PRESTO IIB Search Results

28F256 CMOS FLASH

Contextual Info: SGS-THOMSON M28F256 1ILG 256K 32 x 8 CMOS FLASH MEMORY ADVANCE DATA • FLASH ELECTRICAL CHIP ERASE IN 1 SEC­ OND RANGE. ■ PRESTO F PROGRAMMING TYPICAL BYTE PROGRAM TIME : 100 jus. ■ 12 V VPP SUPPLY. ■ 100 TO 10.000 ERASE/PROGRAM CYCLES. ■ VERY FAST ACCESS TIME : 100 ns.

presto IIB

Contextual Info: £ ÿ j S G S -T H O M S O N VERY LOW VOLTAGE 512K 64K x 8 OTP ROM • VERY LOW VOLTAGE READ OPERATION: 2.7V to 5.5V ■ ACCESS TIME: - 150ns ( T a = 0 to 70 °C) - 200ns (Ta = -20 to 70 °C) ■ LOW POWER ’’CMOS” CONSUMPTION: - Active Current 10mA

Contextual Info: F Z J #« S G S - T H O M S O N M27V512 M g^(Q i[Li(iM (Q )[*§ LOW VOLTAGE CMOS 512K (64K x 8) OTP ROM • LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (Ta = 0 to 70°C) - Vcc Range: 3.2V to 5.5V (T a = -4 0 to 85°C) ■ ACCESS TIME: 200 and 250ns

EPROM M27C512

Contextual Info: rZ T SCS-1H0 MS0 N *7 # M27V512 RfflDM§ iILlim®ROD i LOW VOLTAGE CMOS 512K 64K x 8) OTP ROM • LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (TA = 0 to 70°C) - Vcc Range: 3.2V to 5.5V (T a = - 4 0 to 85°C) ■ ACCESS TIME: 200 and 250ns * LOW POWER "CMOS" CONSUMPTION:

PLCC32

Abstract: va10 datasheet M27C512 M27W512 1N914
Contextual Info: M27W512 VERY LOW VOLTAGE 512K 64K x 8 OTP ROM VERY LOW VOLTAGE READ OPERATION: 2.7V to 5.5V ACCESS TIME: – 150ns (TA = 0 to 70 °C) – 200ns (TA = –20 to 70 °C) LOW POWER ”CMOS” CONSUMPTION: – Active Current 10mA – Standby Current 10µA PROGRAMMING VOLTAGE: 12.75V

PLCC32

Abstract: Thomson capacitors lcc SGS M27C512 1N914 M27C512 M27V512
Contextual Info: M27V512 LOW VOLTAGE 512K 64K x 8 OTP ROM LOW VOLTAGE READ OPERATION: 3V to 5.5V ACCESS TIME: 120, 150 and 200ns LOW POWER ”CMOS” CONSUMPTION: – Active Current 10mA – Standby Current 10µA PROGRAMMING VOLTAGE: 12.75V PROGRAMMING TIMES of AROUND 6sec.

FAH10

Abstract: gvrp jl m27c512 1N914 M27C512 M27V512 PLCC32 VA10
Contextual Info: r Z J S G S -T H O M S O N ^ 7 w . lMD § @liIUI®in3 R0]©l M27V512 LOW VOLTAGE 512K (64K x 8 OTP ROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ ACCESS TIME: 120,150 and 200ns ■ LOW POWER "CMOS” CONSUMPTION: - Active Current 10mA - Standby Current 10|xA

Contextual Info: / = T *7 # « S G S -ÎH O M S O N ,QJ 1Mq * S & M27V512 LOW VOLTAGE CMOS 512K 64K x 8) OTP ROM • LOW VOLTAGE READ OPERATION - V c c Range: 3V to 5.5V (Ta = 0 to 70°C) - V c c Range: 3.2V to 5.5V (T a = -4 0 to 85°C) ■ ACCESS TIME: 120, 150 and 200ns

Contextual Info: M27W801 8 Mbit 1Mb x 8 Low Voltage OTP EPROM LOW VOLTAGE READ OPERATION: 2.7V to 3.6V FAST ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V – 80ns at VCC = 2.7V to 3.6V LOW POWER CONSUMPTION: – Active Current 15mA – Standby Current 20µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V

Contextual Info: M27V801 LOW VOLTAGE 8 Megabit 1Meg x 8 UV EPROM and OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 120ns LOW POWER “CMOS” CONSUMPTION: – Active Current 35mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V 32 1 FDIP32W (F)

M27C512

Abstract: M27C512-20F1 m27c512-25f1 M27C512-12F1 M27C51212X 27C512 SGS-THOMSON
Contextual Info: G ì, SGS-THOMSON M27C512 512K CMOS UV EPROM - OTP ROM • VERY FAST ACCESS TIME : 100 ns. ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE. ■ LOW POWER "CMOS" CONSUMPTION : - Operating current 30mA - Stand by current 200|iA. ■ PROGRAMMING VOLTAGE 12.75V.

