M27C1024 Search Results

M27C1024

Abstract: st m27c1024 PDIP40 PLCC44 Q0-Q15
Contextual Info: M27C1024 1 Mbit 64Kb x16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 35ns ■ LOW POWER CONSUMPTION: – Active Current 35mA at 5MHz 40 40 – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■

M27C1024

Abstract: PLCC44 Q0-Q15
Contextual Info: M27C1024 1 Megabit 64K x16 UV EPROM and OTP ROM FAST ACCESS TIME: 70ns COMPATIBLE with HIGH SPEED MICROPROCESSORS, ZERO WAIT STATE LOW POWER ”CMOS” CONSUMPTION: – Active Current 35mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED

M27C1002

Abstract: PDIP40 PLCC44 Q0-Q15 M27C1024 M27W102
Contextual Info: M27W102 1 Mbit 64Kb x16 Low Voltage UV EPROM and OTP EPROM • 2.7V to 3.6V LOW VOLTAGE in READ OPERATION ■ READ ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V – 80ns at VCC = 2.7V to 3.6V ■ PIN COMPATIBLE with M27C1024 ■ LOW POWER CONSUMPTION: – 15µA max Standby Current

Contextual Info: M27C1024 1 Mbit 64Kb x16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 35ns ■ LOW POWER CONSUMPTION: – Active Current 35mA at 5MHz 40 40 – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■

M27C1024

Abstract: PLCC44 Q0-Q15
Contextual Info: M27C1024 1 Mb 64K x 16 UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Current 35mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME of AROUND 6 sec.

Contextual Info: /= T SGS-IUOMSON M27C1024 CMOS 1Megabit 64K x16 UV EPROM and OTP ROM • FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 35mA - Standby Current 100|xA ■ PROGRAMMING VOLTAGE: 12.75V

M27C1024

Abstract: PLCC44 Q0-Q15
Contextual Info: M27C1024 1 Mbit 64Kb x 16 UV EPROM and OTP EPROM DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Current 35mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME of AROUND 6 sec.

M27C1024

Abstract: PLCC44 Q0-Q15
Contextual Info: M27C1024 1 Megabit 64K x16 UV EPROM and OTP EPROM FAST ACCESS TIME: 55ns LOW POWER ”CMOS” CONSUMPTION: – Active Current 35mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIME of AROUND 6 sec.

Contextual Info: 5 1 . SGS-THOMSON M27C1024 m CMOS 1Megabit 64K x16 UV EPROM and OTP ROM FAST ACC ESS TIM E: 120 ns CO M PATIBLE W ITH HIGH SPEED M IC R O ­ PROCESSORS, ZER O W AIT STATE LOW POWER "CMOS" CONSUMPTION: - Active Current 35 mA - Standby Current 100 (iA PROGRAMMING VOLTAGE: 12.75V

M27C1002

Abstract: M27C1024 M27W102 PDIP40 PLCC44 Q0-Q15
Contextual Info: M27W102 1 Mbit 64Kb x16 Low Voltage UV EPROM and OTP EPROM • 2.7V to 3.6V LOW VOLTAGE in READ OPERATION ■ READ ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V – 80ns at VCC = 2.7V to 3.6V ■ PIN COMPATIBLE with M27C1024 ■ LOW POWER CONSUMPTION: – 15µA max Standby Current

Contextual Info: r Z 7 S G S -1H 0 M S 0 N * 7 Æ, IMH BTOHHH(giMB Mll(Sg M27C1024 CMOS 1Megabit (64K x16) UV EPROM and OTP ROM ABBREVIATED DATA FAST ACCESS TIME: 80ns COMPATIBLE with HIGH SPEED MICROPRO­ CESSORS, ZERO WAIT STATE LOW POWER "CMOS" CONSUMPTION: - Active Current 35mA

M27C1024

Abstract: PDIP40 PLCC44 Q0-Q15 1998E
Contextual Info: M27C1024 1 Mbit 64Kb x16 UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Current 35mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 100µs/byte (typical)

Contextual Info: £ÿj SGS-THOMSON nMXHUimWDÈi M27C1024 1 Mb 64K x 16 UV EPROM and OTP EPROM • 5 V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 35ns ■ LOW POWER CONSUMPTION: - Active Current 35mA - Standby Current 100|j,A ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

M27C1024

Abstract: plcc44 drawing
Contextual Info: 7 7 S G S -T H O M S O N kI t *, MtgOSmitgTTDMQtg M27C1024 1 Megabit 64K x16 UV EPROM and OTP ROM • FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER "CMOS’ CONSUMPTION: - Active Current 35mA - Standby Current 10O^iA

M27C1024

Abstract: PDIP40 PLCC44 Q0-Q15
Contextual Info: M27C1024 1 Mbit 64Kb x16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 35ns ■ LOW POWER CONSUMPTION: – Active Current 35mA at 5MHz 40 40 – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■

presto

Abstract: TSOP40 M27C1024 PDIP40 PLCC44 Q0-Q15
Contextual Info: M27C1024 1 Mbit 64Kb x 16 UV EPROM and OTP EPROM DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Current 35mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME of AROUND 6 sec.

M27C1002

Abstract: LS105 A1275
Contextual Info: M27W102 1 Mbit 64Kb x16 Low Voltage OTP EPROM • LOW VOLTAGE READ OPERATION: 2.7V to 3.6V ■ FAST READ ACCESS TIME: - 70ns at VCc = 3.0V to 3.6V - 80ns at Vcc = 2.7V to 3.6V ■ PIN COMPATIBLE with M27C1024 ■ LOW POWER CONSUMPTION: - 15^iA max Standby Current

h952

Abstract: ATI Research 7bl2 sgs thomson 27C1024 FM27c1024
Contextual Info: HE J> • 7^2^537 0037bl0 T37 S G S -TH O M S O N S 6 ISGTH S-THOMSON 5 7 . T -H-é-ll-ZI M27C1024 CMOS 1Megabit 64K x16 UV EPROM and OTP ROM ■ FAST ACCESS TIME: 120 ns ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE ■ LOW POWER "CMOS" CONSUMPTION:

M27C1024

Abstract: PDIP40 PLCC44 Q0-Q15
Contextual Info: M27C1024 1 Mbit 64Kb x16 UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Current 35mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 100µs/byte (typical)

M27C1024

Abstract: PDIP40 PLCC44 Q0-Q15 st m27c1024
Contextual Info: M27C1024 1 Mbit 64Kb x16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 35ns ■ LOW POWER CONSUMPTION: – Active Current 35mA at 5MHz 40 40 – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■

Contextual Info: K 0 A KAOHSIUNG 3bE D m SD4b0fl2 OODDDlt □ • K O A ' f - H u - o \ t - u\.<\ - n - DV u / SEMICONDUCTOR DEVICES * MPU • ROM M bit 16K 32K EPROM M2716 • M 2732 M2764A TS27C64A M27128A M 27256 M27C256B M27512 M27C512 M27C1000 M27C1001 M27C1024 2KX8

Contextual Info: £ jJ SG S-TH O M SO N D g^ HlLi TO©M®i M27C1024 1 Megabit (64K x16 UV EPROM and OTP ROM • FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER "CMOS’ CONSUMPTION: - Active Current 35mA - Standby Current 100mA

256k x8 SRAM 5V

Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)

m27c1024

Contextual Info: M27C1024 1 Megabit 64K x16 UV EPROM and OTP EPROM DATA BRIEFING FAST ACCESS TIME: 55ns LOW POWER ”CMOS” CONSUMPTION: – Active Current 35mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIME of AROUND 6 sec.