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PT086N4 Abstract: PT086N Contextual Info: Photo Transistor PT086N4 2.ELECTRICAL & OPTICAL CHARACTERISTICS Ta=25℃ Dimensions (Unit:mm) 2.0mW/cm 12 10 COLLECTOR CURRENT (mA) ･High Reliability ･Optical Switches ･Optical Sensors ･Edge Sensing ･Smoke Detectors COLLECTOR CURRENT (mA) FEATURES	Original	PT086N4 PT086N PT086N4 PT086N	PDF

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PT086N4

Abstract: PT086N
Contextual Info: Photo Transistor PT086N4 2.ELECTRICAL & OPTICAL CHARACTERISTICS Ta=25℃ Dimensions (Unit:mm) 2.0mW/cm 12 10 COLLECTOR CURRENT (mA) ･High Reliability ･Optical Switches ･Optical Sensors ･Edge Sensing ･Smoke Detectors COLLECTOR CURRENT (mA) FEATURES

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