PQFN Search Results

3006S

Abstract: 10-6327-01
Contextual Info: N-Channel Dual CoolTM Power Trench SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench®

D47F

Abstract: IRFH8311 PQFN footprint d020d
Contextual Info: PD - 97735C IRFH8311PbF VDS Vgs max RDS on max 30 V ± 20 V 2.1 (@VGS = 10V) (@VGS = 4.5V) 3.2 Qg typ. 30 ID 50 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET m nC i PQFN 5X6 mm A Applications •Synchronous MOSFET for high frequency buck converters

Contextual Info: IRFH8316PbF HEXFET Power MOSFET VDS 30 ± 20 Vgs max RDS on max V V 2.95 (@VGS = 10V) (@VGS = 4.5V) 4.30 Qg typ 30.0 ID 50 (@Tc(Bottom) = 25°C) m nC i PQFN 5X6 mm A Applications •Synchronous MOSFET for high frequency buck converters Features and Benefits

JESD22-B113

Abstract: qfn Substrate design guidelines JESD22B113 JESD22-B111 JESD22B111 AN-1137 AN1136 JEDEC qfn tape JEDEC QFN case outline
Contextual Info: Application Note AN-1136 Discrete Power Quad Flat Pack No-Leads PQFN Board Mounting Application Note Table of Contents Page Device construction . 2 Design considerations . 3 Assembly considerations . 4

IRFH5250

Abstract: IRFH5250TRPBF
Contextual Info: PD -96265B IRFH5250PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tmb = 25°C) 25 V 1.15 mΩ 52 1.3 nC Ω 100 h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET

IRFHM792TRPBF

Abstract: IRFHM792
Contextual Info: PD - 96368A IRFHM792TRPbF IRFHM792TR2PbF VDS Vgs max RDS on max (@VGS = 10V) Qg typ 100 V ± 20 V 195 mΩ 4.2 ID 3.4 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET TOP VIEW D 7 D 8 D 6 D 5 S nC h A G S G D D D 1 S 2 G 3 S 4 G D D D PQFN Dual 3.3X3.3 mm Applications

IRFHS8342

Abstract: irfhs8342pbf IRFHS8342TRPBF
Contextual Info: PD - 97596B IRFHS8342PbF HEXFET Power MOSFET VDS 30 V VGS max ±20 V RDS on max 16.0 mΩ (@VGS = 10V) T OP VIEW D 1 (@VGS = 4.5V) ID (@Tc(Bottom) = 25°C) 4.2 8.5 D D S G 3 G 5 D nC d D D D 2 Qg(typical) D 6 D 4 S D S S 2mm x 2mm PQFN A Applications • Control MOSFET for Buck Converters

rf 4 mm PQFN

Abstract: M513 MASWSS0118 MASWSS0118SMB MASWSS0118TR MASWSS0118TR-3000 PQFN
Contextual Info: GaAs SP4T 2.5 V High Power Switch DC - 3.0 GHz Features GND V4 39 pF Pin 16 GND Low Voltage Operation: 2.5 V Low Harmonics: < -65 dBc at +34 dBm & 1 GHz Low Insertion Loss: 0.65 dB at 1 GHz High Isolation: 23 dB at 2 GHz 4 mm 16-Lead PQFN Package 0.5 micron GaAs PHEMT Process

M513

Abstract: MASWSS0065 MASWSS0065SMB MASWSS0065TR-3000
Contextual Info: GaAs SP3T 2.6 V CDMA-GPS Switch DC - 2.5 GHz Features GND 39 pF Pin 12 ANT Functional Schematic Unbalanced asymmetric RF Paths Low Cross Modulation Low Insertion Loss: 0.5 dB at 1.0 GHz High Isolation: 20 dB at 2.0 GHz 3 mm 12-lead PQFN Package 0.5 micron GaAs PHEMT Process

FDMS2506SDC

Contextual Info: FDMS2506SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.45 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced

FDMS2510SDC

Abstract: 10-L41B-11
Contextual Info: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 2.9 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®

