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    SOT669 Price and Stock

    Fischer Elektronik GmbH & Co KG FK-251-06-LF-PAK-LF-PAK-(SOT-669)

    Fans, Blower, Thermal Management
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    DigiKey FK-251-06-LF-PAK-LF-PAK-(SOT-669) Bulk 100
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    Fischer Elektronik GmbH & Co KG FK-251-06-LF-PAK-SOT-669-(LF-PAK)

    Fans, Blower, Thermal Management
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    DigiKey FK-251-06-LF-PAK-SOT-669-(LF-PAK) Bulk 100
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    Fischer Elektronik GmbH & Co KG FK-250-08-LF-PAK-LF-PAK-(SOT-669)

    Fans, Blower, Thermal Management
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    DigiKey FK-250-08-LF-PAK-LF-PAK-(SOT-669) Bulk 100
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    Fischer Elektronik GmbH & Co KG FK-250-08-LF-PAK-SOT-669-(LF-PAK)

    Fans, Blower, Thermal Management
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    DigiKey FK-250-08-LF-PAK-SOT-669-(LF-PAK) Bulk 100
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    Fischer Elektronik GmbH & Co KG FK-250-10-LF-PAK-LF-PAK-(SOT-669)

    Fans, Blower, Thermal Management
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    DigiKey FK-250-10-LF-PAK-LF-PAK-(SOT-669) Bulk 100
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    • 100 $0.7598
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    Find more SOT669 price and stock on Findchips.com

    SOT669 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SOT669 NXP Semiconductors Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads Original PDF
    SOT669 NXP Semiconductors Footprint for reflow soldering SOT669 Original PDF
    SOT669_115 NXP Semiconductors LFPAK; Tape reel SMD; standard product orientation 12NC ending 115 Original PDF

    SOT669 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sot669

    Abstract: PH5330E 12334
    Text: PH5330E TrenchMOS enhanced logic level FET Rev. 01 — 09 January 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package using TrenchMOS™ technology. 1.2 Features


    Original     		PDF PH5330E M3D748 OT669 sot669 PH5330E 12334

    PH3230

    Abstract: SOT669-LFPAK sot669 package
    Text: PH3230 N-channel enhancement mode field-effect transistor M3D748 Rev. 03 — 25 June 2003 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH3230 in SOT669 (LFPAK).


    Original     		PDF PH3230 M3D748 OT669 PH3230 SOT669-LFPAK sot669 package

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT60603PY 60 V, 3 A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60603NY.


    Original     		PDF PHPT60603PY OT669 LFPAK56) PHPT60603NY. AEC-Q101

    PHPT60603NY

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY


    Original     		PDF PHPT60603NY OT669 LFPAK56) PHPT60603PY AECQ-101 PHPT60603NY

    sot669 package

    Abstract: POWERSO-8 MO-235
    Text: Package outline Plastic single-ended surface-mounted package LFPAK; Power-SO8 ; 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b X c 1/2 e A (A 3) A1 C θ L detail X 2.5 y C 5 mm scale DIMENSIONS (mm are the original dimensions)


    Original     		PDF OT669 OT669 MO-235 sot669 package POWERSO-8

    PH3230S

    Abstract: No abstract text available
    Text: PH3230S N-channel TrenchMOS logic level FET M3D748 Rev. 02 — 23 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package. Product availability: PH3230S in SOT669 LFPAK .


    Original     		PDF PH3230S M3D748 PH3230S OT669

    Untitled

    Abstract: No abstract text available
    Text: Package outline Plastic single-ended surface-mounted package LFPAK56; Power-SO8 ; 4 leads E A2 A SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w b X c A 1/2 e A (A3) A1 C q L detail X y C θ 5 mm 8° scale 0° Dimensions (mm are the original dimensions)


    Original     		PDF LFPAK56; OT669 MO-235 sot669

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY


    Original     		PDF PHPT61003NY OT669 LFPAK56) AEC-Q101

    sot669 footprint

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY


    Original     		PDF PHPT61003NY OT669 LFPAK56) PHPT61003PY AEC-Q101 sot669 footprint

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61003PY 100 V, 3A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY


    Original     		PDF PHPT61003PY OT669 LFPAK56) PHPT61003NY AEC-Q101

    sot669 footprint

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 10 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY


    Original     		PDF PHPT60603NY OT669 LFPAK56) PHPT60603PY AECQ-101 sot669 footprint

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 3 February 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY


    Original     		PDF PHPT61003NY OT669 LFPAK56) PHPT61003PY AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61002NYC 100V, 2 A NPN high power bipolar transistor 9 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC


    Original     		PDF PHPT61002NYC OT669 LFPAK56) PHPT61002PYC

    MO-235

    Abstract: SOT669 sot669 package
    Text: PDF: 2003 Feb 05 Philips Semiconductors Package outline Plastic single-ended surface mounted package Philips version LFPAK ; 4 leads A2 A E SOT669 C c2 b2 L1 E1 mounting base D1 D H L2 1 2 3 4 X e w M A b c 1/2 e A (A 3) A1 C θ L detail X 2.5 y C 5 mm scale


    Original     		PDF OT669 MO-235 MO-235 SOT669 sot669 package

    SOT669

    Abstract: PH2925U MO-235 MO-235 FOOTPRINT
    Text: PH2925U TrenchMOS ultra low level FET Rev. 01 — 02 May 2003 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PH2925U in SOT669 LFPAK .


