PNP-SI DARLINGTON POWER AMP Search Results

2N6282

Abstract: DS3636 motorola K 626 2N6283 2N6284 2N6286 2N6287 MJH6282 MJH6283 MJH6284
Contextual Info: PNP NPN MJH6282 MJH6285 MJH6283 MJH6286 MJH6284 MJH6287 DARLINGTON COMPLEMENTARY SILKX3N POWER TRANSSTC RS . . . designed ing motor e Similar for general-purpose control PopularFJPN 2N6282, to the PNP 2N6285, @ Rugged 2N6286, RBSOA SI Monolithic amplifier

2n6039

Abstract: 2N6036
Contextual Info: SGS-THOMSON 2N6036 2N6039 Œfî D^Q K ô |[LI©fl©RflB(Si COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • 2N6036 IS A SGS-THOMSON PREFERRED SALESTYPE ■ COMPLEMENTARY PNP - NPN DEVICES ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS

2SB1093

Abstract: 04 ow
Contextual Info: SEC l i T / '> 1J =1 > h Si l i con Tr ansi st or i i O 2SB1093 PNPx t a > '> * .? PNP Silicon Epitaxial Darlington Transistor Low Frequency Power Amplifier, Low Speed Switching ftW m / P A C K A G E DIMENSIONS 2 S B 1 0 9 3 iin ij > h y Y ÿ y ì? x 9 -e,

SK9458

Abstract: SK9446 SK9447 SK9455A SK9452 SK9448 10 amp npn darlington power transistors sk9453 SK9444 SK9450
Contextual Info: THOMSON/ DISTRIBUTOR B IPO LAR TRANSISTORS 5ÛE D • TQ2tjfl73 0 0 0 4 0 3 7 TST com. Maximum Ratings TCE Type Device Polarity & M aterial Breakdown Voltages Application 'complementary device type SK9443 PNP/Si Preamp Input Circuits - NPN/Si Microwave Low-Noise Amp for CATV,

NTE135A

Abstract: NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159
Contextual Info: REPLACEMENT SEMICONDUCTOR KITS NTEKCOM SERIES REPLACEMENT SEMICONDUCTOR KITS Each kit is housed in a 30–drawer cabinet and comes with an NTE Semiconductor Technical Guide and Cross Reference. All devices provided in these kits are also available separately.

SK3180

Abstract: SK3181A SK3220 SK3183A SK3219 SK3197 SK3182 SK3188A SK3191 SK3201
Contextual Info: THOMSON/ DISTRIBUTOR BIPOUR TRANSISTORS SäE D • T05t.â?3 0 0 0 4 0 1 7 Obi ■ TCSK cw t . Maximum Ratings TCE Type Breakdown Voltages Device Polarity & Material Application Ccomplementary device type SK3179B Device Power Dissipata Collector Current

SK3893

Abstract: sk3896 SK3936 SK3935 SK3862 SK3865A SK93 sk3948 SK3897 sk3895
Contextual Info: •^THOflSON/ K B DISTRIBUTOR BIPOLAR TRANSISTORS SflE D cont ■ . =105^073 0 0 0 4 5 5 5 13fl ■ TCSK Maximum Ratings TCE Type Device Polarity & Material Breakdown Voltages Application Ccomplementary device type Device Power Dissipata Collector Current

NTE34

Abstract: 2039P nte33 nte50 nte157
Contextual Info: Maximum Breakdown Voltage Maximum Collector Power Dissipation Watts Maximum Collector Current (Amps) Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) lc BVcbo BV c e o BVebO l>FE Pd *T 1 160 160 6 100 Min 0.9 15 Min 4 15 160

SK3858

Abstract: SK3854 SK3466 SK3747 SK3836 SK3718 SK3839 SK3861 SK3859 SK3722
Contextual Info: THOriSON/ D I S T R I B U T O R SflE D ÏI] com. BIPOLAR TRANSISTORS • T05bfl?3 0 0 0 4 5 5 3 3fc.S ■ TCSK Maximum Ratings TCE Type Device Polarity & Material Breakdown Voltages Application ‘complementary device type SK3715 PNP/Si *SK3275 AF Driver & Output Stage, FM Brdcst Band

BDT62B

Abstract: SB 62A diode BDT62 BDT62 B BDT62A bdt63a BDT63 BDT63B BDT63C TRANSISTORE
Contextual Info: J BDT62; -62A BDT62B; 62C ^ SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. T 0 -2 2 0 plastic envelope. N-P-N complements are BDT63,

