POWER MOSFET SO8 FL Search Results

FDS7066ASN3

Abstract: FDS7066N3
Contextual Info: FDS7066ASN3 30V N-Channel PowerTrench SyncFET General Description Features The FDS7066ASN3 is designed to replace a single SO8 FLMP MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a

NTMFS4849NT1G

Abstract: NTMFS4849NT3G
Contextual Info: NTMFS4849N Power MOSFET 30 V, 71 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package

4946n

Abstract: mosfet 4946n
Contextual Info: NTMFS4946N Power MOSFET 30 V, 100 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package

NTMFS4846N

Abstract: NTMFS4846NT1G NTMFS4846NT3G
Contextual Info: NTMFS4846N Power MOSFET 30 V, 100 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThermally Enhanced SO8 Package

4946n

Contextual Info: NTMFS4946N Power MOSFET 30 V, 100 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package

NTMFS4849NT1G

Abstract: NTMFS4849NT3G
Contextual Info: NTMFS4849N Power MOSFET 30 V, 71 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThermally Enhanced SO8 Package

4851N

Abstract: NTMFS4851NT1G NTMFS4851NT3G
Contextual Info: NTMFS4851N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package

4846N

Abstract: NTMFS4846N NTMFS4846NT1G NTMFS4846NT3G mosfet 4846n
Contextual Info: NTMFS4846N Power MOSFET 30 V, 100 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package

4851N

Abstract: NTMFS4851NT1G NTMFS4851NT3G
Contextual Info: NTMFS4851N Power MOSFET 30 V, 66 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThermally Enhanced SO8 Package

Contextual Info: NTMFS4946N Power MOSFET 30 V, 100 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package

Contextual Info: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V

to220 pcb footprint

Abstract: "thermal via" PCB D2PAK LFPAK footprint Renesas LFPAK footprint POWERPAK SO8 TO220 HEATSINK DATASHEET thermal PCB D2PAK sot669 lfpak LFPAK package
Contextual Info: LFPAK The Toughest Power-SO8 The evolution of Power MOSFET packages Typical TO220 construction TO220 is the ‘original’ through-hole power package. It is suitable for through-hole mounting and low-cost wave soldering. It also provides very low thermal resistances when mounted to a suitable heatsink.

ITF86182SK8T

Abstract: MS-012AA TB370
Contextual Info: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V

Contextual Info: NTMFS4846N Power MOSFET 30 V, 100 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package

NTMFS4849NT1G

Abstract: NTMFS4849NT3G
Contextual Info: NTMFS4849N Power MOSFET 30 V, 71 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package

simulation models

Abstract: ITF86182SK8T MS-012AA TB370
Contextual Info: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET January 2000 File Number 4797.2 Features • Ultra Low On-Resistance [ /Title - rDS ON = 0.0115Ω, VGS = −10V Packaging (ITF86 - rDS(ON) = 0.016Ω, VGS = −4.5V SO8 (JEDEC MS-012AA)

4851N

Abstract: 488AA
Contextual Info: NTMFS4851N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package

4846N

Contextual Info: NTMFS4846N Power MOSFET 30 V, 100 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package

Contextual Info: NTMFS4849N Power MOSFET 30 V, 71 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package

ITF86172SK8T

Abstract: MS-012AA TB370
Contextual Info: ITF86172SK8T Data Sheet 10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET January 2000 File Number 4809.1 Features • Ultra Low On-Resistance [ /Title - rDS ON = 0.016Ω, VGS = −10V Packaging (HUF7 - rDS(ON) = 0.023Ω, VGS = −4.5V SO8 (JEDEC MS-012AA)

Contextual Info: NTMFS4849N Power MOSFET 30 V, 71 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package

4851N

Abstract: NTMFS4851NT1G NTMFS4851NT3G
Contextual Info: NTMFS4851N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package

Contextual Info: NTMFS4851N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package

4846N

Contextual Info: NTMFS4846N Power MOSFET 30 V, 100 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package