PNP TRANSISTOR 300V SOT23 Search Results

Contextual Info: UTC MMBTA92 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 2 1 FEATURES * High Collector-Emitter voltage: VCEO=-300V

Contextual Info: UTC MMBTA92 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 1 FEATURES * High Collector-Emitter voltage: VCEO=-300V UTC MMBTA92

SOT-23 2D

Abstract: sot 23 2D pnp transistor 300v sot23 MMBTA92 MPSA92 MPSA93
Contextual Info: UTC MMBTA92 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 2 1 FEATURES * High Collector-Emitter voltage: VCEO=-300V

MMBTA92G

Abstract: 102 TRANSISTOR MMBTA92 MMBTA92-AE3-R MMBTA92L MMBTA92L-AE3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA92 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR „ DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. „ FEATURES * High Collector-Emitter voltage: VCEO=-300V

MMBTA92G

Abstract: MMBTA92 MMBTA92-AE3-R MMBTA92L MMBTA92L-AE3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA92 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR „ DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. „ FEATURES * High Collector-Emitter voltage: VCEO=-300V

AL 102 pnp transistor

Abstract: transistor marking SA p sot-23 MMBTA92 MMBTA92-AE3-R MMBTA92L MMBTA92L-AE3-R SOT-23 2D transistor 5w marking 2D
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA92 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR 3 DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 1 2 FEATURES SOT-23 * High Collector-Emitter voltage: VCEO=-300V

M2A transistor

Abstract: M2A MARKING SOT-23 sot23 m2a SBT42 SBT92 M2A SOT23
Contextual Info: SBT92 Semiconductor PNP Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage : VCEO=SBT92 : -300V • Complementary pair with SBT42 Ordering Information Type NO. Marking SBT92 Package Code

M2A transistor

Abstract: K 2078 SBT42F SBT92 SBT92F
Contextual Info: SBT92F Semiconductor PNP Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage : VCEO=SBT92 : -300V • Complementary pair with SBT42F Ordering Information Type NO. Marking SBT92F Package Code

MMBTA92

Contextual Info: MMBTA92 PNP HIGH VOLTAGE TRANSISTOR 300 Volts VOLTAGE POWER 225 mWatts FEATURES • PNP silicon, planar design • High voltage max. 300V • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, Method 2026

Contextual Info: MMBTA92 PNP HIGH VOLTAGE TRANSISTOR 300 Volt VOLTAGE POWER 225 mWatt 0.006 0.15 MIN. FEATURES 0.120(3.04) • PNP silicon, planar design 0.110(2.80) • High voltage (max. 300V) • Lead free in compliance with EU RoHS 2011/65/EU directive • Green molding compound as per IEC61249 Std. .

Contextual Info: SBT92F PNP Silicon Transistor Descriptions PIN Connection • High voltage application • Telephone application 3 Features 1 • Collector-Emitter voltage : VCEO=SBT92 : -300V • Complementary pair with SBT42F 2 SOT-23F Ordering Information Type NO. SBT92F

M2A transistor

Contextual Info: SBT92 PNP Silicon Transistor Descriptions PIN Connection • High voltage application • Telephone application 3 Features 1 • Collector-Emitter voltage : VCEO=SBT92 : -300V • Complementary pair with SBT42 2 SOT-23 Ordering Information Type NO. Marking

BTPA92N3

Abstract: SOT-23 2D transistor marking 2d ghz
Contextual Info: Spec. No. : C308N3-H Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTPA92N3 Description • High breakdown voltage. BVCEO=-300V • Low collector output capacitance. • Ideal for chroma circuit.

MMBTA42LT1

Abstract: MMBTA92LT1
Contextual Info: M M B TA 9 2 LT 1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 HIGH VOLTGE TRANDIDTOR 1 Complement to MMBTA42LT1 High Collector-Emitter Voltage:Vcbo=-300V Collector current:Ic=-500mA o Collector Dissipation:Pc=225mW Ta=25 C 2 1. 1.BASE 2.EMITTER 3.COLLECTOR

Contextual Info: MMBTA92 PNP HIGH VOLTAGE TRANSISTOR 300 Volts VOLTAGE POWER 225 mWatts SOT-23 Unit：inch mm 0.120(3.04) • High voltage (max. 300V) 0.110(2.80) • Lead free in comply with EU RoHS 2002/95/EC directives. MECHANICAL DATA 0.103(2.60) • Green molding compound as per IEC61249 Std. . (Halogen Free)

PNP marking VA sot-23

Contextual Info: MMBTA92 PNP HIGH VOLTAGE TRANSISTOR 300 Volts VOLTAGE POWER SOT-23 225 mWatts Unit：inch mm 0.120(3.04) • High voltage (max. 300V) 0.110(2.80) • Lead free in comply with EU RoHS 2002/95/EC directives. MECHANICAL DATA 0.103(2.60) • Green molding compound as per IEC61249 Std. . (Halogen Free)

Contextual Info: c Transistor minil^eel' SOT23 SOT23 Case NPN minllfecl 4 - A _Iyi»_ — jA t u n in g s mtnlBasT Balk Ic h FE @lc mA M in -M a x VCE - - - - 60~ 20- 100 p c s VCEO V 73-8400 73-8410 73-0010 73-0918 53-8400 53-8410 53-0010 53-0918 40V 25mA 40V 25mA 25V 15V 350mA

IRF9210

Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF

transistor case To 105

Abstract: CMPTA42 pnp transistor 300v sot23 marking code C1DE C1DE CMPTA42E CMPTA92 CMPTA92E
Contextual Info: Central CMPTA42E NPN CMPTA92E PNP ENHANCED SPECIFICATION SILICON COMPLEMENTARY HIGH VOLTAGE TRANSISTOR TM Semiconductor Corp. Description: The Central Semiconductor CMPTA42E & CMPTA92E types are Enhanced versions of the CMPTA42 & CMPTA92 complementary surface

18w sot23 transistor

Abstract: pnp transistor 300v sot23 FMMT92CSM
Contextual Info: FMMT92CSM GENERAL PURPOSE PNP TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm inches 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) FEATURES 0.76 ± 0.15 (0.03 ± 0.006)

IFRZ44

Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
Contextual Info: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541

Contextual Info: FMMT92CSM GENERAL PURPOSE PNP TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm inches 0.31 rad. (0.012) 3 2 FEATURES 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004)

FMMT92CSM

Abstract: 18w sot23 transistor
Contextual Info: FMMT92CSM GENERAL PURPOSE PNP TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm inches 0.31 rad. (0.012) 3 2 FEATURES 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA92 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR  3 DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier.  2 1 SOT-23 FEATURES JEDEC TO-236