POWER SUPPLY PK100 Search Results

hcpl 7806

Abstract: CPOL-EUE5-10 CPOL-EUE2-5 R-EU_M1206 C-EUC1206 capacitor 10MF working of ic1 7806 7806 voltage regulator FUSE SH22,5A C-EU075-032X103
Contextual Info: AND8293/D Implementing an LCD TV Power Supply with the NCP1396A, NCP1605, and NCP1027 http://onsemi.com Prepared by Roman Stuler Introduction Timer Based Fault Protection This document provides a detailed description of the implementation of an LCD TV power supply. The LDC TV

C3607

Abstract: 100-PIN IDT77155 IDT77V400 IDT77V500 IDT79R36100 IDT79RV3041 IDT79RV4640 PN100-1
Contextual Info: SWITCHStARTM ATM CELL BASED NON-BLOCKING SINGLE CHIP SWITCH CONTROLLER PRELIMINARY IDT77V500 Integrated Device Technology, Inc. without derating for larger switch configurations • Industrial temperature range -40° C to +85° C available • Single +3.3V ± 0.3V power supply

Contextual Info: SWITCHStAR ATM CELL BASED NON-BLOCKING SINGLE CHIP PRELIMINARY IDT77V500 SWITCH CONTROLLER without derating for larger switch configurations • Industrial temperature range -40° C to +85° C available • S ingle+3.3V ± 0.3V power supply • Available in a 100-pin Thin Plastic Quad Flat Pack

FUSE SH22,5A

Abstract: CPOL-EUE2-5 atx power supply schematic dc 600 watts C-EUC1206 600 watt smps schematic tv lcd Schematic Power Supply smd zener diode color code 1 1uF CPOL-EUE2.5-6 C10 TDC 210-4A C-EU075-032X103
Contextual Info: TND316/D Rev. 3, March-07 220 W LCD TV Power Supply Reference Design Featuring NCP1396 and NCP1605 Documentation 1 2007 ON Semiconductor. Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated with the use and/or commercialization of this

schematic impulse sealer

Abstract: qfp 64 0.4 mm pitch land pattern Rotron pk100 power supply XC4013E-PQ240 EFTEC-64 XC4010E-PQ208 MO-151-AAN-1 PK100 land pattern for TSOP 2 86 PIN
Contextual Info: Packages and Thermal Characteristics: High-Reliability Products R 0 5 PK100 v1.0 June 15, 2000 Package Information Inches vs. Millimeters The JEDEC standards for PLCC, CQFP, and PGA packages define package dimensions in inches. The lead spacing is specified as 25, 50, or 100 mils (0.025", 0.050" or 0.100").

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

MCache

Abstract: PBSRAM IDT71F432 IDT71F432S66 IDT71F432S75
Contextual Info: FEATURES: • • • • • • • • • • Uses IDT's Fusion Memory technology 66 and 75 MHz speed grades 3-1-1-1 Pipelined Burst Read 3-1-1-1 Pipelined Burst Write 3-1-1-1-1-1-1-1. extended pipelined operation Refresh overhead consumes less than 0.5% of cycles

AZ 280 chip

Contextual Info: Integrated Device Technology, Inc. 32K x 32, 3.3V SYNCHRONOUS SRAM WITH 3.3V/2.5V PIPELINED OUTPUTS AND INTERLEAVED/LINEAR BURST COUNTER FEATURES: PRELIMINARY IDT71V532 The IDT71V532 SRAM contains write, data, address, and control registers. Internal logic allows the SRAM to generate

1ZI1

Abstract: pk100-1 PK1001
Contextual Info: í:jW>s\í> ^dt Integrated De\/ice Technology, Inc. 32K x 32 MCache SYNCHRONOUS PIPELINED CACHE RAM FEATURES: • Uses IDT's Fusion Memory technology • 66 and 75 MHz speed grades • 3-1-1-1 Pipelined Burst Read • 3-1-1-1 Pipelined Burst Write • 3-1-1-1-1-1-1-1. extended pipelined operation

71V632

Abstract: IDT71V632
Contextual Info: 64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V632/Z with full support of the Pentium and PowerPC™ processor interfaces. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz.