BDX62

Abstract: transistor BDX62 BDX63A bdx62a BDX62C BDX62B BDX63 BDX63B BDX63C fxs 100 10
Contextual Info: N AMER PHILIPS/DISCRETE I I b b S B ' m 5SE D o o n i N ? 3 • BDX62; 62A BDX62B; 62 3 T - 33- 3 Í SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications: TO-3 envelope, N-P-N complements are BDX63, BDX63A,

nte280

Abstract: nte291
Contextual Info: BI-POL AR TRANSISTORS NTE Type Number Polarity and Material Description and Application 275 PNP-Si 278 NPN-Si 280 NPN-Si 280MP NPN-Si PNP-Si Darlington Pwr Amp Switch Compl to NTE274 Broad Band RF Amp, CATV/MATV Amp Audio Amp Output (Compl to NTE281) Matched Pair of NTE280

SK3239

Abstract: sk3025 transistor RCA transistors SK3180 T056 SK3181A 2N5037 Thomson Power Transistor 1975 transistor T009 SK3052
Contextual Info: THOMSON/ DISTRIBUTOR 2bE D • T □ E h Ö 73 O G G H O S T I ■ Bipolar Transistors / y jy j MAXIMUM RATINGS TCE Type 2SD822 Breakdown Voltages Device Device Collector Material & Power Current Base Collector- Collector- Emitter- Polarity Dissipate. Continuous

Contextual Info: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) Case Style Diag. No. Maximum Collector Current (Amps) BVCeo BVEbo

NPN S2e

Abstract: Darlington pair pnp npn DARLINGTON 10A NTE281 nte275 NTE280 DARLINGTON darlington low power 268 darlington darlington NPN 50 amp
Contextual Info: N T E E L E C T R O N I C S INC S2E D • b M B l S S 6} D 0 Q 2 b D l SQ5 * N T E T—33—01 Maximum Breakdown Voltage Maximum CoRector Power Dissipation Watts NTE TVpe Number Polarity and Material Description and Application Case Style Diag. No. Maximum

Contextual Info: J _ TIP140 TIP141 TIP142 V SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. SOT-93 plastic envelope. P-N-P complements are TIP145, TIP146

BDT65

Abstract: IOM10 BDT64 BDT64A BDT64B BDT64C BDT65B TRANSISTORE MSA-06
Contextual Info: J BDT65; 65A BDT65B; 65C SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic envelope. PNP complements are BDT64; BDT64A; BDT64B and BDT64C.

TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT

Contextual Info: TIP125 TIP126 TIP127 _ / V SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. T O -220 plastic envelope. N-P-N complements are TIP120, TIP121

TF 450

Contextual Info: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Case Style Diag. No. Maximum Collector Current (Amps) BVceo BVebo h FE Pd fT T0218

BDT65

Abstract: bdt65c bdt64
Contextual Info: BDT64;- 64A BDT64B; 64C PHILIPS INTERNATIONAL SbE D • 711002b 0043274 T1S MPHIN T -1 3 '7 / SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. T0-220 plastic envelope. NPN complements are BDT65,

BOX53C

Abstract: BOX53 box54 BDX54 BDX53B BDX53 BDX53A BDX53C BDX54A BDX54B
Contextual Info: ŒkMOS PEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS NPN BDX53 BDX53A BDX53B BDX53C .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageVceo<sus = 4 5 V Min) - BDX53.BDX54

d45e3

Abstract: d45e2 d45e
Contextual Info: HARRIS SEMICOND SECTOR SbE ]> • 43G2271 Ü040Ô30 T'iS HHAS D45E Series File Number 2354 t 10-Ampere P-N-P Darlington Power Transistors -3 7 -2 -7 TERMINAL DESIGNATIONS Complementary to the D44E Series -40, -60, and -80 Volts, 50 Watts Gain of 1000 at -5 A

2SB1272

Contextual Info: K =j > y 7. $ /Transistors 2SB1272 2SB1272 PNP > V □ > b 7 > 'J 7 s $ X Epitaxial Planar PNP Silicon Transistor Darlington 1£Jil>j£S^iS,liffl/Low Freq. Power Amp. • ÿH fi’+ iiE I/'D im e n s io n s (Unit : mm) • ft* V -U 1) >V h FE r 2) $ > ! * - $ • < * - KP*3*to

sanken high power audio amplifier

Abstract: STD01N STD01P G746 SC102 YG6260 sanken audio
Contextual Info: STD01N and STD01P Darlington Transistors for Audio Amplifiers Features and Benefits Description ▪ Built-in temperature compensation diodes ▪ High power 100 W handling in a small package (TO-3P), for minimized heat sink requirements ▪ Built-in drivers and temperature compensation diodes,