PSPICE MODEL FOR TTL Search Results

Contextual Info: RFD14N06L, RFD14N06LSM, RFP14N06L Semiconductor April 1999 Data Sheet 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs • 14A, 60V • r DS ON = 0 .1 0 0 i2 • Temperature Compensating PSPICE Model • Can be Driven Directly from CMOS, NMOS, and TTL

pspice model for ttl

Abstract: 7n10l FP7N10LE 268E-5 TC1-1-13 358e9 pspice model for CMOS TRS-10
Contextual Info: m HARRIS RFD7N10LE, RFD7N10LESM RFP7N10LE U U S E M I C O N D U C T O R February 1994 7 A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Packaging Features JEDEC TO-220AB TOP VIEW • 7A, 100V • r DS(ON) = 0 .3 0 0 Q

Contextual Info: • 430Z271 0054745 0T2 fKj HARRIS V D SEMICONDUCTOR February1994 ■ HAS RFD7N10LE, RFD7N10LESM RFP7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging • 7A, 100V JEDEC TO-220AB

Contextual Info: RFD7N10LE, RFD7N10LESM S em iconductor April 1999 Data Sheet 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

BUF600X1

Abstract: ISO130X ISO120X ACF2101M VoltageControlled Voltage Source INA106 equivalent INA114E BUF634X INA101E TRANSISTOR BC 141
Contextual Info: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132

BUF600X1

Abstract: ISO120X BUF634X MPC104X1 ISO130X ACF2101M MPC100X1 opa129 pspice model OPT101 equivalent OPA2541
Contextual Info: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132

Contextual Info: RFD16N06LE, RFD16N06LESM Semiconductor April 1999 Data Sheet 16A, 60V, 0.047 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

p30N06LE

Abstract: P30N06 RFP30N06LE MOSFET P30N06L 107E3 p30n0
Contextual Info: m HARRIS RFP30N06LE S E M I C O N D U C T O R 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFET MegaFET January 1994 Package Features TO-220AB • 30A.60V TOP VIEW • r DS(ON) - 0.047£2 • 2KV ESD Protected DRAIN

Contextual Info: RFD16N03L, RFD16N03LSM Semiconductor April 1999 Data Sheet 16A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum

f45n03l

Abstract: FP45N03L
Contextual Info: ? *3 2 S RFP45N03L, RF1S45N03L, RF1S45N03LSM 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 45A,30V • Peak Current vs Pulse Width Curve These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

7n10l

Abstract: 7n10le pspice model for ttl AN7254 AN7260 RFD7N10LE RFD7N10LESM RFD7N10LESM9A TB334
Contextual Info: RFD7N10LE, RFD7N10LESM Data Sheet 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum

f42n03l

Contextual Info: ? *3 2 S RFP42N03L, RF1S42N03L, RF1S42N03LSM 42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 42A,30V • Peak Current vs Pulse Width Curve These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

tt 2246

Abstract: Transistor TT 2246 14n05l equivalent tt 2246 14n05 TT 2246 datasheet 14A, 50V, Logic Level, N-Channel TO-252 RFP14N05L AN9321 RFD14N05L
Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet April 1999 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs • 14A, 50V Formerly developmental type TA09870. Ordering Information PACKAGE 2246.3 Features These are N-channel power MOSFETs manufactured using

16n06l

Abstract: 16n06 AN7254 AN7260 RFD16N06LE RFD16N06LESM RFD16N06LESM9A TB334 16N06LE TA49027
Contextual Info: RFD16N06LE, RFD16N06LESM Data Sheet 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum

Contextual Info: P *3 3 S RFD7N10LE, RFD7N10LESM, RFP7N10LE 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs January 1998 Features Description • 7A, 100 V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

mosfet motor dc 48v

Abstract: 14n06l 14N06 FP14N RELAY 4088 RFD14N06L RFD14N06LSM RFD14N06LSM9A RFP14N06L TB334
Contextual Info: RFD14N06L, RFD14N06LSM, RFP14N06L Data Sheet July 1999 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs • 14A, 60V Formerly developmental type TA09870. Ordering Information PACKAGE 4088.3 Features These are N-Channel power MOSFETs manufactured using

16N03

Abstract: TA49030 16N03L AN7254 AN9321 AN9322 RFD16N03L RFD16N03LSM RFD16N03LSM9A TB334
Contextual Info: RFD16N03L, RFD16N03LSM Data Sheet 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.

7N10LE

Abstract: FP7N10LE RFD7N10LESM9A TO-220 package thermal resistance pspice model for ttl RFD7N10LE RFD7N10LESM RFP7N10LE TB334 TC1-1-13
Contextual Info: RFD7N10LE, RFD7N10LESM, RFP7N10LE S E M I C O N D U C T O R 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs January 1998 Features Description • 7A, 100V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

16n06l

Abstract: pspice model for ttl
Contextual Info: m W HARRIS S E M I C O N D U C T O R March1994 RFD16N06LE RFD16N06LESM 16A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Packaging Features JEDEC TO-251 AA TOP VIEW • 16A, 60V • rDS(ON) = 0 .0 4 7 Q • 2KV ESD Protected

7n10le

Abstract: AN7254 AN7260 RFD7N10LE RFD7N10LESM RFP7N10LE pspice model for ttl TC247
Contextual Info: S E M I C O N D U C T O R February 1994 RFD7N10LE, RFD7N10LESM RFP7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging • 7A, 100V JEDEC TO-220AB TOP VIEW • rDS(ON) = 0.300Ω • 2KV ESD Protected

FP45N03L

Abstract: F45N03L fp45n03 RFP45N03L RF1S45N03LSM TA49030 F45N03 relay 24v 30a AN7254 AN7260
Contextual Info: RFP45N03L, RF1S45N03L, RF1S45N03LSM S E M I C O N D U C T O R 45A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 45A, 30V SOURCE DRAIN GATE • rDS ON = 0.022Ω • Temperature Compensating PSPICE Model

FP45N03L

Abstract: fp45n03 f45n03l fp45n RFP45N03L N03l TA49030 F45N03 N03LS bvdss
Contextual Info: [ /Title RFP45 N03L, RF1S45 N03L, RF1S45 N03LS M /Subject (45A, 30V, 0.022 Ohm, RFP45N03L, RF1S45N03L, RF1S45N03LSM Semiconductor 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 45A, 30V • Peak Current vs Pulse Width Curve

16n03l

Abstract: 16N03 RFD16N03LSM RFD16N03LSM9A TA49030 AN7254 AN7260 AN9321 AN9322 RFD16N03L
Contextual Info: RFD16N03L, RFD16N03LSM S E M I C O N D U C T O R 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs December 1995 Features Packaging • 16A, 30V JEDEC TO-251AA SOURCE DRAIN GATE • rDS ON = 0.022Ω • Temperature Compensating PSPICE Model

14n05l

Abstract: 14N05 Transistor TT 2246 TT 2246 RFD14N05LSM RFP14N05L RFD14N05L rs 355 integrated circuits FP14N05L AN7254
Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L S E M I C O N D U C T O R 14A, 50V, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging • 14A, 50V JEDEC TO-220AB SOURCE DRAIN GATE • rDS ON = 0.100Ω • Temperature Compensating PSPICE Model