    Original     		PDF PH2925U M3D748 PH2925U OT669 SOT669 MO-235 MO-235 FOOTPRINT

    SOT669

    Abstract: sot669 package lfpak outline A2 diode LFPAK LFPAK package LFPAK package 5
    Text: PDF: 2001 Aug 14 Philips Semiconductors Package outline Plastic single-ended surface mounted package LFPAK ; 4 leads SOT669 D A2 D1 A1 b1 mounting base HE E 1 2 3 4 e b c A 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 b b1


    Original     		PDF OT669 SOT669 sot669 package lfpak outline A2 diode LFPAK LFPAK package LFPAK package 5

    so8 footprint

    Abstract: sot669 package SO8 package PSMN026-80YS sot669 PSMN012-100YS PSMN1R2-25YL PSMN1R3-30YL PSMN1R5-25YL PSMN1R7-30YL
    Text: New Trench 6 MOSFETs in a Power-SO8 package 25 V to 100 V MOSFETs in Power-SO8 We’ve extended our range of Trench 6 MOSFETs with new devices at 60 V and 100 V in the LFPAK SOT669 package. NXP leads the way with its range of Trench 6 MOSFETs in LFPAK (Loss Free PAcKage). By combining Trench 6 silicon


    Original     		PDF OT669) PSMN5R5-60YS) so8 footprint sot669 package SO8 package PSMN026-80YS sot669 PSMN012-100YS PSMN1R2-25YL PSMN1R3-30YL PSMN1R5-25YL PSMN1R7-30YL

    sot669

    Abstract: PH3230
    Text: PH3230 N-channel enhancement mode field-effect transistor M3D748 Rev. 01 — 7 February 2002 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH3230 in SOT669 (LFPAK)


    Original     		PDF PH3230 M3D748 OT669 PH3230 sot669

    SOT1023

    Abstract: lfpak sot1023 sot669 footprint LFPAK footprint so8 footprint PSMN7R0-30YL PSMN1R2-25YL PSMN1R3-30YL PSMN3R0-30YL PSMN3R5-30YL
    Text: Nine new Trench 6 MOSFETs in a Power-SO8 package The world’s first < 1 mΩ Power-SO8 MOSFETs at 25 V We’ve extended our range of Trench 6 MOSFETs with nine new devices at 25 V, 30 V, 40 V and 80 V in the LFPAK SOT669 and SOT1023 package. NXP leads the way with its range of Trench 6 MOSFETs in


    Original     		PDF OT669 OT1023) PSMN1R2-25YL) high-efficien84 SOT1023 lfpak sot1023 sot669 footprint LFPAK footprint so8 footprint PSMN7R0-30YL PSMN1R2-25YL PSMN1R3-30YL PSMN3R0-30YL PSMN3R5-30YL

    SOT669

    Abstract: MO-235 sot669 package
    Text: Package outline Philips Semiconductors Plastic single-ended surface mounted package LFPAK ; 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b X c 1/2 e A (A 3) A1 C θ L detail X y C 2.5 5 mm scale DIMENSIONS (mm are the original dimensions)


    Original     		PDF OT669 MO-235 SOT669 MO-235 sot669 package

    LFPAK footprint

    Abstract: PH2920 sot669 lfpak
    Text: PH2920 N-channel enhancement mode field-effect transistor M3D748 Rev. 01 — 13 June 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH2920 in SOT669 (LFPAK).


    Original     		PDF PH2920 M3D748 OT669 PH2920 LFPAK footprint sot669 lfpak

    PH3230

    Abstract: No abstract text available
    Text: PH3230 N-channel enhancement mode field-effect transistor M3D748 Rev. 02 — 5 September 2002 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH3230 in SOT669 (LFPAK).


    Original     		PDF PH3230 M3D748 OT669 PH3230

    sot669

    Abstract: PH5330 09391
    Text: PH5330 N-channel enhancement mode field-effect transistor M3D748 Rev. 01 — 07 February 2002 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH5330 in SOT669 (LFPAK)


    Original     		PDF PH5330 M3D748 OT669 PH5330 sot669 09391

    PH2520U

    Abstract: 11406
    Text: PH2520U TrenchMOS ultra low level FET Rev. 01 — 02 May 2003 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PH2520U in SOT669 LFPAK .


    Original     		PDF PH2520U M3D748 PH2520U OT669 11406