POWER MOSFETS TO 204AA Search Results

FRM6758H

Abstract: FRM6758D FRM6758M FRM6758R
Contextual Info: Radiation-Hardened MOSFETs File N um b er 2171 FRM6758M, FRM6758D FRM6758R, FRM6758H Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad Si 2 x 1012 Neutrons N-CHANNEL ENHANCEMENT MODE 9 A, 200 V rDs(on) = 0.4 Q D Features: • ■

irf630

Abstract: IRF230 12N20 f630 IRF630-633 IRF231 IRF631 IRF632 IRF633 MTP12N18
Contextual Info: FAIRCHILD S E M I C O ND UC TO R_ I FAIRCHILD 34^7.4 005787'! „ MTP12N18/12N20 T N-Channe! Power MOSFETs, 12 A, 150-200 V A Schlumberger Company Power And Discrete Division Description rO-204AA TO-220AB RF230 RF231 RF232 RF233 IRF630 IRF631

MTM2P45

Abstract: MTM15N50 mtm2n45 MTM2P50 MTM6N90 MTM2N85 MTP3N80 MTM1N100 IRF450 MTM6N60
Contextual Info: POWER TRANSISTORS — TMOS METAL continued li Metal TMOS Product MOSFETs — TQ-204AA TMOS TO-204 (Formerly TO-3) CASE 1-04 and CASE 1-05 3 ‘ Indicates P-C hannel MOTOROLA EUROPEAN MASTER SELECTION GUIDE 3-9

Contextual Info: NATL This N-Channel Power MOSFETs Continued 2N6755 IRF130 IRF131 IRF132 By IRF133 Its IRF530 (71 IRF532 2N6757 2N6758 IRF230 IRF231 TC = 100-C (A) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-220 (37) TO-220 (37)

IRF232

Abstract: IRF233
Contextual Info: FIT FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. IRF232,233 8.0 AMPERES 200,150 VOLTS

MTP20N10

Abstract: 1RF531
Contextual Info: NATL N-Channel Power MOSFETs Continued 2N67S5 2N6756 IRF130 IRF132 IRF133 IRF530 S 1-6 IRF532 IRF533 MTP20N10 2N6757 IRF230 IRF231 lD @ TC = 25 'C (A) •rD Tc = 100-C (A) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-2Û4AA (42) TO-204AA

Contextual Info: NATL N-Channel Power MOSFETs Continued IRF732 IRF733 MTP5N35 2N6761 2N6762 IRF431 IRF830 IRF831 IRF833 TO-220 (37) TO-220 (37) TO-220 (37) TO-220 (37) TO-2Û4AA (42) TO-2Û4AA (42) TO-2Û4AA (42) TO-2Û4AA (42) T0-204AA (42) TO-2Û4AA (42) TO-220 (37) TO-220

IRF430

Contextual Info: IRF430,431 D86DR2,R1 FUir FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. 4.5 AMPERES 500, 450 VOLTS

Contextual Info: FRM9240D, FRM9240R, FRM9240H 7A, -200V, 0.720 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 7A, -200V, RDS on = 0.720Q. TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

Contextual Info: FRM9250D, FRM9250R, FRM9250H 16A, -200V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 16A, -200V, RDS on = 0.300S1 TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

Contextual Info: FRM430D, FRM430R, FRM430H 3A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.50S1 TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

4N50

Abstract: IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 DE I 34L.TL7L} D O a ? i n IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD B H O H B H B A Schlumberger Company Power And Discrete Division Description T—39—11 TO-204AA TO-22QAB

Contextual Info: FRM130D, FRM130R, FRM130H 14A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package TO-204AA • 14A, 100V, RDS on = 0.180£i • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

T10N5

Abstract: IRF452 IRF453 DM 48
Contextual Info: FIT IRF452,453 12 AMPERES 500, 450 VOLTS Rd S ON = 0.5 n HELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability.

250V 10A TF 106

Contextual Info: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 10A, 500V, RDS on = 0.600£i TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

Contextual Info: FRM9140D, FRM9140R, FRM9140H 11 A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11 A, -100V, RDS on = 0.300S1 TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

MTM20N08

Abstract: MTM35N06 IRF141 IRF143 MTM10N06 MTM55N10 MTM35N05 MTM60N05 IRF150 MTM10N08
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 rDS(on) Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08

MTP3055A

Abstract: MTM12N06 mtp25n06 MTM20N08 irf150 MTH8P20 MTM35N05 MTP2P45 MTM10N05 BUZ11
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 rDS(on) Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08

MTM20N08

Abstract: MTP2P45 MTM35N05 IRF123 IRF150 MTM10N08 MTM12N08 MTM12P08 MTM25N08 MTM55N08
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 rDS(on) @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08

1E14

Abstract: 2E12 2N7274D 2N7274H 2N7274R
Contextual Info: REGISTRATION PENDING Currently Available as FRM230 D, R, H 2N7274D, 2N7274R 2N7274H March 2001 Features Radiation Hardened N-Channel Power MOSFETs Package • 8A, 200V, RDS(on) = 0.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: y*Rg*s FRM9230D, FRM9230R, FRM9230H 4A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 4A, -200V, RDS on = 1.30£i TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

Contextual Info: y*Rg*s FRM230D, FRM230R, FRM230H 8A, 200V, 0.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 8A, 200V, RDS on = 0.50£i TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

Contextual Info: FRM9250D, FRM9250R, FRM9250H 16A, -200V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 16A, -200V, RDS on = 0.300Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot

1E14

Abstract: 2E12 2N7274D 2N7274H 2N7274R
Contextual Info: REGISTRATION PENDING Currently Available as FRM230 D, R, H 2N7274D, 2N7274R 2N7274H December 2001 Features Radiation Hardened N-Channel Power MOSFETs Package • 8A, 200V, RDS(on) = 0.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts