POLYFET RF DEVICES Search Results
POLYFET RF DEVICES Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BLM15PX181BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 180ohm POWRTRN |
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BLM15PX221SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 220ohm POWRTRN |
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BLM21HE601SH1L | Murata Manufacturing Co Ltd | FB SMD 0805inch 600ohm POWRTRN |
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DLW21SH670HQ2L | Murata Manufacturing Co Ltd | CMC SMD 67ohm 320mA POWRTRN |
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BLM15PX800BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 80ohm POWRTRN |
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POLYFET RF DEVICES Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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LK141
Abstract: 60W VHF TV RF amplifier
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Original |
ISO9000 5208A 50Vdc 4Q2012. LK141 60W VHF TV RF amplifier | |
Contextual Info: polyfet rf devices F1027 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" ^ process features gold metal for greatly extended |
OCR Scan |
F1027 | |
Contextual Info: polyfet rf devices F1170 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" process features gold metal for greatly extended |
OCR Scan |
F1170 1110AvenidaAcaso, | |
Contextual Info: polyfet rf devices F1006 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" *"* process features gold metal for greatly extended |
OCR Scan |
F1006 1110Avenida | |
Contextual Info: polyfet rf devices F1020 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1,11 process features gold metal for greatly extended |
OCR Scan |
F1020 72410m D000135 | |
Contextual Info: polyfet rf devices F2046 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet',tm process features gold metal for greatly extended |
OCR Scan |
F2046 \GS12V 1110AvenidaAcaso, 724100e | |
Contextual Info: polyfet rf devices F3002 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" 1111 process features gold metal for greatly extended |
OCR Scan |
F3002 7241GCn 1110AvenidaAcaso, | |
Contextual Info: polyfet rf devices F1019 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended |
OCR Scan |
F1019 1110Avenida | |
Contextual Info: polyfet rf devices F1240 PATENTED GOLD METAUZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" 1111 process features gold metal for greatly extended |
OCR Scan |
F1240 1110AvenidaAcaso, 7241am | |
Contextual Info: polyfet rf devices F2201S PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"ta process features gold metal for greatly extended |
OCR Scan |
F2201S | |
Contextual Info: polyfet rf devices F1077 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"tm process features gold metal for greatly extended |
OCR Scan |
F1077 1110AvenidaAcaso, 7241am | |
Contextual Info: polyfet rf devices F2003 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"ta process features gold metal for greatly extended |
OCR Scan |
F2003 VGS13V | |
Contextual Info: polyfet rf devices F1001C PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended |
OCR Scan |
F1001C 1110AvenidaAcaso, | |
Contextual Info: polyfet rf devices F1174 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" ^ process features gold metal for greatly extended |
OCR Scan |
F1174 C0D0G17Ã 7241DD1 | |
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Contextual Info: polyfet rf devices F1065 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended |
OCR Scan |
F1065 72410CH D0DD151 | |
Contextual Info: polyfet rf devices F1002 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1“1 process features gold metal for greatly extended |
OCR Scan |
F1002 | |
Contextual Info: polyfet rf devices F1001 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended |
OCR Scan |
F1001 | |
Contextual Info: polyfet rf devices F1260 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1“ process features gold metal for greatly extended |
OCR Scan |
F1260 724100T | |
Contextual Info: polyfet rf devices F2202S PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended |
OCR Scan |
F2202S 1110AvenidaAcaso, | |
Contextual Info: polyfet rf devices F1207 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended |
OCR Scan |
F1207 060QfeOâ | |
Contextual Info: polyfet rf devices F2001S PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended |
OCR Scan |
F2001S 724100e | |
Contextual Info: polyfet rf devices F1410 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended |
OCR Scan |
F1410 DDD02D7 | |
Contextual Info: polyfet rf devices F1063 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended |
OCR Scan |
F1063 1110AvenidaAcaso, | |
F3003Contextual Info: POLYFET R F DEVICES BbE D • VamOM ODQQQScJ ^ F3003 POLYFET RF DEVICES General Description PATENTED GOLD METALIZED SILICON . RF POWER MOSFET Silicon vertical DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown, |
OCR Scan |
F3003 |