IRLH5036PBF

Contextual Info: IRLH5036PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 4.5V) Qg (typical) RG (typical) ID (@Tmb = 25°C) 60 V 5.5 mΩ 44 1.2 nC Ω h 100 A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications

irlhs6342pbf#2

Contextual Info: IRLHS6342PbF HEXFET Power MOSFET VDS 30 V VGS ±12 V RDS on max 15.5 mΩ (@VGS = 4.5V) Qg (typical) ID 11 (@TC (Bottom) = 25°C) 12 nC i A TOP VIEW 6 D D 1 D 2 G 3 D S D D D 5 D 4 S D D G S S 2mm x 2mm PQFN Applications • Charge and discharge switch for battery application

Contextual Info: IRFH5204PbF HEXFET Power MOSFET VDS 40 V RDS on max 4.3 mΩ Qg (typical) 43 nC RG (typical) 1.7 Ω (@VGS = 10V) ID 100 (@Tc(Bottom) = 25°C) h PQFN 5X6 mm A Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications

Contextual Info: IRFH8325PbF HEXFET Power MOSFET VDS Vgs max RDS on max 30 V ± 20 V 5.0 (@VGS = 10V) (@VGS = 4.5V) 7.2 Qg typ 15 ID (@Tc(Bottom) = 25°C) 25 mΩ nC PQFN 5X6 mm i A Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits

Contextual Info: IRFH5215PbF HEXFET Power MOSFET VDS 150 V RDS on max 58 mΩ Qg (typical) 21 nC RG (typical) 2.3 Ω 27 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Primary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications

IRS2005

Contextual Info: Preliminary Datasheet IRSM005-301MH Half-Bridge IPM for Low Voltage Applications 30A, 100V Description The IRSM005-301MH is a general purpose half-bridge with integrated gate driver in an attractive 7x8mm PQFN package. It is a general purpose building block suitable for a variety of low voltage applications where

IRFH7911

Abstract: IRFH7911TRPBF W5337 AN1152 FET MARKING CODE FET MARKING QG marking JE FET PQFN footprint
Contextual Info: PD - 97427A IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m: 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits Benefits

IRFHM830DTR2PBF

Abstract: IRFHM830DTRPBF AN-1154 J-STD-020D IRFHM830
Contextual Info: PD -96327A IRFHM830DPbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 30 V 4.3 mΩ 13 1.1 nC 40 (@Tc(Bottom) = 25°C) D 5 D Ω h 6 4 G 3 S D 7 2 S D 1 S 8 A 3.3mm x 3.3mm PQFN Applications • Synchronous MOSFET for Buck Converters

IRFH5250TRPBF

Abstract: irfh5250 IRFH5250TR2PBF AN-1154 IRFH5250PBF
Contextual Info: PD -96265 IRFH5250PbF HEXFET Power MOSFET VDS 25 RDS on max 1.15 m 52 1.3 nC (@VGS = 10V) Qg (typical) RG (typical) ID 100 (@Tc(Bottom) = 25°C) V : : h PQFN 5X6 mm A Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET

AN-1154

Abstract: IRFH5250DTR2PBF IRFH5250DTRPBF inductor footprint
Contextual Info: PD - 97453A IRFH5250DPbF HEXFET Power MOSFET VDS 25 V RDS on max 1.4 mΩ 0.6 V 27 ns (@VGS = 10V) VSD max (@IS = 5.0A) trr (typical) ID (@Tc(Bottom) = 25°C) 100 h PQFN 5X6 mm A Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits

IRFH5301

Abstract: AN-1154 IRFH5301TR2PBF IRFH5301TRPBF
Contextual Info: PD -96276 IRFH5301PbF HEXFET Power MOSFET VDS 30 V RDS on max 1.85 mΩ 37 1.5 nC (@VGS = 10V) Qg (typical) RG (typical) ID 100 (@Tc(Bottom) = 25°C) Ω h PQFN 5X6 mm A Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for Buck Converters

IRFH5010TR

Abstract: IRFH5010TRPBF PQFN footprint mosfet 500V 50A IRFH5010 AN-1154 IRFH5010TR2PBF
Contextual Info: PD -96297 IRFH5010PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 100 V 9.0 mΩ 65 1.2 nC 100 (@Tc(Bottom) = 25°C) Ω h PQFN 5X6 mm A Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors

IRFH5020PbF

Abstract: AN-1154 IRFH5020TR2PBF IRFH5020TRPBF IRFH5020 PQFN footprint
Contextual Info: PD -97428 IRFH5020PbF HEXFET Power MOSFET VDS 200 V RDS on max 55 m 36 1.9 nC 43 A (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) : : PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications