POWER TRANSISTOR 3055 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

transistor 3055

Abstract: 3055 transistor 2N3055 power transistor 3055 3055 n3055 3055 npn e 3055 t transistor C200 L 3055
Contextual Info: 2 N 3055 NPN Transistor for high-power A F output stages 2 N 3 0 5 5 is a single-diffused N P N silicon transistor in a case 3 A 2 D IN 4 1 8 7 2 T O -3 . The collector is electrically connected to the case. The transistor is particularly designed for use iri high -pow er A F output stages and in stabilized pow er supplies.

3055

Abstract: 3055 npn A 3055 transistor 3055
Contextual Info: 4 S i» 2 N 3055 'V Diffundierter Silizium-NPN-Mesa-Leistungstransistor Diffused Silicon NPN Mesa Power Transistor Anwendungen: Schalter hoher Leistung und NF-Endstufen Applications: High power switching and AF-output stages Besondere M erkm ale: Features:

Contextual Info: bbS3T31 0030550 T5T H A P X N AUER PHILIPS/DISCRETE Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: TIP2955 TIP3055 COMPLEMENTARY SILICON POWER TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The TIP3055 is a silicon Epitaxial-Base Planar NPN transistor mountend in TO-218 plastic package. It is intented for power switching

transistor Amp 3055L

Abstract: 3055L 3055L transistor marking 3055l amp 3055l motorola an569 thermal MMFT3055EL MOTOROLA TRANSISTOR T2 2N3904 AN569
Contextual Info: MOTOROLA Order this document by MMFT3055EL/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT3055EL Motorola Preferred Device SOT–223 for Surface Mount MEDIUM POWER LOGIC LEVEL TMOS FET

mj2955

Contextual Info: 2N3055 MJ2955 COMPLEMENTARY SILICON POWER TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES . COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series

MC7812Ck

Abstract: MC7805CK MC7815CK MC7824CK MC7808CK MC7806CK LM7805k LM7805KC MC7815CK TO3 LM7812KC
Contextual Info: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE TEM PERATURE Tc 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range

rca 2n3055

Abstract: SN3055 2n3055 2N3055 series voltage regulator 2n3055 voltage regulator RCA-2N3055 2N3055 RCA 2n3055 collector characteristic curve power transistor 2n3055 RCA 2N3055 transistor
Contextual Info: Ïïî 38750.81 G E SOLID STATE DË“| 3 f l 7 S a â l 0 1E OQiTJòd 17352 D 5 | \~ T ~ 3 3 - / 3 General-Purpose Power * 2N3055 File Number 1699 General-Purpose Power Transistor

mosfet L 3055 motorola

Abstract: L 3055 motorola mosfet L 3055 motorola 3055 3055 sot-223 2N3904 AN569 MMFT3055E MMFT3055ET1 MMFT3055ET3
Contextual Info: MOTOROLA Order this document by MMFT3055E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT3055E Motorola Preferred Device SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET

MOTOROLA 3055V

Abstract: 3055VL 3055V
Contextual Info: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD3055VL TMOS V Power Field Effect Transistor DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.18 OHM N-Channel Enhancement-Mode Silicon Gate

2SC3055

Abstract: E3 37497 2sc3055 transistor high power switching transistor
Contextual Info: FUJITSU MICROEL ECT RONICS 31E D E3 3?»H7b2 QQlbSbD a S F M I January 1990 i 9 i T - r 'T m!on1-1_ P R O D U C T P R O F I L E = ¥ FUJITSU - ' 2SC3055 Silicon High Speed Power Transistor DESCRIPTION Th e 2SC 3055 is a silicon NPN planar general purpose, high power switching tran*

MOTOROLA 3055V

Contextual Info: MOTOROLA Order this document by MTD3055V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD3055V TMOS V Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 12 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate

marking 3055l

Abstract: MMFT3055ELT1 amp 3055l 3055L
Contextual Info: Order this data sheet by MMFT3055ELT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancem ent Mode Silicon G ate TMOS E-FET SOT-223 for Surface Mount MMFT3055ELT1 Motorola Preferred Device This advanced E-FET is a TMOS power MOSFET designed to

CHM3055LXGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHM3055LXGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3.7 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-62/SOT-89 FEATURE

40872

Abstract: 40594 40636 300W TRANSISTOR AUDIO AMPLIFIER 2N2102 2N4036 2N5492 2N5495 2N6103 2N6111
Contextual Info: POWER TRANSISTOR TYPES FOR AUD IO -FREQ U ENC Y Power Output 16Q 6 .5 16 4n 18 45 Output Transistors 8Ì2 Imped. Circuit P -N -P 40980 (2N 6111) True Comp. 40816 (2N 5495) (2N 6269) 40817 (2N 6111) - Comp. Darlington BDX 33 2N6386 BDX 34 TA8201 - True Comp.

transistor 40410

Abstract: 40410 Transistor 300W TRANSISTOR AUDIO AMPLIFIER TRANSISTOR 40391 40410 40988 200W AMPLIFIER 40362 40636 TA8201
Contextual Info: POWER TRANSISTOR TYPES FOR AUD IO -FREQ U ENC Y Power Output 16Q 6 .5 16 4n 18 45 Output Transistors 8Ì2 Imped. Circuit P -N -P 40980 (2N 6111) True Comp. 40816 (2N 5495) (2N 6269) 40817 (2N 6111) - Comp. Darlington BDX 33 2N6386 BDX 34 TA8201 - True Comp.

3055e mos

Abstract: TK3055E STK3055E 3055E stk3055 3055EN TK3055
Contextual Info: SGS-THOMSON ir a u » K S S TK 3055E N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss R D S o n Id S TK3055E 60 V 0 .1 5 £1 13 A , „ „ , , , AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE

DA 2688

Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
Contextual Info: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data S heet MTD3055V TMOS V Power Field Effect Transistor DPAK for Surface Mount M o t o r o la P re fe rre d D e v ic e TMOS POWER FET 12 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate

C2688

Abstract: c2688 transistor 5257 transistor equivalent transistor TIP2955 br c2688 C-2688 c2688 L L72B tRANSISTOR c2688 TIP2955
Contextual Info: TEXAS INSTR {OPTO} 8961726 b5 TEXAS INSTR » F lfiT b lT S b D D 3b 3 62 C 3 6 9 9 8 OPTO TIP2955 P-N-P SILICON POWER TRANSISTOR JAN U ARY 1972 - REVISED OCTOBER 1984 • Designed for Complementary Use with TIP 3055 • 9 0 W at 2 5 ° C C a se Temperature

3055E

Abstract: D3055 atech
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TD 3055E T M O S IV N-C hannel E nhancem ent-M ode Pow er Field E ffect Transistor DPAK fo r Surface or Insertion M ount TM O S POWER FET 8 AMPERES This advanced " E " series o f TM O S p o w e r MOSFETs is

2n3055 collector characteristic curve

Abstract: 2N3055 curve
Contextual Info: T-33- 13 Power Transistors 2N3055 File Number HARRIS SEMICOND SECTOR 27E D • M302271 Q D l ^ b 1699 5 ■ HAS G eneral-Purpose Power Transistor Broadly A pplicable Devices for Industrial and Commercial Use Features: ■ H igh gain at high current ■ Low S aturation Voltage: V'cetsaf < 1.1 V, @ ic= 4 A, I b=0.4 A

2N7373

Abstract: 2N7373 transistor 2N5004
Contextual Info: INCH-POUND The documentation process conversion measures necessary to comply with this revision shall be completed by 28 March 1998 MIL-PRF-19500/613A 28 December 1997 SUPERSEDING MIL-S-19500/613 30 July 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,