 EQUIVALENT

Abstract: BU108 BU806 Complement BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ4502 High-Power PNP Silicon Transistor 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — hFE = 25 – 100 @ IC = 7.5 A

MJE1123

Contextual Info: MOTOROLA Order this document by MJE1123/D SEMICONDUCTOR TECHNICAL DATA M JE1123 Bipolar Power PNP Low Dropout Regulator Transistor PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS The MJE1123 is an applications specific device designed to provide low -dropout

2SA1742

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1742 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed ORDERING INFORMATION switching and features a high hFE at low VCE sat . This transistor is ideal

2SB857

Abstract: R217
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB857 PNP SILICON TRANSISTOR SILICON PNP TRANSISTOR „ DESCRIPTION Low frequency power amplifier. Lead-free: 2SB857L Halogen-free:2SB857G „ ORDERING INFORMATION Normal 2SB857-x-T6C-K 2SB857-x-TA3-T 2SB857-x-TN3-R Order Number