prom 32x8
Abstract: GDFP2-F16 82s123 philips GDIP1-T16 82s123 82S123/BEA TRANSISTORS 123A 82S23 S23B GDIP1T-16
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 82S23/S23A/S23B 82S123/123A/123B 256-bit TTL bipolar PROM 32x8 APPLICATIONS DESCRIPTION • Prototyping/volume production • Sequential controllers • Format conversion • Hardwired algorithms
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82S23/S23A/S23B
82S123/123A/123B
256-bit
82S23
82S123
500ns
prom 32x8
GDFP2-F16
82s123 philips
GDIP1-T16
82S123/BEA
TRANSISTORS 123A
S23B
GDIP1T-16
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82s141
Abstract: 82S141/BKA mux 8 to 1 timing 8 bit ttl mux 8 INPUT 4 OUTPUT MUX GDFP2-F24
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512x8 82S141 • Microprogramming • Hardwired algorithms • Control store • Random logic • Code conversion FEATURES • Address access time: 90ns max
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512x8)
82S141
82S141
500ns
82S141/BKA
mux 8 to 1 timing
8 bit ttl mux
8 INPUT 4 OUTPUT MUX
GDFP2-F24
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82S137
Abstract: 4 to 16 decoder for ttl circuit GDIP1-T18 bipolar PROM 1024X4 a2712 1024x4 prom
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 1024x4 82S137 FEATURES DESCRIPTION • Address access time: 70ns max • Input loading: -150µA max • On-chip address decoding • No separate fusing pins
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1024x4)
82S137
82S137
500ns
4 to 16 decoder for ttl circuit
GDIP1-T18
bipolar PROM
1024X4
a2712
1024x4 prom
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82S147B
Abstract: F0180 mux 8 to 1 timing
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512x8 82S147B FEATURES DESCRIPTION • Address access time: 45ns max • Input loading: -150µA max • One chip enable input • On-chip address decoding
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512x8)
82S147B
82S147B
500ns
F0180
mux 8 to 1 timing
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prom 256x4 bit
Abstract: GDIP1-T16 82S129A/BEA 82S126A 82S129A GDFP2-F16 bipolar PROM 32 x 32 matrix
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 82S126A 82S129A 1K-bit TTL bipolar PROM 256x4 FEATURES DESCRIPTION • Address access time: 35ns max • Input loading: -150µA max • On-chip address decoding • Output options:
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82S126A
82S129A
256x4)
82S126A
82S129A
82S126A:
82S129A:
500ns
prom 256x4 bit
GDIP1-T16
82S129A/BEA
GDFP2-F16
bipolar PROM
32 x 32 matrix
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82S137
Abstract: 82S137A GDIP1-T18 4k prom 4 to 16 decoder for ttl circuit 1024X4
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 1024x4 82S137A FEATURES DESCRIPTION • Address access time: 55ns max • Input loading: -150µA max • On-chip address decoding • No separate fusing pins
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1024x4)
82S137A
82S137A
500ns
82S137
GDIP1-T18
4k prom
4 to 16 decoder for ttl circuit
1024X4
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raytheon
Abstract: AM27S291ADC MB7138H-SK 27C291-50 SIGNETICS prom 63S1681N 57C29-1 57C291-55 63S1681ANS HARRIS PROM
Text: SEEQ TECHNOLOGY PROM REPLACEMENT CHART Alternate Manufacturer Part # Description SEEQ Part # AMD AM27PS291DC 2K X 8 PROM AMD AM27PS291DM 2K X 8 PROM 36C16-55 AMD AM27PS291ADM 2K X 8 PROM 36C16-55 36C16-35 36C16-45 AMD AM27S291ADC 2K X 8 PROM CYPRESS CY7C291-35
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AM27PS291DC
AM27PS291DM
AM27PS291ADM
AM27S291ADC
CY7C291-35
CY7C291-50
MB7138Y-SKZ
MB7138H-SKZ
MB7138E-WZ
63S1681NS
raytheon
MB7138H-SK
27C291-50
SIGNETICS prom
