PT80 Search Results

PT8000

Abstract: PT8001 PT8002
Contextual Info: PT8000—5V 60 Amp High-Performance Programmable ISR SLTS135A Revised 4/5/2001 Features • • • • 60A Output Current Multi-Phase Topology +5V Input 5-bit Programmable: 1.3V to 3.5V 1.075V to 1.850V • High Efficiency • Differential Remote Sense

PT800A

Abstract: PT800B PT800D PT800G
Contextual Info: PT800A . PT800M PT800A . PT800M Silicon Rectifiers – Single Diode Silizium-Gleichrichter – Einzeldiode Version 2006-04-28 Nominal current Nennstrom 4 Type Typ 1 2 3 13.2 3 3.8 4 1.5 8A Repetitive peak reverse voltage Periodische Spitzensperrspannung

max 9240

Abstract: max9240
Contextual Info: • R A dvan c ed W*Æ POWER Techno lo g y A PT8028J V R soov 2sa o.2soq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

PT800M

Contextual Info: PT800A . PT800M PT800A . PT800M Silicon Rectifiers – Single Diode Silizium-Gleichrichter – Einzeldiode Version 2010-03-31 Type Typ 2.67±0.2 0.42±0.4 3 13.9±0.3 1 2.8±0.3 8A Repetitive peak reverse voltage Periodische Spitzensperrspannung 4 1 ±0.1

Contextual Info: PT800A . PT800M PT800A . PT800M Silicon Rectifier Diodes – Single Diode Silizium-Gleichrichterdioden – Einzeldiode Version 2012-10-09 0.42±0.4 13.9±0.3 2.67±0.2 2.8±0.3 Ø 3.8±0.2 4 Type Typ 1 Nominal current Nennstrom 3 8A Repetitive peak reverse voltage

PT800A

Abstract: PT800B PT800D PT800G
Contextual Info: PT800A . PT800M PT800A . PT800M Silicon Rectifier Diodes – Single Diode Silizium-Gleichrichterdioden – Einzeldiode Version 2010-03-31 Type Typ 2.67±0.2 0.42±0.4 3 13.9±0.3 1 2.8±0.3 8A Repetitive peak reverse voltage Periodische Spitzensperrspannung

Contextual Info: PT8000—5V 60 Amp High-Performance Programmable ISR SLTS135A Revised 4/5/2001 Features • • • • 60A Output Current Multi-Phase Topology +5V Input 5-bit Programmable: 1.3V to 3.5V 1.075V to 1.850V • High Efficiency • Differential Remote Sense

APT901RBN

Abstract: apt4530bn APT801R2BN APT4030BN APT902R4BN APT*1002R4BN APT1003R5BN APT3520BN APT1001RBN APT1002RBN
Contextual Info: ADVANCED POWER TECHNOLOGY C APT PART N U M BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN PT8075BN A PT8090BN PT801R2BN A PT801R4BN PT802RBN A PT802R4BN APT7575BN

CMPT8099

Abstract: CMPT8599
Contextual Info: Central PT8099 NPN CMPT8599 PNP S e m ic o n d u c to r COMPLEMENTARY SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEM IC O N D U C TO R C M PT8099, C M PT8599 types are C om p le m e nta ry S ilicon T ra n sisto rs manufactured by the epitaxial planar process,

Contextual Info: PT8000—5V 60 Amp High-Performance Programmable ISR SLTS135A Revised 4/5/2001 Features • • • • 60A Output Current Multi-Phase Topology +5V Input 5-bit Programmable: 1.3V to 3.5V 1.075V to 1.850V • High Efficiency • Differential Remote Sense

NILE

Abstract: PT80C525 PT80C524
Contextual Info: February 1997 PT80C525 PicoPower NILE-II Advanced PCI-to-PCI Bridge Interface Controller General Description NILE-II PT80C525 is a high-performance Microsoft Windows ® 95-compatible PCI-to-PCI bridge interface controller for portable and desktop systems. It is compliant with the

Contextual Info: PT8000—5V 60 Amp High-Performance Programmable ISR SLTS135A Revised 4/5/2001 Features 60A Output Current Multi-Phase Topology +5V Input 5-bit Programmable: 1.3V to 3.5V 1.075V to 1.850V • High Efficiency • Differential Remote Sense • Short Circuit Protection

h48 dio

Abstract: DIO- h48
Contextual Info: • R A dvanced W*Æ POWER Tec h n o lo g y A PT8030J V R soov 2sa 0.300Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