AZ 280 chip

Abstract: AZ 280 memory IDT71V632
Contextual Info: Integrated Device Technology, Inc. 64K x 32, 3.3V SYNCHRONOUS SRAM WITH 3.3V/2.5V PIPELINED OUTPUTS AND INTERLEAVED/LINEAR BURST COUNTER FEATURES: PRELIMINARY IDT71V632 The IDT71V632 SRAM contains write, data, address, and control registers. Internal logic allows the SRAM to generate

AZ 280 chip

Abstract: IDT71V632
Contextual Info: Integrated Device Technology, Inc. 64K x 32, 3.3V SYNCHRONOUS SRAM WITH 3.3V/2.5V PIPELINED OUTPUTS AND INTERLEAVED/LINEAR BURST COUNTER FEATURES: • 64K x 32 memory configuration • Supports high performance system speed - up to 133 MHz 4.5 ns Clock-to-Data Access in Pipelined Mode

AW3632

Contextual Info: PRELIMINARY IDT71V519 64K x 18, 3.3V SYNCHRONOUS BURST SRAM WITH 3.3V/2.5V FLOW-THROUGH OUTPUTS Integrated Device Technology, Inc. FEATURES: • 64K x 18 memory configuration • Supports high performance system speed - up to 75 MHz 8 ns Clock-to-Data Access .

AZ 280 chip

Contextual Info: Integrated Device Technology, Inc. 32K x 32, 3.3V SYNCHRONOUS SRAM WITH 3.3V/2.5V PIPELINED OUTPUTS AND INTERLEAVED/LINEAR BURST COUNTER FEATURES: • 32K x 32 memory configuration • Supports high performance system speed - up to 133 MHz 4.5ns Clock-to-Data Access in Pipelined Mode

IDT71F432

Abstract: IDT71F432S66 IDT71F432S75
Contextual Info: PRELIMINARY IDT71F432 32K x 32 Fusion Memory SYNCHRONOUS PIPELINED CACHE RAM Integrated Device Technology, Inc. FEATURES: performance of SRAM with the cost structure of DRAM. It is fundamentally compatible with standard PBSRAM, with additional features to accommodate the internal DRAM operation

Contextual Info: 32K x 32 Fusion Memory SYNCHRONOUS PIPELINED CACHE RAM FEATURES: performance of SRAM with the cost structure of DRAM. It is fundamentally compatible with standard PBSRAM, with addi­ tional features to accommodate the internal DRAM operation of the memory. These additional features are defined so that

PBSRAM

Abstract: IDT71F432 IDT71F432S66 IDT71F432S75
Contextual Info: FEATURES: • • • • • • • • • • Uses IDT's Fusion Memory technology 66 and 75 MHz speed grades 3-1-1-1 Pipelined Burst Read 3-1-1-1 Pipelined Burst Write 3-1-1-1-1-1-1-1. extended pipelined operation Refresh overhead consumes less than 0.5% of cycles

Contextual Info: Evaluation Board User Guide UG-472 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Evaluating the AD5142A Digital Potentiometer FEATURES GENERAL DESCRIPTION Full featured evaluation board in conjunction with low

Contextual Info: Evaluation Board User Guide UG-470 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Evaluating the AD5143 Potentiometer FEATURES GENERAL DESCRIPTION Full featured evaluation board in conjunction with low

Contextual Info: Evaluation Board User Guide UG-469 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Evaluating the AD5144 Digital Potentiometer FEATURES GENERAL DESCRIPTION Full featured evaluation board in conjunction with low

UG471

Contextual Info: Evaluation Board User Guide UG-471 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Evaluating the AD5142 Digital Potentiometer FEATURES GENERAL DESCRIPTION Full featured evaluation board in conjunction with low

Contextual Info: 64K X 32 Fusion Memory SYNCHRONOUS CACHE RAM FEATURES: . performance of SRAM with the cost structure of DRAM. It is fundamentally compatible with standard PBSRAM, with addi­ tional features to accommodate the internal DRAM operation of the memory. These additional features are defined so that

71V532

Abstract: IN3616
Contextual Info: 32K x 32, 3.3V SYNCHRONOUS SRAM WITH 3.3V/2.5V PIPELINED OUTPUTS AND INTERLEAVED/LINEAR BURST COUNTER FEATURES: PRELIMINARY IDT71V532 The IDT71V532 SRAM contains write, data, address, and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until

Contextual Info: PRELIMINARY IDT71V519 64K X 18, 3.3V SYNCHRONOUS BURST SRAM WITH 3.3V/2.5V FLOW-THROUGH OUTPUTS FEATURES: • • • • • • • • 64K x 18 m em ory configuration Supports high performance system speed - up to 75 M H z 8 ns C lock-to-D ata Access .