63S1681N
57C29-1
57C291-55
63S1681ANS
HARRIS PROM
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N82S123F
Abstract: N82S123N N82S23F 82S123 programming N82S23N 82S123 SIGNETICS prom signetics 82S123 n82s123 82S23
Text: Signetics Mem ories - Bipolar Prom s Programming Signetics P R O M S CONNECTION DIAGRAM PROM programming is available through ITT Gemini for further details please contact your local sales office. N82S23/N82S123 PROM 256 Bit Bipolar GENERAL DESCRIPTION The 82S23 and 82S123 are field programmable, which
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N82S23/N82S123
82S23
82S123
N82S123F
N82S123N
N82S23F
82S123 programming
N82S23N
SIGNETICS prom
signetics 82S123
n82s123
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82S123 programming
Abstract: PJ 3139 prom 82S126 NCE8205 82s131 programming Signetics 2513 SIGNETICS prom ttl 512 CM340 82s129 programming Signetics 2608
Text: Ejgnotics ROM/PROM CONTENTS T TL PROM CONTENTS PAGE 2 T TL FPLA C O N T E N T S . PAGE 2 ECL PROM CONTENTS PAGE 3 SIGNETICS PROM R E L IA B IL IT Y PAGE 35 T TL ROM C O N T E N T S . PAGE 3 T T L ROM O R D ER IN G INFO
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N82S23
N82S123
N82S126
N82S1-29
N82S27
N82S130
N82S131
N82S114
N82S115
82S123 programming
PJ 3139
prom 82S126
NCE8205
82s131 programming
Signetics 2513
SIGNETICS prom ttl 512
CM340
82s129 programming
Signetics 2608
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SIGNETICS prom
Abstract: 82s129 programming 82S100 pin diagram of LED dot matrix display 9x9 Signetics TTL MIMI Ti PROM programming procedure Signetics 2513 82s131 programming 2048 bit 256x8 bipolar prom N82S130
Text: Ejgnotics ROM/PROM CONTENTS T TL PROM CONTENTS PAGE 2 T TL FPLA C O N T E N T S . PAGE 2 ECL PROM CONTENTS PAGE 3 SIGNETICS PROM R E L IA B IL IT Y PAGE 35 T TL ROM C O N T E N T S . PAGE 3 T T L ROM O R D ER IN G INFO
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N82S23
N82S123
N82S126
N82S1-29
N82S27
N82S130
N82S131
N82S114
SIGNETICS prom
82s129 programming
82S100
pin diagram of LED dot matrix display 9x9
Signetics TTL
MIMI Ti PROM programming procedure
Signetics 2513
82s131 programming
2048 bit 256x8 bipolar prom
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2048 bit 256x8 bipolar prom
Abstract: 82S115 512x8 PROM 82S114 512X8 signetics PROM
Text: s ig n o tic s 2048-BIT BIPOLAR ROM 256x8 PROM 4096-BIT BIPOLAR ROM (512x8 PROM) 825114 825115 DIGITAL 8000 SERIES TTL/MEMORY DESCRIPTION PIN CONFIGURATION The 82S114 and 82S115 are Schottky-clamped Read Only Memories, incorporating on-chip data output registers.
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2048-BIT
256x8
4096-BIT
512x8
82S114
82S115
2048 bit 256x8 bipolar prom
512x8 PROM
signetics PROM
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N82S147N
Abstract: SIGNETICS prom N82S147 512 PROM 82s
Text: S ign etics Memories - Bipolar Prom 512 x 8 C O N N E C T IO N D IA G R A M N82S146, N82S147 - 4096 Bit Bipolar Prom (512 x 8) G E N E R A L D E S C R IP TIO N T he 82S 146 and 82S147 are fie ld program m able. The standard devices are supplied w ith all o u tp u ts at logical
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N82S146,
N82S147
82s146
82s147
n82s146/147.
N82S147N
SIGNETICS prom
512 PROM 82s
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82S321
Abstract: N82S321 32-Kbit 750FL Signetics Generic I fusing procedure
Text: 82S321 Signetics 32K-Bit TTL Bipolar PROM Product Specification Bipolar Memory Products DESCRIPTION FEATURES The 82S321 is field programmable, which means that custom patterns are immediately available by following the Signetics Generic I fusing procedure.