PT800B

Abstract: PT800D PT800G PT800A
Contextual Info: PT800A . PT800M PT800A . PT800M Silicon Rectifiers – Single Diode Silizium-Gleichrichter – Einzeldiode Version 2007-07-06 Nominal current Nennstrom 10 4 Type Typ 1 2 3 13.2 3 3.8 1.5 8A Repetitive peak reverse voltage Periodische Spitzensperrspannung

15A10

Abstract: SK1045 SK1840 SK1020D1 SK1030D1 SK1040D1 SK1045D1 Diodes Rectifiers SBCT2045 SK3050
Contextual Info: 2.3 5.08 0.4 20 A 20 A ±0.1 0.42±0.4 ±0.2 0.8 20 A 10.1±0.3 2x8A ±0.1 0.6±0.1 0.8 ±0.2 1.3 0.7 ±0.2 5.08±0.1 2x8A S16ASD2 PT800A PST1600A PCT1600A S16BSD2 PT800B PST1600B PCT1600B 200 S16DSD2 PT800D PST1600D PCT1600D 400 S16GSD2 PT800G PST1600G PCT1600G

Contextual Info: PT8000—5V 60 Amp High-Performance Programmable ISR SLTS135A Revised 4/5/2001 Features • • • • 60A Output Current Multi-Phase Topology +5V Input 5-bit Programmable: 1.3V to 3.5V 1.075V to 1.850V • High Efficiency • Differential Remote Sense

PT800A

Contextual Info: PT800A . PT800M PT800A . PT800M Silicon Rectifier Diodes – Single Diode Silizium-Gleichrichterdioden – Einzeldiode Version 2013-05-07 0.42±0.1 ±0.3 ±0.2 13.9 2.67 2.8±0.3 4 Type Typ 3 8A Repetitive peak reverse voltage Periodische Spitzensperrspannung

PT8000

Abstract: PT8001 PT8002
Contextual Info: PT8000—5V 60 Amp High-Performance Programmable ISR SLTS135 Preliminary 2/27/2001 Features • • • • 60A Output Current Multi-Phase Topology +5V Input 5-bit Programmable: 1.3V to 3.5V 1.075V to 1.850V • High Efficiency • Differential Remote Sense

Contextual Info: PT8000—5V 60 Amp High-Performance Programmable ISR SLTS135A Revised 4/5/2001 Features • • • • 60A Output Current Multi-Phase Topology +5V Input 5-bit Programmable: 1.3V to 3.5V 1.075V to 1.850V • High Efficiency • Differential Remote Sense

PT8000

Abstract: PT8001 PT8002 PT8002A PT8002C PT8002N
Contextual Info: PT8000—5V 60 Amp High-Performance Programmable ISR SLTS135A Revised 4/5/2001 Features • • • • 60A Output Current Multi-Phase Topology +5V Input 5-bit Programmable: 1.3V to 3.5V 1.075V to 1.850V • High Efficiency • Differential Remote Sense

10K SIP for microcontroller

Abstract: PT8000 PT8001 PT8001A PT8001C PT8001N PT8002 PT8002A PT8002C
Contextual Info: PT8000—5V 60 Amp High-Performance Programmable ISR SLTS135A Revised 4/5/2001 Features • • • • 60A Output Current Multi-Phase Topology +5V Input 5-bit Programmable: 1.3V to 3.5V 1.075V to 1.850V • High Efficiency • Differential Remote Sense

PT80

Contextual Info: ispLSI 81080V Features Functional Block Diagram • SuperBIG HIGH DENSITY IN-SYSTEM PROGRAMMABLE LOGIC — 3.3V Power Supply — 60,000 PLD Gates/1080 Macrocells — 192-360 I/O Pins Supporting 3.3V/2.5V I/O — 1440 Registers — High-Speed Global and Big Fast Megablock BFM

4032V

Abstract: DS1017 LC4032V-10TN48I 4512c application LC4256V-75TN176C marking 17Z 4000B AEC-Q100 DS1020 22z2
Contextual Info: ispMACH 4000V/B/C/Z Family 3.3V/2.5V/1.8V In-System Programmable SuperFAST TM High Density PLDs Coolest Power May 2009 C Features Data Sheet DS1020 TM • Broad Device Offering • Multiple temperature range support – Commercial: 0 to 90°C junction Tj

Contextual Info: MF1501-02 IEEE1394 Controller S1R72805 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.