PSPICE ESD Search Results

SIOV-S20K275

Abstract: IC Datenbuch spice modelle GER-A siemens datenbuch varistor 400V pspice
Contextual Info: Manfred Holzer ● Willi Zapsky Varistormodell für PSpice: Simulieren geht über Probieren Ls Cp V=f I Bild 1 Grundstruktur des Varistormodells für die Simulation mit PSpice te Eingabe eines Stromlaufplans aufbereiten. Eines dieser Programme ist »PSpice

resistor parasitic capacitance

Abstract: vcc2895 motorola ECL RB433 "motorola ecl" .h116 H1052 T06B1 motorola LOGIC H188
Contextual Info: AN1578 Application Note MECL 10H SPICE Kit for Berkeley SPICE PSPICE Prepared by Andrea Diermeier Cleon Petty Motorola Logic Applications Engineering MECL 10H is a trademark of Motorola, Inc. 9/96  Motorola, Inc. 1996 1 REV 0 AN1578 MECL 10H SPICE Kit for Berkeley SPICE (PSPICE)

RFD8P06LESM9A

Abstract: m041 mosfet motor dc 48v Logic Level p-Channel Power MOSFET RFD8P06LE RFD8P06LESM RFP8P06LE 08E4 30e2
Contextual Info: RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet July 1999 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET • 8A, 60V Formerly developmental type TA49203. • rDS ON = 0.300Ω • 2kV ESD Protected • Temperature Compensating PSPICE Model

40V 60A MOSFET

Abstract: RFG60P05E TB334
Contextual Info: RFG60P05E Data Sheet July 1999 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET RFG60P05E TO-247 • 60A, 50V • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve

RFG60P05E

Abstract: TB334
Contextual Info: RFG60P05E Data Sheet July 1999 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET • 60A, 50V RFG60P05E PACKAGE TO-247 • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve

Contextual Info: RFT1P06E HARRIS S E M I C O N D U C T O R 1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET March 1998 Description Features 1.4A, 60V rDS ON = 0-285i2 2kV ESD Protected Temperature Compensating PSPICE Model SPICE Thermal Model These products are

Contextual Info: RFG60P05E & HAS«» 60A, 50V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET D e c e m b e r 1995 Package Features JEDEC STYLE TO-247 • 60 A ,50V SOURCE • rDS ON = 0.03012 • Temperature Compensating PSPICE Model • 2kV ESD Rated

3055L

Abstract: TD 8145 AN7254 AN7260 AN9321 AN9322 RFT3055LE TB334
Contextual Info: RFT3055LE Data Sheet August 1999 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET • 2.0A, 60V • rDS ON = 0.150Ω • 2kV ESD Protected • Temperature Compensating PSPICE Model • Thermal Impedance SPICE Model • Peak Current vs Pulse Width Curve

50V 60A MOSFET

Abstract: RFG60P05E 124E-12
Contextual Info: RFG60P05E S E M I C O N D U C T O R 60A, 50V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET December 1995 Features Package • 60A, 50V JEDEC STYLE TO-247 • rDS ON = 0.030Ω SOURCE DRAIN GATE • Temperature Compensating PSPICE Model

Contextual Info: HUF76131SK8 Data Sheet September 1999 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 10A, 30V • Ultra Low On-Resistance, rDS ON = 0.013Ω • Temperature Compensating PSPICE Model • Thermal Impedance SPICE Model

Contextual Info: HUFA75631SK8 TM Data Sheet November 2000 File Number 4959 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH 5 • Simulation Models - Temperature Compensated PSPICE® and SABER Electrical Models - Spice and SABER Thermal Impedance Models

ta7610

Abstract: TA761 AN7254 AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
Contextual Info: HUF76105SK8 Data Sheet May 1999 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 5.5A, 30V • Ultra Low On-Resistance, rDS ON = 0.050Ω • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models

Contextual Info: RFD14N06, RFD14N06SM, RFP14N06 HARRIS r^ o V o V ^ 14A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs MegaFETs Ju n e 1995 Packaging Features JEDEC T0-220AB • 14A, 60V • rDS(ON) SOURCE = 0.100i2 • Temperature Compensating PSPICE Model

Contextual Info: J W S S em icon du cto r RFG45N06LE, RFP45N06LE, RF1S45N06LESM I Data Sheet April 1999 45A, 60V, 0.028 Ohm, ESD Rated, Logic Level N-Channel Power MOSFETs • 45A, 60V Formerly developmental type TA49177. • rDS ON = 0.028i2 • 2kV ESD Protected • Temperature Compensating PSPICE Model

RFD8P06E

Abstract: RFD8P06ESM RFD8P06ESM9A RFP8P06E IS415 BV202 D8P06
Contextual Info: RFD8P06E, RFD8P06ESM, RFP8P06E S E M I C O N D U C T O R 8A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 8A, 60V SOURCE • rDS ON = 0.300Ω DRAIN GATE • Temperature Compensating PSPICE Model

RFG60P06E

Contextual Info: RFG60P06E S E M I C O N D U C T O R 60A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET January 1996 Features Package • 60A, 60V JEDEC STYLE TO-247 SOURCE DRAIN GATE • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model

76139s

Abstract: 76139p HUF76139P3 76139
Contextual Info: ASSESS? HUF76139P3, HUF76139S3, HUF76139S3S 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs May 1998 | Features • Logic Level Gate Drive • 75A,30V • Ultra Low On-Resistance, ros ON = 0.0075£2 • Temperature Compensating PSPICE Model

FD3055

Abstract: Fp3055 IS433 4078 relay RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs • 12A, 60V Formerly developmental type TA49082. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve

75652G

Abstract: AN7254 AN7260 AN9321 AN9322 HUF75652 HUF75652G3 TB334
Contextual Info: HUF75652G3 Data Sheet October 1999 File Number 4746.1 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.008Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

65e9

Abstract: irfp150n IRFP150N equivalent AN7254 AN7260 AN9321 AN9322 TB334
Contextual Info: IRFP150N TM Data Sheet March 2000 File Number 4844 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

D15P05

Abstract: RFP15P05 RFD15P05 RFD15P05SM RFD15P05SM9A TB334
Contextual Info: RFD15P05, RFD15P05SM, RFP15P05 Data Sheet July 1999 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs • 15A, 50V Formerly developmental type TA09833. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve

AN9321

Abstract: AN9322 RFD3N08L RFD3N08LSM RFD3N08LSM9A TB334 Intersil application notes
Contextual Info: RFD3N08L, RFD3N08LSM Data Sheet 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs 2836.4 • 3A, 80V • rDS ON = 0.800Ω • Temperature Compensating PSPICE Model • On Resistance vs Gate Drive Voltage Curves • Peak Current vs Pulse Width Curve

AN7254

Abstract: AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334
Contextual Info: HUF76132SK8 Data Sheet September 1999 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 11.5A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - Spice and SABER Thermal Impedance Models

Contextual Info: IRF530 TM Data Sheet February 2001 File Number 4843.1 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-220AB • Ultra Low On-Resistance - rDS ON = 0.064Ω, VGS = 10V SOURCE DRAIN GATE • Simulation Models - Temperature Compensated PSPICE and SABER