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82S321
32K-Bit
82S321
750fl,
750i2
N82S321
32-Kbit
750FL
Signetics Generic I fusing procedure
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SIGNETICS prom
Abstract: No abstract text available
Text: 82S147B Signetics 4K-Bit TTL Bipolar PROM Military Bipolar Memory Products Product Specification DESCRIPTION FEATURES The 82S147B is field-programmable, which means that custom patterns are immediately available by following the Signetics Generic Ifusing procedure. The
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82S147B
82S147B
512x8)
SIGNETICS prom
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Signetics 82S191
Abstract: 82S191 82S191A signetics generic procedure
Text: Signetics 82S191, 82S191A Military Bipolar Memory Products Product Specification 16K-Bit TTL Bipolar PROM DESCRIPTION The 82S191 and 82S191A are field programmable, which means that custom patterns are immediately available by following the Signetics Generic I fusing
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82S191,
82S191A
82S19
100ns
82S191A:
16K-Bit
82S191
82S191A
Signetics 82S191
signetics generic procedure
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82S141/8708+prom
Abstract: No abstract text available
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512 x 8 82S141 FEATURES • Microprogramming • Address access time: 90ns max • Hardwired algorithms • Input loading: -150jiA max • Control store
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82S141
-150jiA
82S141
1002b
711002b
82S141/8708+prom
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CQCC2-N28
Abstract: 82S181A 1024 x 4 prom GDIP1-T24
Text: Product specification Philips Semiconductors Military Bipolar Memory Products 82S181A 8K-bit TTL bipolar PROM 1024 x 8 DESCRIPTION FEATURES The 82S181A is field-programmable, which means that custom patterns are immediately available by following the Philips Generic I
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82S181A
82S181A
500ns
711Qfi2b
CQCC2-N28
1024 x 4 prom
GDIP1-T24
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82S181A
Abstract: No abstract text available
Text: Philips Components-Signetics Document No. 853-0130 ECN No. 86487 Date of Issue November 11, 1986 Status Product Specification 82S181 / 82S181A 8K-bit TTL bipolar PROM Memory Products DESCRIPTION The 82S181 and 82S181Aarefield programmable, which means that
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82S181
82S181A
82S181Aarefield
82S181
82S181A
organization25V
N82S181
N82S181A
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CE0102
Abstract: 82S181 CQCC2-N28
Text: Product specification Philips Semiconductors Military Bipolar Memory Products 8K-bit TTL bipolar PROM 1024 x 8 82S181 DESCRIPTION FEATURES The 82S181 is field-programmable, which means that custom patterns are immediately available by following the Philips Generic I
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82S181
82S181
500ns
0Gfl5074
711002b
CE0102
CQCC2-N28
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GDIP1-T16
Abstract: GDFP2-F16 82S23 S23B 82s123 philips 82S123/BEA 82S123 82s123b PROM32 82S23A/BFA
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 82S23/S23A/S23B 82S123/123A/123B 256-bit TTL bipolar PROM 32 x 8 APPLICATIONS DESCRIPTION • Prototyping/volume production The 82S23 and 82S123 are field-programmable, which means that
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256-bit
82S23/S23A/S23B
82S123/123A/123B
82S23:
82S123
82S23
500ns
Auqust24.
GDIP1-T16
GDFP2-F16
S23B
82s123 philips
82S123/BEA
82s123b
PROM32
82S23A/BFA
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82s291a
Abstract: No abstract text available
Text: Signetics 82S291A 16K-Bit TTL Bipolar PROM Military Bipolar Memory Products Product Specification APPLICATIONS DESCRIPTION FEATURES The 82S291A is field programmable, which means that custom patterns are immediately available by following the Signetics Generic II fusing procedure. The
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82S291A
16K-Bit
82S291A
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O2-A2
Abstract: f0035 82S137A GDIP1-T18
Text: Product specification Philips Semiconductors Military Bipolar Memory Products 4K-bit TTL bipolar PROM 1024 x 4 82S137A DESCRIPTION FEATURES The 82S137A is field-programmable, which means that custom patterns are immediately available by following the Philips Generic I
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82S137A
-150jiA
82S137A
600ft
500ns
7110fl5b
00flSÃ
O2-A2
f0035
GDIP1-T18
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SIGNETICS 82S141
Abstract: SIGNETICS prom ttl 512 IC TTL 4700 82S141/BJA 82S141
Text: Signetics 82S141 4K-Bit TTL Bipolar PROM Military Bipolar Memory Products Product Specification DESCRIPTION FEATURES APPLICATIONS The 82S141 is field programmable, which means that custom patterns are immediately available by following the Signetics Generic I fusing procedure. The
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82S141
82S141
1000ft
SIGNETICS 82S141
SIGNETICS prom ttl 512
IC TTL 4700
82S141/BJA
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N82S126
Abstract: 82S126 32 x 32 matrix prom 256x4 bit 82S129
Text: BIPOLAR MEMORY MAY 1982 1024-BIT BIPOLAR PROM 256x4 82S126 (O.C.)/82S129 (T.S.) DESCRIPTION FEATURES The 82S126 and 82S129 are field p ro g ra m mable, w hich means th a t cu sto m patterns
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1024-BIT
256x4)
82S126
/82S129
82S126
82S129
N82S126
32 x 32 matrix
prom 256x4 bit
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