M27C801

Abstract: M27V801 M27W801 PLCC32 TSOP32
Contextual Info: M27V801 LOW VOLTAGE 8 Megabit 1Meg x 8 UV EPROM and OTP EPROM NOT FOR NEW DESIGN LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 120ns LOW POWER “CMOS” CONSUMPTION: – Active Current 35mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V

M27C512

Abstract: M27V512 M27W512 PDIP28 PLCC32
Contextual Info: M27V512 LOW VOLTAGE 512K 64K x 8 UV EPROM and OTP EPROM NOT FOR NEW DESIGN LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 90ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED

NS1051

Contextual Info: M27V512 LOW VOLTAGE 512K 64K x 8 UV EPROM and OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 90ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED

Contextual Info: 52E D H = 7 *7fn • 7=^237 S C S -1 H O M S O N L' Iiu r a m « D037Sbb OTT ■ SGTH s fi ^ hohson M 27C512 CMOS 512K 64K x 8 UV EPROM and OTP ROM ■ VERY FAST ACCESS TIME: 80ns ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION:

EPROM M27C512

Abstract: SGS M27C512 thomson eprom M27C512 PDIP28 PLCC32 m27c4001 m27c512 PLCC32 M27C1024 m27c1001 plcc32
Contextual Info: M27C512 512K 64K x 8 UV EPROM and OTP EPROM FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIMES of AROUND 6sec.

SGS M27C512

Abstract: ah rzj M27C512 PDIP28 PLCC32
Contextual Info: £ = 7 S G S -T H O M S O N n m a iin jg iB ïïit a g in iB g M 2 7 C 5 1 2 CMOS 512K 64K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS Tl ME: 60ns ■ COMPATIBLE with HIGH SPEED MICROPRO­ CESSORS, ZERO WAIT STATE - LOW POWER "CMOS" CONSUMPTION: - Active Current 30mA

Contextual Info: SGS-THOMSON D ® [l[L [I© T O Q K i]a © S M 2 7 C 8 0 1 8 Megabit (1 Meg x 8) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 90ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS’ CONSUMPTION: - Active Current 35mA

m27c512 ic pin diagram function

Abstract: ST m27c512
Contextual Info: SGS-THOMSON D M & iM M 0 g§ M27C512 CMOS 512K (64K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 80ns * COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|xA

M27C801

Abstract: PLCC32 TSOP32
Contextual Info: M27C801 8 Megabit 1Meg x 8 UV EPROM and OTP EPROM FAST ACCESS TIME: 90ns LOW POWER “CMOS” CONSUMPTION: – Active Current 35mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIMES of AROUND 52sec.

M27C512

Abstract: PDIP28 PLCC32 m27c512 PLCC32 DSA009463 ST m27c512 AN620 datasheet
Contextual Info: M27C512 512 Kbit 64Kb x8 UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIMES of AROUND 6sec.

Contextual Info: £ = 7 ^ 7 / S G S -T H O M S O N OMD MIlLi©iiM RflD©i M27C512 CMOS 512K 64K x 8) UV EPROM and OTP ROM • VERY FAST ACCESS Tl ME: 60ns ■ COMPATIBLE with HIGH SPEED MICROPRO­ CESSORS, ZERO WAIT STATE - LOW POWER "CMOS" CONSUMPTION: - Active Current 30mA

1N914

Abstract: M27C801 TSOP32
Contextual Info: M27C801 8 Megabit 1Meg x 8 UV EPROM and OTP ROM VERY FAST ACCESS TIME: 90ns COMPATIBLE with HIGH SPEED MICROPROCESSORS, ZERO WAIT STATE LOW POWER “CMOS” CONSUMPTION: – Active Current 35mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED

Contextual Info: SGS-THOMSON 0 ® [ l[ L i© r a ® K ilQ © S M 2 7 C 5 1 2 512K 64K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 60ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS’ CONSUMPTION: - Active Current 30mA