PQ26/20 POWER SUPPLY Search Results

BPQ26

Abstract: 25-1112CP BPQ32 PC44PQ50 PC44PQ32 BPQ50/50 FPQ-26 FPQ-35 FPQ-50 16-1114CP
Contextual Info: Ferrite Cores PQ Series For Power Supply PQ Cores A2 Type PQ20/16 PQ20/20 PQ26/20 PQ26/25 PQ32/20 PQ32/30 PQ35/35 PQ40/40 PQ50/50 2D Dimensions mm A1 20.5±0.4 20.5±0.4 26.5±0.45 26.5±0.45 32±0.5 32±0.5 35.1±0.6 40.5±0.9 50±0.7 A2 14±0.4 14±0.4

2m x 36

Contextual Info: = = = = •= ■ = IBM11D2360L IBM11E2360L 2M x 36 DRAM Module Features • Single 5V, ± 0.5V Power Supply • Low current consumption • All inputs & outputs are fully TTL & CMOS compatible • Fast Page Mode access cycle • Refresh Modes: RAS-Only and CBR

RIR AS3 ON

Contextual Info: IB M 1 1 D 1 3 6 0 L IB M 1 1 E 1 3 6 0 L 1 M x 3 6 D R A M Module Features • Single 5V, ± 0.5V Power Supply • Low current consumption • All inputs & outputs are fully TTL & CMOS compatible • Fast Page Mode access cycle • Refresh Modes: RAS-Only and CBR

IC 1496 function

Contextual Info: IBM11S2360NN IBM11S2360NL 2M x 36 SODIMM Module Features • 7 2 -P in S m all O utline D ual-In -Lin e M e m o ry M o du le • Perform ance: I rac RAS Access Time All inputs & outputs a re T T L & C M O S com patible Fast P a g e M o d e a c c e ss cycle

SL36T6A1M1C-A60

Abstract: pq26
Contextual Info: SL36T6A1M1C-A60 1M X 36 Bits DRAM SIMM with Fast Page Mode FPM FEATURES • Performance range: tRC tRAC tCAC 60ns 15ns • • • • • • • • GENERAL DESCRIPTION The SiliconTech SL36T6A1M1C-A60 is a 1MB x 36 bits Dynamic RAM (DRAM) Single In-line Memory Module (SIMM). The

edo dram 60ns 72-pin simm

Abstract: SL36S4B4M2F-A60 SL36T4B4M2F-A60
Contextual Info: SL36 S/T 4B4M2F-A60 4M X 36 Bits DRAM 72-Pin SIMM with Extended Data Out (EDO) and ECC FEATURES • Performance range: tCAC tRC tRAC 60ns 15ns • • • • • • • • GENERAL DESCRIPTION The SiliconTech SL36(S/T)4B4M2F-A60 is a 4M x 36 bits Dynamic RAM (DRAM) Single In-line Memory Module (SIMM).

Contextual Info: SL36 S/T 4B4M2C-Axx 4M X 36 BITS DRAM SIMM Memory Module FEATURES • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC SL…-A60 60ns 15ns 110ns SL…-A70 70ns 20ns 130ns The SiliconTech SL36(S/T)4B4M2C-Axx is a 4MB x 36 bits

Contextual Info: SL36 S/T 4B8M2C-Axx 8M X 36 BITS DRAM SIMM Memory Module FEATURES • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC SL…-A60 60ns 15ns 110ns SL…-A70 70ns 20ns 130ns The SiliconTech SL36(S/T)4B8M2C-Axx is a 8MB x 36 bits

jeida dram 88 pin

Contextual Info: IBM11J2360BL 2M x 36 5.0V IC D R A M C ard Features • Industry Standard 88Pin IC DRAM Card • Performance: -70 I rac RAS Access Time 70ns tcAC CAS Access Time 29ns Ua Access Time From Address 46ns I rc Cycle Time 130ns tpc Fast Page Mode Cycle Time 50ns

Contextual Info: IBM11S1360NN IBM11S1360NL 1M x 36 SODIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 -70 ÏRAC RAS Access Time 60ns 70ns tcAG CAS Access Time 15ns 20ns t/VA Access Time From Address 30ns 35ns tRC Cycle Time 110ns 130ns

IBM 1Mx4

Contextual Info: IB M 1 1 D 1 4 8 0 B A IB M 1 1 E 1 4 8 0 B A 1M x 36 ECC-on-SIMM Features Single-error-correct SEC high-speed ECC • 72-Pin JEDEC-Standard Single In-Line Memory Module algorithm • Performance: Single 5V ± 0.25V Power Supply All inputs & outputs are fully TTL & C M O S

8mx32 simm 72 pin

Abstract: 32MB SIMM
Contextual Info: IBM11D2360ED2M x 36 QC10/10, 5.0V, Sn/Pb. IBM11E2360ED2M x 36 QC10/10, 5.0V, Au . IBM11D4360B IBM11D8360B IBM11E4360B IBM11E8360B 4M/8M x 36 DRAM Module Features • High Performance CMOS process • Single 5V, ± 0.5V Power Supply • All inputs & outputs are fully TTL & CMOS

Contextual Info: IBM11D2480BA IBM11E2480BA 2M x 36 ECC-on-SIMM 4Features • 72 -P in J E D E C -S ta n d a rd S ing le In-Line M e m o ry M o du le • P erform ance: S ingle-error-correct S E C high-speed E C C algorithm Single 5 V 0 .2 5 V P ow er Supply All inputs & outputs are fully T T L & C M O S

Contextual Info: IBM11S1360BL IM x 36 SODIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 -70 60ns 70ns tcAC CAS Access Time 15ns 20ns Iaa Access Time From Address 30ns 35ns I rac RAS Access Time tflc Cycle Time 110ns 130ns tpc Fast Page Mode Cycle Time 40ns

PQ2620

Abstract: pq26
Contextual Info: ELECTRICAL CHARACTERISTICS: Inductance: 1500uH+/-25% @10kHz,0.1V Turns Ratio: 1-6/7-12 : 1:5+/-5% @10kHz,0.1V. Capacity : 95w 7 1 pr i 31.0 max s ec 12 6 FEATURES: Isolation: pri to sec: 1000Vac @50Hz,2Sec wdgs to core: 1000Vac @50Hz,2Sec THT Style SCHEMATIC

Contextual Info: IB M 1 1J 4 3 6 0 D L 4M X 36 5.0V IC D R A M C ard Features • Industry S tan dard 8 8 P in IC D R A M Card • Single 5.0V, ± 0 .2 5 V P ow er S u pply • P erform ance: • All inputs buffered excep t R A S and DATA inputs • Multiple R A S inputs for x 1 8 or x 3 6 selectability

Contextual Info: IB M 1 1 D 8 4 8 0 B G IB M 1 1 E 8 4 8 0 B G 8M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance: I • Single-error-correct SEC high-speed ECC algorithm • Single 5.0V ± 0.25V Power Supply • All inputs & outputs are fully TTL & CMOS

jeida dram 88 pin

Contextual Info: IBM11J8360BL 8M X 36 5.0V IC DRAM Card Features • Industry Standard 88Pin IC DRAM Card • Performance: • • • • • • Single 5.0V, ± 0.25V Power Supply All inputs buffered except RAS and DATA inputs Multiple RAS inputs for x18 or x36 selectabillty

Contextual Info: IB M 1 1 D 4 4 8 0 B IB M 1 1 E 4 4 8 0 B 4M x 36 ECC-on-SIMM Features Single-error-correct SEC high-speed ECC algorithm Single 5.0V ± 0.25V Power Supply All inputs & outputs are fully TTL & C M O S compatible Fast Page Mode access cycle Refresh Modes: RAS-Only and CBR

Contextual Info: IBM11D4480BA4M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E4480BA4M x 36 EOS11/11, 5.0V, Au. IBM11D4480B IBM11E4480B 4M x 36 ECC-on-SIMM Features • Single-error-correct SEC high-speed ECC algorithm • Single 5.0V ± 0.25V Power Supply • All inputs & outputs are fully TTL & CMOS

1E83

Abstract: fast 555
Contextual Info: 5 = = — = T= IB M 11D8 3 6 0 B IB M 1 1E83 6 0 B P relim in ary 8M x 36 D R A M M odule Features • 72-Pin JEDEC Standard Single-ln-Line Memory Module • Performance: 1rac RAS Access Time 'CAC CAS Access Time •m Access Time From Address >RC Cycle Time

Contextual Info: IBM11D8480B IBM11E8480B 8M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance: Single-error-correct SEC high-speed ECC algorithm Single 5.0V ± 0.25V Power Supply All inputs & outputs are fully TTL & CMOS compatible

E1338

Contextual Info: IBM11J8360DL 8M X 36 5.0V IC D R A M C ard Features • Industry S tan dard 8 8 P in IC D R A M Card • Single 5.0V , ± 0 .2 5 V P ow er S u pply • Perform ance: • All inputs buffered excep t R A S and DATA inputs • Multiple R A S inputs for x l 8 or x 3 6 selectabiiity

jeida 88 pin memory card

Abstract: dram card 60 pin jeida dram 88 pin dram 88 pin jeida 88 pin ic dram dram card 30 pin 5v dram 88 pin card
Contextual Info: Application Note 88 Pin 1CDRAM Card Characteristics Basic Architecture DRAM Addressing Effects A listing of the 88 Pin 1C DRAM Card Pin Assign­ ments is on page 1370 . IC DRAM cards are designed to provide for a multi­ tude of potential DRAM chip depth granularities as