POWER TRANSISTOR TRANSISTORS EQUIVALENTS Search Results

BUX48A

Abstract: BUX48 BUX48 ST ST IC date code marking JESD97 transistor bux48 bux48a st
Contextual Info: BUX48 BUX48A High voltage fast-switching NPN power transistors Features • NPN transistors ■ High voltage capability ■ High current capability ■ Fast switching speed 1 Applications 2 ■ Switching mode power supplies ■ Flyback and forward single transistor low power

BD241C

Abstract: BD241A BD242A BD242C JESD97
Contextual Info: BD241A BD241C NPN power transistors Features • . NPN transistors Applications ■ Audio, general purpose switching and amplifier transistors Description 1 The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain

bd237

Abstract: BD235 0016114E BD236 BD238 JESD97
Contextual Info: BD235 BD237 NPN power transistors Features • . NPN transistors Applications ■ Audio, power linear and switching application Description 3 The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain

BD241C

Abstract: BD241A
Contextual Info: BD241A BD241C NPN power transistors Features • . NPN transistors Applications ■ Audio, general purpose switching and amplifier transistors Description 1 The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain

D45 TRANSISTOR

Abstract: power bjt advantages and disadvantages transistor 412 BUV98 compatible buv48 equivalent an363 ST Power bipolar transistors Selection guide MTBF IGBT module power transistor IGBT Designers Manual
Contextual Info: APPLICATION NOTE POWER TRANSISTORS - DEVICES AND DATASHEETS by V. Sukumar ABSTRACT The purpose of this paper is to give a general overview of how to read a transistor specification. We will discuss bipolar transistors, power MOSFETs and IGBTs, and introduce some intelligent power

LDMOS

Abstract: LDMOS digital bipolar junction transistor "RF Power Transistors" mosfet high power rf ldmos AN1223 amplitude modulation applications
Contextual Info: AN1223 Application note RF power transistors: comparative study of LDMOS versus bipolar technology Introduction RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor yields superior

Contextual Info: BUX48 BUX48A High voltage fast-switching NPN power transistors Features • NPN transistors ■ High voltage capability ■ High current capability ■ Fast switching speed s ct u d o 1 Applications 2 ■ Switching mode power supplies ■ Flyback and forward single transistor low power

MC7812Ck

Abstract: MC7805CK MC7815CK MC7824CK MC7808CK MC7806CK LM7805k LM7805KC MC7815CK TO3 LM7812KC
Contextual Info: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE TEM PERATURE Tc 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range

2N5192

Abstract: 2N5191 2n5191 jan 0016114E 2N5195 JESD97
Contextual Info: 2N5191 2N5192 NPN power transistors Features • NPN transistors Applications ■ Linear and switching industrial equipment Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain

bd442

Abstract: BD440
Contextual Info: BD440 BD442 PNP power transistors Features • PNP transistors Applications ■ Linear and switching industrial equipment Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain

st bd441

Abstract: bd439 BD441 0016114E BD440 BD442 JESD97
Contextual Info: BD439 BD441 NPN power transistors Features • . NPN transistors Applications ■ Linear and switching industrial equipment Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain

TIP29A

Abstract: JESD97 TIP29C TIP30A TIP30C TIP29A applications
Contextual Info: TIP29A TIP29C NPN power transistors Features • . NPN transistors Applications ■ Audio, linear and switching applications Description 1 The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain

BD536

Contextual Info: BD533 BD535 BD537 BD534 BD536 Complementary power transistors Features • . BD533, BD535, and BD537 are NPN transistors Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain

Contextual Info: TIP29A TIP29C NPN power transistors Features • . NPN transistors Applications ■ Audio, linear and switching applications Description 1 The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain

NTC 220-11

Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
Contextual Info: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,

IGBTs Transistors

Abstract: igbts
Contextual Info: MÌO ^ Insulated Gate Bipolar Transistor IGBT Insulated Gate Bipolar Transistors (IGBTs from International Rectifier combine the characteristics of established HEXFET power MOSFETs with high-current, low saturation voltage capability of bipolar transistors, and the peak current capability of two larger

Contextual Info: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the • Medium Power Switching or Amplification Applications stringent requirements of Automotive Applications. •

Contextual Info: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications 

Contextual Info: BCP5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications 

2n5191 jan

Abstract: 2N5191
Contextual Info: 2N5191 2N5192 NPN power transistors Features • NPN transistors Applications ■ s ct Linear and switching industrial equipment u d o Description r P e The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain

BD241A

Abstract: BD241A-A BD241C JESD97
Contextual Info: BD241A-A NPN power transistor Features . • This device is qualified for automotive application ■ NPN transistor Applications ■ Audio, general purpose switching and amplifier transistors 1 3 TO-220 Description The devices are manufactured in Planar technology with “Base Island” layout. The

Contextual Info: BD241A-A NPN power transistor Features . • This device is qualified for automotive application ■ NPN transistor Applications ■ s ct u d o Audio, general purpose switching and amplifier transistors r P e 1 2 3 TO-220 Description The devices are manufactured in Planar

BD244C

Abstract: BD243C npn transistor bd243c complementary npn-pnp power transistors st bd243c JESD97 Transistor bd243c st bd244c morocco bd244c
Contextual Info: BD243C BD244C Complementary power transistors Features • . Complementary NPN-PNP devices Applications ■ Power linear and switching Description 1 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance

bd243c

Abstract: bd244c
Contextual Info: BD243C BD244C Complementary power transistors Features • . Complementary NPN-PNP devices Applications ■ Power linear and switching Description 1 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance